• Journal of Biosystems Engineering
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• v.42 no.4
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• pp.301-313
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• 2017

Purpose: This study was conducted to discriminate between normal hulled barley and Fusarium (Fusarium asiaticum and Fusarium graminearum) infected hulled barley by using the near-infrared spectroscopy (NIRS) technique. Methods: Fusarium asiaticum and Fusarium graminearum were artificially inoculated in hulled barley and the reflectance spectrum of the barley spike was obtained by using a near-infrared spectral sensor with wavelength band in the range 1,175-2,170 nm. After obtaining the spectrum of the specimen, the hulled barley was cultivated in a greenhouse and visually inspected for infections. Results: From a partial least squares discriminant analysis (PLS-DA) prediction model developed from the raw spectrum data of the hulled barley, the discrimination accuracy for the normal and infected hulled barley was 99.82% (563/564) and 100% (672/672), respectively. Conclusions: NIRS is effective as a quick and nondestructive method to detect whether hulled barley has been infected with Fusarium. Further, it expected that NIRS will be able to detect Fusarium infections in other grains as well.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.282-282
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• 2012

본 연구에서 SiOC 박막을 제작하기 위해서 RF 마그네트론 스퍼터링법을 이용하여 유량별 RF 파워의 변화에 따라서 AZO 박막을 성장시켰으며 박막의 광학적 특성을 조사하였고 투명 전도성 박막으로써 AZO 박막을 SiOC 박막 위에 성장시켜서 광학적인 특성을 조사하였다. Si 웨이퍼의 종류에 따라서 광학적인 특성에 조금의 변화가 있는 것을 확인하였으며, n-type Si의 경우 electron transition에 의한 emission 특성이 달라지는 것에 비하여 상대적으로 p-type Si의 경우 변화가 거의 없는 것으로 나타났다. 일반적으로 사용되는 SiO2 산화막 위에 증착한 AZO 박막에 비하여 SiOC 박막 위에 증착할 경우 빛의 흡수가 많이 일어나는 것을 확인할 수 있었으며, AZO/SiOC 박막의 반사도 역시 많이 감소하였으며, 이러한 전기적인 특성은 태양전지에서 전면전극으로 사용할 경우 반사방지막으로서의 특징도 나타낸다는 것을 의미한다. 스퍼터 방법에 의한 증착법은 낮은 온도에서도 공정이 가능하다는 장점이 있으며, 절연특성이 우수한 SiOC 박막을 AZO 박막의 보호막으로 사용할 경우 용도에 따라서 우수한 특성을 나타낼 수 있음을 확인하였다.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.227-232
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• 2013

In this research, fiber-optic pressure sensors were fabricated with rugate-structured porous silicon (RPS) diaphragms coated with PMMA (Polymethyl-Methacrylate). The reflectance spectrum of the PMMA/RPS diaphragm was almost the same as that of uncoated RPS diaphragm. However the mechanical strength of the PMMA/RPS diaphragm increased more than that of the uncoated diaphragm. As a result, the fiber-optic sensor fabricated with PMMA/RPS diaphragm could successfully detect more high pressure difference without diaphragm damage than the highest detectable pressure difference of the sensor with normal RPS diaphragm. The response data of the fiber-optic sensor recorded as a function of pressure difference were fitted by theoretical curves. During this process, elastic moduli of the used PMMA/RPS diaphragms were obtained numerically. The dynamic response properties of the fiber-optic sensor were also investigated under continuous variation of the pressure difference conditions.

• Journal of Industrial Technology
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• v.24 no.B
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• pp.59-64
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• 2004

GaAs thin films were grown epitaxially by MOCVD method on (001) GaAs substrate. And as a surfactant, Bi(bismuth) thin films were deposited on GaAs buffer layer by using TMBi(trimethylbismuth) source. In-situ reflectance difference spectroscopy(RDS) was used to monitor the surface reconstruction of GaAs and Bi thin films. As the results, under the exposure of TBAs(tertiarybuthylarsine) and hydrogen atmosphere, the surface reconstruction of GaAs was changed from As-rich c($4{\times}4$) to As-rich ($2{\times}4$), which was due to the adsoption and desorption of As dimers. The first bismuth surface related RDS signal was reported. At the deposition temperature of $450^{\circ}C$, Bi-terminated GaAs surface showed the RDS spectrum similar to that of Sb-terminated GaAs surface, possibly a ($2{\times}4$) surface. And Bi surface layers were rapidly evaporated with increasing the deposition temperature($550^{\circ}C$), finally becoming As-terminated ($2{\times}4$) surface.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.2
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• pp.54-57
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• 2005

