• Korean Chemical Engineering Research
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• 제60권2호
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• pp.313-319
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• 2022

HfO₂을 게이트 산화막으로 갖는 AlGaN/GaN 기반 고이동도 전계효과 트랜지스터(high electron mobility transistor, HEMT)의 노멀리 오프(normally-off) 작동 구현을 위하여 게이트 리세스(gate-recess) 깊이에 따른 소자 특성이 시뮬레이션을 통하여 분석되었다. 전통적인 HEMT 구조, 3 nm의 두께를 갖는 게이트 리세스된 HEMT 구조, 게이트 영역에 AlGaN 층을 갖지 않는 HEMT 구조가 모사되었다. 전통적인 HEMT 구조는 노멀리 온(normally-on) 특성을 나타내었으며, 0 V의 게이트 전압 및 15 V의 드레인 전압 환경에서 0.35 A의 드레인 전류 특성을 나타내었다. 3 nm의 두께를 갖는 게이트 리세스된 HEMT 구조는 2DEG(2-dimensional electron gas) 채널의 전자 농도 감소로 인해, 같은 전압 인가 조건에서 0.15 A의 드레인 전류 값을 보였다. 게이트 영역에 AlGaN 층을 갖지 않는 HEMT 구조는 뚜렷한 노멀리 오프 동작을 나타내었으며, 0 V의 동작전압 값을 확인할 수 있었다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.362-367
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• 2003

It is shown that the effect of variable parameters on flame structures and NOx emissions in the laminar partially premixed methane-air flames with a co-axial Bunsen burner. Objectives of this paper is to understand the effects of flow variables on NOx emissions and the flame structure with OH chemiluminescence, including reconstructed image by abel inversion processing at each conditions. A fuel flowrate of 200 [cc/min] was fixed and the amount of air was varied from 400 to 1200 [cc/min]. The experimental variables were equivalence ratio(${\Phi}$ fuel split percentage(${\sigma}$ and inner tube recess(x/D). Flow conditions were ranged from $1.36{\sim}4.76$(equivalence ratio), $50{\sim}100$(fuel split percentage) and $0{\sim}20$(inner tube recess). NOx analyzer and ICCD camera with a OH filter were used as a main experimental apparatus. In addition, Abel inversion, which is a kind of tomography and valuable to estimate a two-dimensional structure of co-axial flames from cubical information, was employed for combustion diagnostics. Results from this study indicate that the main effects depend on equivalence ratio and next sigma, x/D for NOx production and OH formation. Throughout Abel inversion, we could affirm the maximum position and the tendency of OH radical intensity by variants at five axial heights above the burner exit.

• Journal of Welding and Joining
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• 제14권5호
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• pp.87-94
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• 1996

It has been well known in GMA welding process that wire feeding speed (WFS) or deposition rate increases linealy with the increase of wire extension. In this investigation, however, such an well-known relationship was .reconsidered in terms of contact-tube to work distance (CTWD) instead of wire extension. To verify the proposed relationship between WFS and CTWD, bead-on-plate welding was performed with various CTWDs in the range of 15∼35mm under the condition of near-constant voltage and current As expected, the test results showed an excellent linear relation between WFS and CTWD. Furthermore, the value of the slope turned out to be quite similar to those of previous investigators obtained either theoretically or experimentally through the Precise measurement of electrode extension. Present result also demonstred that the increase of CTWD could be very practical measure for increaring deposition rate without any increase of heat input Depending on the tip recess the practical maximum of CTWD was appeared to be limited somewhere in 25∼30mm mainly due to the entrappment of porocity.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2000년도 추계종합학술대회
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• pp.642-646
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• 2000

The use of neural-fuzzy system to model mesh seam welding is described in this paper. Conventional, automated process generally involves sophisticated sensing and control techniques applied to various processing parameters. Welding parameters affecting quality include the arc voltage, the welding current torch travel speed and the pressure and so on. The relationship between the welding parameters and weld quality is not a direct one, md' in addition, the effect of the weld parameter variables are not independent of the each other. The effectiveness of the proposed neuro-fuzzy algorithms is demonstrated by computer simulations.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2012년도 제45회 KOSCO SYMPOSIUM 초록집
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• pp.33-35
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• 2012

