Mixed-mode simulation of transient characteristics of 4H-SiC DMOSFETs - Impact off the interface changes (Mixde-mode simulation을 이용한 4H-SiC DMOSFETs의 계면상태에서 포획된 전하에 따른 transient 특성 분석)
-
- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
- /
- 2009.11a
- /
- pp.55-55
- /
- 2009