• Resources Recycling
• /
• v.19 no.5
• /
• pp.31-43
• /
• 2010

To fabricate porous SiC candle filter for filtration facility of the IGCC system, the candle type filter preforms were fabricated by ramming and vacuum extrusion process. A commercially available ${\alpha}$-SiC powders with various particle size were used as starting raw materials, and $44\;{\mu}m$ mullite, $CaCO_3$ powder were used as non-clay based inorganic sintering additive. The candle typed preforms by ramming process and vacuum extrusion were sintered at $1400^{\circ}C$ for 2h in air atmosphere. The effect of forming method and particle size of filter matrix on porosity, density, strength (flexural and compressive strength) and microstructure of the sintered porous SiC candle tilters were investigated. The sintered porous SiC filters which were fabricated by ramming process have more higher density and strength than extruded filter in same particle size of the matrix, and its maximum density and 3-point bending strength were $2.00\;g/cm^3$ and 45 MPa, respectively. Also, corrosion test of the sintered candle filter specimens by different forming method was performed at $600^{\circ}C$ for 2400h using IGCC syngas atmosphere for estimation of long-term reliability of the candle filter matrix.

• Journal of the Korean Ceramic Society
• /
• v.36 no.2
• /
• pp.193-202
• /
• 1999

Al powder, AlN powder, SiC whisker and sintering aids were wet-mixed, and then the specimens prepared with mixed powder were reacted by nitridation at 600∼1400$^{\circ}C$ for 5 hrs. It was cleat that the higher nitridation and the more SiC whisker content were, the better bending strength was. The specimen of Al50/AlN50 reacted at 1400$^{\circ}C$ for 5hrs had the nitridation percent of 97%, the shrinkage under 2%, and the relative density of 78%. And the maximum bending strength of reaction-bonded specimen was 250 MPa. The specimens completely nitrided were post-sintered at 1700, 1800 and 1900$^{\circ}C$ for 2hrs. The post-sintered body had the shrinkage under 6% and the relative density of 86%. Because of the formation of solid solution between AlN and SiC whisker over 1800$^{\circ}C$, the promotion of mechanical properties according to SiC whisker addition was not observed. The post-sintered body had the maximum bending strength of 195 MPa.

• Journal of the Korean Ceramic Society
• /
• v.35 no.9
• /
• pp.923-932
• /
• 1998

Al2O3/Al composites were produced by displacement reaction method which was carried out by imm-ersing the sintered silica preform which was prepared form fused silica powder in molten aluminu. an ac-tivation energy of 94kJ/mole was calculated from Al-SiO2 reaction data in 1000-130$0^{\circ}C$ temperature range With increase of reaction temperature the alumina particle in the Al2O3/Al composites produced with pur metal Al showed grain growth and the growth of alumina particle in Al2O3/Al composite produced by using of Mg contained Al alloy was inhibited. The flexural strength of Al2O3/Al composites produced at 100$0^{\circ}C$ showed the highest value as 393 MPa. Flexural strength of the composite fabricated at 85$0^{\circ}C$ showed higher deviation than that of the composite produced at above 100$0^{\circ}C$ Low flexural strength of the composite fa-bricated at 120$0^{\circ}C$ due to the growth of pore and alumina particle size. The hardness of composites de-pended on alumina content in Al2O3/Al composite decreased with increasing of aluminium content in case the same alumina content and increased with increasing of silicon content in composite.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.3
• /
• pp.29-34
• /
• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

• Journal of the Korean Ceramic Society
• /
• v.34 no.7
• /
• pp.781-789
• /
• 1997

Pressure sintered SiC specimens were joined using MgO-Al2O3-SiO2 (MAS) glass which has a thermal expansion coefficient similar to that of SiC. MAS melt showed excellent behavior of wetting on the SiC substrate over 148$0^{\circ}C$, and the wettability was much influenced by the joining atmosphere. The joining was conducted at 150$0^{\circ}C$ for 30 min in Ar atmosphere. The flexural strength of the joined specimen shows 342~380 MPa up to 80$0^{\circ}C$, which is almost the same as that of as-recieved SiC specimen. However, the flexural strength of the joined specimen decreased to about 80 MPa at 90$0^{\circ}C$ due to softening of the glass melt. The analyses od XRD and WDS show that the reaction between the SiC specimen and the MAS melt produces the oxycarbide glass, which had a high strength and a good stability at high temperatures.

