• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.2A
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• pp.83-94
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• 2012

Various wireless communication devices or network such as WRAN and WLAN will coexist in the TVWS(TV White Space). Because of this coexistence, the wireless devices which use the TVWS have to avoid interfering to not only licensed TV receiver and wireless microphone but also homogeneous or heterogeneous TVBD(TV Band Device)s. In this paper, we propose two frequency sharing methods for the coexistence of WLAN and WRAN in terms of interference reduction and throughput enhancement in both homogeneous and heterogeneous networks. One is the WRAN spectrum etiquette to provide more wide bandwidth for WLAN users and the other is the WLAN frequency selection methods to improve the throughput performance. The simulation results have confirmed the throughput improvement of the proposed methods. Moreover, the proposed methods is also applicable to improve the throughput performance and reduce interference of similar systems working in a cognitive manner.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.263-267
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• 2014

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• Journal of the Earthquake Engineering Society of Korea
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• v.14 no.4
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• pp.37-48
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• 2010

The seismic control effect of reinforced concrete structures with low energy dissipating capacity due to stiffness degradation is investigated through nonlinear time history analysis. The primary structure is idealized as a SDOF system of modified Takeda hysteresis rule and an elasto-perfectly-plastic nonlinear spring is added to represent a hysteretic damping device. Based on statistics of the numerical analysis, equivalent linearization techniques are evaluated, and empirical equations for response prediction are proposed. As a result, estimation of the ductility demand with proposed empirical equations is more desirable than the equivalent linearization techniques. The optimal yield strengths based on empirical equations are significantly different from the optimal yield strength of elasto-perfectly-plastic systems. Also, the results indicate that the reduction effect of the ductility demand is more remarkable for smaller natural periods.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.9
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• pp.1131-1136
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• 2014

Recently, power converters installed on the specialized vessels such as LNG Carrier and Icebreaker and offshore plants mainly use diode rectifier. However, such devices cause distortion of supply voltage waveform by involving much harmonics to input current of non linearity load in rectifying operation. Distortion of supply voltage waveform can be problems such as false operation of generator, transformer and load device and deterioration of power quality. This thesis is focusing with a view to producing accurate sinusoidal AC waveform with certain load through improvement of distortion of current waveform causing under operation of rectifier by using accurate circuit of DC shaping. The result of computer simulation proved that harmonics involved in current and voltage waveform of power system can be reduced.

• Journal of the Korean Society of Radiology
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• v.14 no.3
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• pp.303-311
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• 2020

Scattering-ray generated during plain radiography can cause secondary exposure to organs and tissues other than the target area. Currently, Shielding devices used to reduce radiation exposure are mostly used for radiation protection of workers, and radiation protection of patients is rarely performed. Therefore, this study intends to evaluate the organ dose by scattered-rays and the effectiveness 3D printing materials as a radiation shielding device during plain radiography through simulation. As a result, the absorbed dose for each organ at the time of examination showed a high effect due to the secondary scattering-ray as the distance from the source was close and the organ closer to the skin surface. The dose reduction effect due to the use of 3D printing shielding devices to protect this showed a higher shielding effect in the case of mixed printing materials compared to plastics.

• Journal of Advanced Marine Engineering and Technology
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• v.36 no.4
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• pp.430-436
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• 2012

This study was conducted to measure battery's voltage drop in a compact electric vehicle to get driving performance in various driving situations. In the experiment, to evaluate the energy consumption and milage, system performance have measured with changing of the driving speed and the reduction of driving distance when the heater was operating. The battery of the car in this study is lead type storage battery. The driving velocity was changed from 10km/h to 50 km/h with 20km/h intervals and the operating step of the heating device. As results, the electronic consumption rate was maximum at 35 km/h of vehicle speed and if the driver turning the heater at maximum, capacity will lead to 35% of energy consumption increment.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.32 no.11
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• pp.897-905
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• 2008

Selective catalytic reduction(SCR) is known as one of promising methods for reducing $NO_x$ emissions in diesel exhaust gases. $NO_x$ emissions react with ammonia in the catalyst surface of SCR system at working temperature of catalyst. In this study, to raise the reacting temperature when the exhaust gas temperature is too low, a heater is located at the bottom of SCR reactor. At an ambient temperature, ammonia is radially injected perpendicular to the exhaust gas flow at inlet pipe and uniformly mixed in the mixing area after being impinged against the wall. To predict the turbulent model inside the mixing area of SCR system, the standard ${\kappa}\;-\;{\varepsilon}$ model is applied. This work investigates numerically the effects of induced heat on the gaseous flow. The results show that the Taylor-$G{\ddot{o}}rtler$ type vortex is generated after the gaseous flow impinges the wall in which these vortices influence the temperature distribution. The addition of heat disturbs the flow structure in bottom area and then stretching flow occurs. Vorticity strand is also formed when heat is continuously increased. Constriction process takes place, however, when a further heat input over a critical temperature is increased and finally forms shed vortex which is disconnected from the vorticity strand. The strong vortex restricts the heat transport in the gaseous flow.

• Journal of IKEEE
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• v.24 no.2
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• pp.604-609
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• 2020

We investigated the influence of rapid thermal annealing on aluminum nitride (AlN) thin film Schottky barrier diodes (SBDs) manufactured structures deposited on a 4H-silicon carbide (SiC) wafer using radio frequency sputtering. The Ni/AlN/4H-SiC devices annealed at 400℃ exhibited Schottky barrier diode (SBDs) properties with an on/off current ratio that was approximately 10 times higher than that of the as-deposited device structures and the devices annealed at 600℃ as measured at room temperature. Auger electron spectroscopy (AES) measurements revealed that atomic oxygen concentrations in the annealed AlN devices at 400℃, is ascribed to the improvement in on/off ratio and the reduction of on-resistance. Additionally, we investigated the electrical characteristics of the AlN/SiC SBD structures depending on the frequency variation of sound waves.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.12
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• pp.42-53
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• 2011

As IT industry using networks have been developed explosively, online operations that were conducted in offline are increasing rapidly, and even relationship with other people made online. As online crimes are increasing accordingly, building security networks is getting very important. As a result, network separation between business and organization network has been performed recently, but this causes network user inconvenience and efficiency reduction. In this paper, we propose reassociation methods for already separated networks for many public organizations. We implement two reassociation methods using NAT device and shared storage and show their experimental results.