This study has been mainly motivated to numerically model the supercritical mixing and combustion processes encountered in the liquid propellant rocket engines. In the present approach, turbulence is represented by the extended k-e model. To account for the real fluid effects, the propellant mixture properties are calculated by using generalized cubic equation of state. In order to realistically represent the turbulence-chemistry interaction in the turbulent nonpremixed flames, the flamelet approach based on the real fluid flamelet library has been adopted. Based on numerical results, the detailed discussions are made for the effects of swirl number on flame structure of supercritical kerosene/LOx double swirl coaxial injector.

• 한국항해학회지
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• 제23권4호
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• pp.105-114
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• 1999

Generally, though we use the vision sensor or arc sensor in welding process, it is difficult to define the welding parameters which can be applied to the weld quality control. Especially, the important Parameters is Arc Voltage, Welding Current, Welding Speed in arc welding process and they affect the decision of weld bead shape, the stability of welding process and the decision of weld quality. Therefore, it is difficult to determine the unique relationship between the weld bead geometry and the combination of various welding condition. Due to the various difficulties as mentioned, we intend to use Fuzzy Logic and Neural Network to solve these problems. Therefore, the combination of Fuzzy Logic and Neural network has an effect on removing the weld defects, improving the weld quality and turning the desired weld bead shape. Finally, this system can be used under what kind of welding recess adequately and help us make an estimate of the weld bead shape and remove the weld defects.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2004년도 제23회 추계학술대회 논문집
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• pp.288-291
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• 2004

본 논문은 고압조건에서 동축 와류형 분사기의 분무특성 파악을 위한 연구로서 3종류의 분사기가 사용되었으며, 함몰길이와 연료 분사기의 형태에 따른 분무특성을 확인하였다. 또한, 실제 연소기에 서 발생되는 연소압력과 수류 실험에서의 압력 상사조건을 계산하여 실험을 수행하여 분사압에 따른 유량변화, 분무각, 질량분포, 평균 액적크기 등의 분무특성이 측정되었다.

• 전자통신동향분석
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• 제38권6호
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• pp.52-61
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• 2023

With semiconductor scaling approaching the physical limits, devices including CMOS (complementary metal-oxide-semiconductor) components have managed to overcome yet are currently struggling with several technical issues like short-channel effects. Evolving from the process node of 22 nm with FinFET (fin field effect transistor), state-of-the-art semiconductor technology has reached the 3 nm node with the GAA-FET (gate-all-around FET), which appropriately addresses the main issues of power, performance, and cost. Technical problems remain regarding the foundry of GAA-FET, and next-generation devices called post-GAA transistors have not yet been devised, except for the CFET (complementary FET). We introduce a CFET that spatially stacks p- and n-channel FETs on the same footprint and describe its structure and fabrication. Technical details like stacking of nanosheets, special spacers, hetero-epitaxy, and selective recess are more thoroughly reviewed than in similar articles on CFET fabrication.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2009년도 제33회 추계학술대회논문집
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• pp.82-85
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• 2009

우주발사체용 액체추진기관 개발에 있어서, 분사기는 연소성능과 안정성을 결정짓는 매우 중요한 요소로써 이에 대한 분무특성 이해는 필수적으로 이루어져야 한다. 본 연구에서 알아보고자 하는 분사기는 중앙에서 기체산화제를 제트로 분사하고 외부에서 액체연료를 와류(스월)형으로 분사하는 형태이다. 분무형상은 리세스별로 CCD 카메라를 이용한 직접사진기법을 통해 측정하였다. 실제 연소조건과의 모사를 위해 기체질소와 물을 사용하였고, 운동량비를 주요 상사인자로 두어 대기압 수류 시험조건을 도출하여 분무특성을 알아보았다. 또한 기체-액체 운동량비의 영향을 알아보기 위한 연구가 추가적으로 이루어졌다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.