• Title/Summary/Keyword: Red Phosphor

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Synthesis of K2TiF6:Mn4+ Red Phosphors by a Simple Method and Their Photoluminescence Properties (Mn4+ 이온 활성 K2TiF6 불화물 적색형광체의 합성과 발광특성)

  • Kim, Yeon;Wu, Mihye;Choi, Sungho;Shim, Kwang Bo;Jung, Ha-Kyun
    • Korean Journal of Materials Research
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    • v.26 no.9
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    • pp.504-511
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    • 2016
  • To prepare $Mn^{4+}$-activated $K_2TiF_6$ phosphor, a precipitation method without using hydrofluoric acid (HF) was designed. In the synthetic reaction, to prevent the decomposition of $K_2MnF_6$, which is used as a source of $Mn^{4+}$ activator, $NH_5F_2$ solution was adopted in place of the HF solution. Single phase $K_2TiF_6$:$Mn^{4+}$ phosphors were successfully synthesized through the designed reaction at room temperature. To acquire high luminance of the phosphor, the reaction conditions such as the type and concentration of the reactants were optimized. Also, the optimum content of $Mn^{4+}$ activator was evaluator based on the emission intensity. Photoluminescence properties such as excitation and emission spectrum, decay curve, and temperature dependence of PL intensity were investigated. In order to examine the applicability of this material to a white LED, the electroluminescence property of a pc-WLED fabricated by combining the $K_2TiF_6$:$Mn^{4+}$ phosphor with a 450 nm blue-LED chip was measured.

Photoluminescent properties of red phosphor (Y,Gd)$_2$O$_3$: Eu for plasma display panel synthesized by homogeneous precipitation method (균일침전법으로 제조한 플라즈마 디스플레이용 적색 형광체 (Y,Gd)$_2$O$_3$: Eu의 발광특성)

  • 김유혁;김좌연
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.6
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    • pp.400-406
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    • 2000
  • The fired Precursor (Y,Gd,Eu)(OH)$CO_3$.$H_2O$$900^{\circ}C$ was used to synthesize the red phosphor $(Y,Gd)_2O_3$: Eu for plasma display panel. Rounded and ~l $\mu\textrm{m}$ diameter phosphor $(Y,Gd)_2O_3$: Eu can be obtained by the reaction of aformentioned powder with a small amount addition of flux at $1350^{\circ}C$ for 2 hours. Emission spectra of these phosphors were measured under excitation wavelength at 254 nm and 147 nm and the optimum concentrations of activator ion were determined at around 15 mo1e % and 10 mole % under these conditions, respectively. $BaCO_3$flux had the best property in emission intensity among the prepared $BaCO_3AlF_3$and $Li_3PO_4$phosphors. The properties of optimized sample were improved in terms of relative luminance and color coordinate comparing with commercial phosphor such as $Y_2O_3$: Eu.

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Photoluminescence Enhancement of Y2O3:Eu3+ Red Phosphor Prepared by Spray Pyrolysis using Aliovalent Cation Substitution and Organic Additives (이가 양이온 금속 친환 및 유기 첨가제를 이용하여 분무열분해법으로 제조된 Y2O3:Eu3+ 적색 형광체의 휘도 개선)

  • Min, Byeong Ho;Jung, Kyeong Youl
    • Journal of Powder Materials
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    • v.27 no.2
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    • pp.146-153
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    • 2020
  • The co-doping effect of aliovalent metal ions such as Mg2+, Ca2+, Sr2+, Ba2+, and Zn2+ on the photoluminescence of the Y2O3:Eu3+ red phosphor, prepared by spray pyrolysis, is analyzed. Mg2+ metal doping is found to be helpful for enhancing the luminescence of Y2O3:Eu3+. When comparing the luminescence intensity at the optimum doping level of each Mg2+ ion, the emission enhancement shows the order of Zn2+ ≈ Ba2+ > Ca2+ > Sr3+ > Mg2+. The highest emission occurs when doping approximately 1.3% Zn2+, which is approximately 127% of the luminescence intensity of pure Y2O3:Eu3+. The highest emission was about 127% of the luminescence intensity of pure Y2O3:Eu3+ when doping about 1.3% Zn2+. It is determined that the reason (Y, M)2O3:Eu3+ has improved luminescence compared to that of Y2O3:Eu3+ is because the crystallinity of the matrix is improved and the non-luminous defects are reduced, even though local lattice strain is formed by the doping of aliovalent metal. Further improvement of the luminescence is achieved while reducing the particle size by using Li2CO3 as a flux with organic additives.

Photoluminescence Characteristic of Gallate-Based Red Emitting Phosphors with High Color Purity (색순도가 우수한 갈륨 산화물계 적색 형광체의 광발광 특성)

  • Kim, Kyoung-Un;Choi, Sung-Ho;Jung, Ha-Kyun;Nahm, Sahn
    • Korean Journal of Materials Research
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    • v.18 no.3
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    • pp.159-162
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    • 2008
  • $Eu^{3+}$-activated $R_3GaO_6$ (R = Y, Gd) phosphors were prepared in a conventional solid-state reaction and their optical properties were investigated. These compounds exhibit strong red emission under light excitation at 254 nm. The emission spectra are dominated by peaks appearing around 610-630 nm that are induced by the electric dipole transition of $^5D_0\;{\rightarrow}\;^7F_2$ of $Eu^{3+}$. In addition, the appropriate CIE (Commission Internationale de l'clairage) chromaticity coordinates, (x = 0.656, y = 0.336) for $Y_3GaO_6$ and (x = 0.655, y = 0.334) for $Gd_3GaO_6$, become closer to the NTSC (National Television System Committee) standard values. With the optimized activator concentrations, the maximum emission brightness is approximately 80% of $Y_2O_3$:$Eu^{3+}$ typical red-emitting phosphor with improved color purity under an excitation condition of 254 nm.

