• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.11
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• pp.3137-3143
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• 2009

In this paper, a single arm spiral antenna has been investigated about the characteristics of polarization and tilt beam. If a circumference length of spiral is bigger than a wavelength, it have a characteristic of varying maximum radiation beam direction. In addition, circular polarizations (RHCP, LHCP) can be variable by the feeding points (inner, outer). Also maximum beam directions tilt in different direction according to the circular polarizations, LHCP and RHCP. These characteristics of single arm spiral antenna are able to apply in the beam forming, diversity, MIMO application which has dual polarization using an antenna element.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.595-598
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• 2006

In this letter, a compact rectangular spiral antenna is proposed. Instead of a center excitation of conventional spiral antennas, the proposed antenna is adopted a modified feed network, feeding at the end of the spiral. The matching circuit of $'{\sqsupset}'$ shape is added at the feeding point. With this matching circuit, we can easily match the input impedance well, without the limit of the space. The parameter which determines the circular wave characteristic is explained, and the design guideline of the proposed antenna is presented. We design a proposed antenna operating at 9.5 GHz. Its size is only $0.6\lambda_g\times0.6\lambda_g$. The simulated bandwidth of the input impedance $(S11\leq-10)$ is 8.12% and that of $(AR\leq-3)$ is 4.62%, which is excellent characteristics as compared to its simple structure.

• ETRI Journal
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• v.25 no.2
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• pp.65-72
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• 2003

To achieve cost and size reductions, we developed a low cost manufacturing technology for RF substrates and a high performance passive process technology for RF integrated passive devices (IPDs). The fabricated substrate is a conventional 6" Si wafer with a 25${\mu}m$ thick $SiO_2$ surface. This substrate showed a very good insertion loss of 0.03 dB/mm at 4 GHz, including the conductive metal loss, with a 50 ${\Omega}$ coplanar transmission line (W=50${\mu}m$, G=20${\mu}m$). Using benzo cyclo butene (BCB) interlayers and a 10 ${\mu}m$ Cu plating process, we made high Q rectangular and circular spiral inductors on Si that had record maximum quality factors of more than 100. The fabricated inductor library showed a maximum quality factor range of 30-120, depending on geometrical parameters and inductance values of 0.35-35 nH. We also fabricated small RF IPDs on a thick oxide Si substrate for use in handheld phone applications, such as antenna switch modules or front end modules, and high-speed wireless LAN applications. The chip sizes of the wafer-level-packaged RF IPDs and wire-bondable RF IPDs were 1.0-1.5$mm^2$ and 0.8-1.0$mm^2$, respectively. They showed very good insertion loss and RF performances. These substrate and passive process technologies will be widely utilized in hand-held RF modules and systems requiring low cost solutions and strict volumetric efficiencies.