• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.579-581
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• 2004

A new DCM derivative containing the phenoxazine moiety (DCPXZ) has been synthesized for use as a red fluorescent dye molecule in organic light-emitting diodes (OLEDs). The photoluminescence and electroluminescence properties of DCPXZ were examined. The maximum photoluminescence of DCPXZ in chloroform solution ($10^{-5}$ mol) was observed at 616 nm. EL devices were fabricated with the structure ITO/PEDOT-PSS/Cu-PC(15nm)/${\alpha}$-NPD(45nm)/$Alq_3$:DCPXZ(30nm)/$Alq_3$(30nm)/LiF(0.5nm)/Al. The maximum EL emission for the 2.0% DCPXZ-doped device was at 608 nm with CIE coordinates (0.57, 0.42). The EL device exhibited a maximum brightness of 15,000 cd/$m^2$ at 19.4 V and a power efficiency of 1.04 lm/W at a luminance of 100 cd/$m^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1075-1078
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• 2006

New iridium complex was synthesized and demonstrated a deep red light emission in organic light-emitting diodes (OLEDs). The maximum luminance of 8320 cd/m2 at 15 V and the luminance efficiency of 2.5 cd/A at 20 mA/cm2 were achieved. The peak wavelength of the electroluminescence was at 626 nm with the CIE coordinates of (0.69, 0.30), and the device also showed a stable color chromaticity with various voltages.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.415-417
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• 2009

Color stable and efficient two wavelength white organic light emitting diodes (OLEDs) were fabricated using a iridium(III)[bis(4,6-difluorophenyl)-pyridinato-N,$C^2$'] picolinate (FIrpic) as a blue phosphorescent emitter and a bis(1-phenylisoquinolinato-$C^2$,N)iridium (acetylacetonate) ((piq)$_2$Ir(acac)) as a red phosphorescent emitter. The emitting layers consist of two blue emitting layers and one red emitting layer which is between the two blue layers. The device reaches the peak efficiencies of 7.84 % and 10.3 cd/A at 0.6 mA/$cm^2$. Furthermore, there was little change of EL spectra according to current density change in the device.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.762-766
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• 2009

We have synthesized and demonstrated a red emission in Organic Light Emitting Diodes (OLEDs) using phosphorescent iridium(III) complexes based on the 2-phenylpyridine ligands with electron-withdrawing carbonyl groups. Among those, a device exhibited highly efficient red-orange emission with the luminance of 20460 cd/$m^2$ at 12 V, the luminous efficiency of 22.0 cd/A at 20 mA/$cm^2$, and the $CIE_{x,y}$ coordinates of (x=0.560, y=0.439 ) at 10 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.696-700
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• 2010

We fabricated red and blue organic light emitting display (OLEDs) which had the two kinds of multi-structure of ITO/HIL/HTL/EML/ETL/LiF/Al and ITO/HIL/HTL/EML/ETL/LiF/Al/LiF. In the case of red OLED that had LiF/Al/LiF structure compared to LiF/Al structure, the current density increased from 4.3 mA/$cm^2$ to 7.3 mA/$cm^2$, and the brightness increased from 488 cd/$m^2$ to 1,023 cd/$m^2$ at 7.0 V, and as a result the current efficiency was improved from 11.28 cd/A to 13.95 cd/A. Also in the case of blue OLED that had LiF on Al cathode layer, the current density increased from 1.2 mA/$cm^2$ to 1.8 mA/$cm^2$, and the brightness increased from 45 cd/$m^2$ to 85 cd/$m^2$ at 7.0 V, and as a result the current efficiency was improved from 3.69 cd/A to 4.82 cd/A. Through these experimental results it could be suggested that the LiF layer formed on Al prevents the oxidation of Al surface, and the electrode resistance become low with increase of supplied electrons, therefore the brightness and the efficiency are improved from the influence to the well-balanced bonding of electron and hole at emitting layer.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1747-1749
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• 1999