Properties of MgMoO4:Eu3+ Phosphor Thin Films Grown by Radio-frequency Magnetron Sputtering Subjected to Thermal Annealing Temperature (열처리 온도 변화에 따른 라디오파 마그네트론 스퍼터링으로 성장된 MgMoO4:Eu3+ 형광체 박막의 특성)

  • Cho, Shinho
    • Current Photovoltaic Research
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    • v.4 no.1
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    • pp.25-29
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    • 2016
  • $Eu^{3+}$-activated $MgMoO_4$ phosphor thin films were grown at $400^{\circ}C$ on quartz substrates by radio-frequency magnetron sputter deposition from a 15 mol% Eu-doped $MgMoO_4$ target. After the deposition, the phosphor thin films were annealed at several temperatures for 30 min in air. The influence of thermal annealing temperature on the structural and optical properties of $MgMoO_4:Eu^{3+}$ phosphor thin films was investigated by using X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectrophotometry. The transmittance, optical band gap, and intensities of the luminescence and excitation spectra of the thin films were found to depend on the thermal annealing temperature. The XRD patterns indicated that all the thin films had a monoclinic structure with a main (220) diffraction peak. The highest average transmittance of 91.3% in the wavelength range of 320~1100 nm was obtained for the phosphor thin film annealed at $800^{\circ}C$. At this annealing temperature the optical band gap energy was estimated as 4.83 eV. The emission and excitation spectra exhibited that the $MgMoO_4:Eu^{3+}$ phosphor thin films could be effectively excited by near ultraviolet (281 nm) light, and emitted the dominant 614 nm red light. The results show that increasing RTA temperature can enhance $Eu^{3+}$ emission and excitation intensity.

Effect of Deposition Temperature on the Optical Properties of La2MoO6:Dy3+,Eu3+ Phosphor Thin Films (증착 온도에 따른 La2MoO6:Dy3+,Eu3+ 형광체 박막의 광학 특성)

  • Cho, Shinho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.5
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    • pp.387-392
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    • 2019
  • $Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

Nanocrystalline $Y_3Al_5O_{12}$:Ce Phosphor-Based White Light-Emitting Diodes Embedded with CdS:Mn/ZnS Core/Shell Quantum Dots

  • Kim, Jong-Uk;Lee, Dong-Kyoon;Lee, Jong-Jin;Yang, Hee-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.588-590
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    • 2008
  • Yellow-emitting $Y_3Al_5O_{12}$:Ce nanocrystalline phosphor and orange-emitting CdS:Mn/ZnS core/shell quantum dots were prepared by a modified polyol and a reverse micelle chemistry, respectively. To compensate a poor color rendering index of YAG:Ce nanocrystalline phosphor due to the lack of red spectral component, CdS:Mn/ZnS quantum dots were blended into YAG:Ce. Based on spectral evolutions in the blended systems, hybrid white light emitting diodes are fabricated and characterized.

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Preparation and Photoluminescence Properties of $Ba_{1-x}M_xGa_2S_4:Eu^{2+}$ (M = Ca, Sr) Phosphor

  • Yoo, Hyoung-Sun;Kim, Sung-Wook;Han, Ji-Yeon;Park, Bong-Je;Jeon, Duk-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.561-564
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    • 2008
  • $Ba_{1-x}M_xGa_2S_4:Eu^{2+}$ (M = Ca, Sr) phosphor was prepared for white light emitting diodes application. Photoluminescence (PL) emission and excitation bands were red-shifted with increase of Ca and Sr content due to the crystal field effect. Moreover, the PL intensity under 450 nm was increased by substitution of Ca and Sr.

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Search for new phosphors for flat panel displays and lightings using combinatorial chemistry and computational optimization

  • Sohn, Kee-Sun;Jung, Yu-Sun;Cho, Sang-Ho;Kulshreshtha, Chandramouli
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.33-38
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    • 2006
  • An evolutionary optimization process involving genetic algorithm and combinatorial chemistry was employed in an attempt to develop titanate-based red phosphors suitable for tri-color white light emitting diodes We screened a eight-cation oxide system including $(K,Li,Na)_x(Y,Gd,La,Eu)_yTi_zO_{\delta}$ in terms of luminescent efficiency. The combination of genetic algorithm and combinatorial chemistry was proven to enhance the searching efficiency when applied for phosphor screening. As a result, the composition was optimized to be $(Na_{0.92}Li_{0.08})(Y_{0.8}Gd_{0.2})TiO_4:Eu^{3+}$, The luminance of this phosphor was 110 % of that of well-known scheelite variant phosphor at an excitation of 400 nm.

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Synthesis of $M(WO_4)$:Eu (M : Group 1 or 2) for LED and its Luminescent Properties

  • Park, Seung-Hyok;Kim, Chang-Hae;Park, Hee-Dong;Kim, You-Hyuk
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.838-841
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    • 2002
  • $M(WO_4)$:Eu phosphor as a red emitting phosphor for LED was prepared by solid state method. Tungstate phosphors were exited at long wavelength ultra violet region. In special, the emission of Eu-doped $M(WO_4)$:Eu phosphor under the excitation of 410nm appeared at 613nm. $M(WO_4)$:Eu phosphors with M : Group 1 had a higher excitation intensity than those of the phosphors with M: Group 2 at long-wavelength UV.

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