• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.98-98
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.85.3-85
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• 1998

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.266-270
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• 2010

The effect of an Ar plasma treatment on polycarbonate substrates was investigated using $TiO_2$ coatings produced by reactive ion-beam assisted sputtering. The typical pressure used during sputtering was about $10^{-4}$ Torr. After the Ar plasma treatment, the contact angle of a water droplet was reduced from $88^{\circ}$ to $52^{\circ}$ and then further decreased to $12^{\circ}$ with the addition of oxygen into the chamber. The surface of the polycarbonate substrate hanged from hydrophobic to hydrophilic with these treatments and revealed its changing nano-scale roughness. The $TiO_2$ films on the treated surface showed various colors and periodic ordering dependant on the film thickness due to optical interference.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.328-329
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• 2005

Inorganic alignment layer (IAL) was deposited on an indium-tin-oxide (ITO) by using reactive sputtering deposition method. After deposited, IAL was irradiated by $Ar^+$ ion beam (IB) for liquid crystal (LC) alignment. IAL treated by various conditions such as IB energy, IB incident angle, and IB irradiation time had excellent alignment property and electro-optical property the same as that of PI. We investigated into the stability of ion beam treated IAL after a lapse of long time. However IAL irradiated IB did not occur degradation of electro-optical property. The results implied that IAL irradiated IB was adopted as LC alignment layer instead of rubbed polyimide.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.77-81
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• 2011

Aluminum nitride (AlN) thin films were prepared by using nitrogen ion beam assisted reactive radio frequency (RF) magnetron sputtering on the glass substrates without intentional substrate heating. After deposition, the effect of nitrogen ion beam energy on the structural and optical properties of AlN films were investigated by x-ray diffraction (XRD), atomic force microscope (AFM) and UV-Vis. spectrophotometer, respectively. AlN films deposited with $N^+$ ion irradiation at 100 eV show the higher (002) peak intensity in XRD pattern than other films. It means that $N^+$ ion energy of 100 eV is the favorable condition for low temperature crystallization. AFM images also show that surface average roughness is increased from 1.5 to 9.6 nm with $N^+$ ion energy in this study. In an optical observation, AlN films which deposited by $N^+$ ion beam energy of 100 eV show the higher transmittance than that of the films prepared with the other $N^+$ ion beam conditions.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.191-196
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• 2001

GaN is a key material for blue and ultraviolet optoelectronics. Postannealing process was employed to investigate the structural change and the effect on electrical property of the GaN thin film grown on reactive ion beam(RIB) treated sapphire (0001) substrate. Full width half maximum (FWHM) of double crystal x-ray diffraction (DCXRD) spectra and Hall mobility of the specimen were significantly changed depending on the postannealing time at $1000^{\circ}C$ in N2 atmosphere. FWHM of DCXRD reduced upto about 50arc-sec and the mobility increased about $80\textrm{cm}^2$/V.sec. The postannealed specimen with the best mobility was compared with sample without annealing by TEM. The former sample showed a decrease in the lattice strain and reduction of dislocation density by about 56~59%. This implies that there is a strong correlation between crystalline quality and the electrical property of the film. The Present results clearly show that the combination of RIB pretreatment and proper post annealing conditions results in the improved properties of GaN films grown by MOCVD.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.358-358
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• 2010

Ion beam bombardment at low energy forms nanosize patterns such as ripples, dots or wrinkles on the surface of polymers in ambient temperature and pressure. It has been known that the ion beam can alter the polymer surface that induces skins stiffer or the density higher by higher compressive stress or strain energies associated with chain scissions and crosslinks of the polymer. Atomic scale structure evolution in polymers is essential to understand a stress generation mechanism during the ion beam bombardment, which governs the nanoscale surface structure evolution. In this work, Molecular Dynamics (MD) simulations are employed to characterize the phenomenon occurred in bombardment between the ion beam and polymers that forms nanosize patterns. We investigate the structure evolution of Low Density Polyethylene (LDPE) at 300 K as the polymer is bombarded with Argon ions having various kinetic energies ranging from 100 eV to 1 KeV with 50 eV intervals having the fluence of $1.45\;{\times}\;1014 #/cm2$. These simulations use the Reactive Force Field (ReaxFF), which can mimic chemical covalent bonds and includes van der Waals potentials for describing the intermolecular interactions. The results show the details of the structural evolution of LDPE by the low energy Ar ion bombardment. Analyses through kinetic and potential energy, number of crosslinks and chain scissions, level of local densification and motions of atoms support that the residual strain energies on the surface is strongly associated with the number of crosslinks or scissored chains. Also, we could find an optimal Ar ion beam energy to make crosslinks well.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.483-483
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• 2012

Recently, nonthermal bioplasma has been attracted by researchers due to their potentials to modulate cellular functions resulting in changes of biomolecular electron band structures as well as cell morphologies. We have investigated the secondary electron emission characteristics from the surface of the erythrocyte, i.e., red blood cell (RBC) with and without the nonthermal bioplasma treatment in morphological and biomolecular aspects. The morphologies have been controlled by osmotic pressure and biomolecular structures were changed by well known reactive oxygen species. Ion-induced secondary electron emission coefficient have been measured by using gamma-focused ion beam (${\gamma}$-FIB) system, based on the quantum mechanical Auger neutralization theory. Our result suggests that the nonthermal bioplasma treatment on biological cells could result in change of the secondary electron emission coefficient characterizing the biomolecular valence band electron energy structures caused by the cell morphologies as well as its surface charge distributions.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.170-170
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• 1996

• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.27-27
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• 1997