Organic electroluminescent devices (OLEDs) have received a great deal of attention due to their potential application as full-color displays. Europium complexes are known as excellent red color-emitting materials for OLEDs since they show intense photoluminescence at around 610 nm with a sharp spectral bandwidth. In this study, triple-layer and multiple quantum-well structures consisting of Eu$(TTA)_3$(bpy) complex well layer sandwiched triphenyldiamine derivative (TPD) layers were fabricated and their photoluminescent characteristics were investigated. Sharp emission at the wavelength of 615 nm has been observed from the triple-layer and multiple quantum-well structures containing Eu complex. Details on the electrical properties of these structures will be also discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.43-46
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• 2004

We demonstrated efficient white light emitting OLEDs with a single emissive layer structure, which was blue-emitting 1,4-bis[2,2-diphenylvinyl]biphenyl (DPVBi) doped with blue luminescent amino-substituted distyrylarylene amine (DSA-amine) and red luminescent [2,6-bis[2-[5-(dibutylamino) phenyl]vinyl]-4H -pyran-4-ylidene]propanedinitrile (DADB). Through the optimization of the device structure, the white light emission with full visible spectral range was obtained. Its CIE color coordinates was (0.32,0.42) at 10 $mA/cm^2$ and the external quantum efficiency, the luminance efficiency and the luminance yield were 3.7 %, 3.3 lm/W and 9.0 cd/A, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.905-910
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• 2011

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which LiF and Al were deposited as inorganic protective films. And then the OLED was attached to flat glass by printing method using epoxy. In case of direct coating of epoxy onto OLED by printing method, luminance and current efficiency were remarkably decreased because of the damage to the OLED by epoxy. In case of depositing LiF and Al as inorganic protective films and then coating of epoxy onto OLED, luminance and current efficiency were not changed. OLED lifetime was more increased through inorganic protective films between OLED and flat glass than that without any encapsulation (8.8 h), i.e., 47 (LiF/Al/epoxy/glass), 62 (LiF/Al/LiF/epoxy/glass), and 84 h (LiF/Al/Al/epoxy/glass). The characteristics of OLED encapsulated with inorganic protective films (attached to flat glass) showed the possibility of application of protective films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.45-49
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• 2014

We have fabricated white organic light-emitting diodes (OLEDs) using several thicknesses of electron-transport layer. The multi-emission layer structure doped with red and blue phosphorescent guest emitters was used for achieving white emission. 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was used as an electron-transport layer. The thickness of BCP layer was varied to be 20, 55, and 120 nm. The current efficiency, emission and recombination characteristics of multi-layer white OLEDs were investigated. The BCP layer thickness variation results in the shift of emission spectrum due to the recombination zone shift. As the BCP layer thickness increases, the recombination zone shifts toward the electron-transport layer/emission-layer interface. The white OLED with a 55 nm thick BCP layer exhibited a maximum current efficiency of 40.9 cd/A.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.239-244
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• 2007

Highly efficient and stable white PIN OLED structures have been developed with a focus on possible AM display applications. Due to the use of the novel air-stable Novaled n-dopant material NDN26, the mass production compatibility of the PIN approach is improved. With both a conventional n-dopant, NDN1, and a novel air-stable n-dopant, NDN26, similar performance in efficiency and lifetime are reached. Based on highly a stable red fluorescent emitter system, the Novaled PIN approach allows for reaching ultra-long lifetimes of 1,000,000 hours at a brightness of $1,000\;cd/m^2$, both for top and for bottom emission layouts. Furthermore, inverted PIN structures for a possible use in a-Si backplane applications for AM displays are shown. With a phosphorescent green emitter system it could be demonstrated that for bottom and inverted as well as non-inverted top emission, a brightness of $1,000\;cd/m^2$ can be reached at below 3 V. In addition to low operating voltages and long lifetimes, PIN OLEDs also enable for device structures with extremely low operating voltage drifts, a feature of increasing importance for future AM display developments.