Photoreflectance (PR) has been measured to investigate the characterization of the Si$_{3}$N$_{4}$Al$_{0.21}$ Ga$_{0.79}$As/GaAs and Al$_{0.21}$Ga$_{0.79}$As/GaAs heterostructures. In the PR spectrum, the caplayer thickness was 170 nm and Si$_{3}$N$_{4}$ was utilized as the capping material. The C peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, in the presence of the Si$_{2}$N$_{4}$ cap layer, band gap energy was low shifted. This result indicates that the Si$_{3}$N$_{4}$ cap layer controlled evaporation of the As atom.

• 한국지형공간정보학회:학술대회논문집
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• 2005.08a
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• pp.101-106
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• 2005

Vegetation shows unique spectrum characteristics compared with other materials. If such characteristics are used, land change pattern can be determined. Thus, vegetation has an absorption belt and a reflective belt in visible and near infrared, and reflectance is very high. Then, various methods of monitoring vegetation paying attention to the absorption wavelength region and reflective region of vegetation are proposed. However, there are various problems in grasping change of vegetation by NDVI, PVI, etc. It is very difficult especially to remove various noise ingredients in the received satellite data. Until now, it is difficult to compensate for shadow effect when NDVI is used in vegetation analysis. The results is, if the shadow is about 60% the pixel will be wrongly classified as may be vegetation or not.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.141-144
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• 2002

Computer code was developed to design waveguide gratings based on coupled-mode equations and the transfer matrix formalism. The experimental set-up has been constructed for inscribing Bragg gratings in planar waveguides with a phase mask and uv laser beam, which enables alignment and packaging of grating devices as well as in-situ performance measurements. Bragg grating has been fabricated on silica planar waveguides with 0.75% Germanium concentration and its transmittance spectrum was measured to have 95% reflectance at the peak wavelength. Optical losses as the function of the misalignment were measured and their usage is described.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.794-799
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• 1997

Poly-Si films have been prepared by solid phase crystallization of LPCVD(low-pressure CVD) amorphous silicon. The crystallinity of poly-Si films has been derived from UV reflectance spectrum and lies in the range between 70% and 80% . From XRD measurement the peak at 28.2$^{\circ}$from (111) plane is dominantly detected in the SPC poly-Si films, The average grain size of poly-Si film is determined by the image of SEM and varies from 4000 $\AA$ to 8000$\AA$. The electrical conductivity of as-deposited amorphous silicon film is about 2.5$\times$10$^{-7}$ ($\Omega$.cm)$^{-1}$ , and 3~4$\times$10$^{-6}$ ($\Omega$.cm)$^{-1}$ of room temperature conductivity is the SPC poly-Si films. The conductivity activation energies are 0.5~0.6 eV or the 500$\AA$-thick poly-Si films.

• Journal of Biomedical Engineering Research
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• v.30 no.3
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• pp.263-269
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• 2009

An object's color and intensity are determined by its spectral reflectance and illumination. Therefore, the illumination plays a key role in forming the appearance of the object in a scene. In this paper, we focus on color distinction of objects and derive the optimal illumination conditions to maximize the distance between objects in the RGB color space. As a practical approach the optimal illumination is composed by deriving the optimal linear combinations given a set of LED light sources. The effectiveness of our approach is shown through experimental results using an endoscope system.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.128-132
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• 2013

L-Arginine semi-oxalate (LASO) single crystal has been grown by solution growth technique at room temperature. The crystal structure and lattice parameters were determined for the grown crystal by single crystal X-ray diffraction studies. Photoluminescence studies confirm the violet fluorescence emission peak at 395 nm. Optical constants like band gap, refractive index, reflectance, extinction coefficient and electric susceptibility were determined from UV-VIS-NIR spectrum. The dielectric constant, dielectric loss and ac conductivity of the compound were calculated at different temperatures and frequencies to analyze the electrical properties. The solid state parameters such as plasma energy, Penn gap, Fermi energy and polarizability were calculated to analyze second harmonic generation (SHG). Nonlinear optical property was discussed to confirm the SHG efficiency of the grown crystal.