• Journal of the Korean Ceramic Society
• /
• v.32 no.11
• /
• pp.1255-1261
• /
• 1995

Mullite-spinel-zirconia composites were prepared by reaction sintering of calcined alumina and magnesia, and zircon powders. The influence of calcining temperature on densification processes and on mechaical properties of subsequently sintered compacts was investigated. The mullite was formed by the reaction of $\alpha$-Al2O3 and amorphous SiO2 at firing temperatures over 141$0^{\circ}C$. The mullitization proceeded more rapidly in the specimen calcined at 110$0^{\circ}C$ than at either 120$0^{\circ}C$ or 130$0^{\circ}C$. Microstructures before and after the mullitization (or mullite dissociation) showed different morphologies, and their effects on mechanical properties were significant. The flexural strength and fracture toughness of the specimen calcined at 130$0^{\circ}C$ and subsequently fired at 145$0^{\circ}C$ were 316 MPa and 4.2Mpa.m1/2, respectively.

• Journal of the Korean Ceramic Society
• /
• v.44 no.7
• /
• pp.393-402
• /
• 2007

Polyaluminocarbosilane was synthesized by direct reaction of polydimethylsilane with aluminum(III)-acetylacetonate in the presence of zeolite catalyst. A fraction of higher molecular weight polycarbosilane was formed due to the binding of aluminium acetylacetonate radicals with the polycarbosilane backbone. Small amount of Si-O-Si bond was observed in the as-prepared polyaluminocarbosilane as the result. Polyaluminocarbosilane fiber was obtained through a melt spinning and was pyrolyzed and sintered into SiC fiber from $1200{\sim}2000^{\circ}C$ under a controlled atmosphere. The nucleation and growth of ${\beta}-SiC$ grains between $1400{\sim}1600^{\circ}C$ are accompanied with nano pores formation and residual carbon generation. Above $1800^{\circ}C$, SiC fiber could be sintered to give a fully crystallized ${\beta}-SiC$ with some ${\alpha}-SiC$.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1230-1231
• /
• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of 8${\sim}$20[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.01[%], 81.58[Mpa], 31.437[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites. In this paper, it is convinced that ${\beta}$-SiC based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
• /
• 2004.05a
• /
• pp.380-385
• /
• 2004

The efficiency of complex slurry preparation route for developing the high performance SiC matrix of RS-SiCf/SiC composites has been investigated. The green bodies for RS-SiC materials prior to the infiltration of nw/ten silicon were prepared with various C/SiC complex matrix slurries, which associated with both different sizes of starting SiC particles and blending ratios of starting SiC and carbon particles. The characterization of RS-SiC materials was examined by means of SEM, TEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, process optimization methodology is also discussed. The flexural strength of RS-SiC materials greatly depended on the content of residual Si. The decrease of starting SiC particle size in the C/SiC complex slurry was effective for improving the flexural strength of RS-SiC materials.

• Journal of the Korean Ceramic Society
• /
• v.23 no.5
• /
• pp.67-74
• /
• 1986

To investigate the effects of unreacted silicon on the $\alpha$/$\beta$transfornation variation of morphology and mechanical strength of Sintered Reaction Bonded Silicon Nitride the mixtures of $\alpha$-$Si_3N_4$ and Si powder and Reaction Bonded Silicon Nitride were heat treated. The heat-treatments were performed in Ar atmosphere in order to inhibit the nitridation of silicon. In the mixtures heat-trated at 1$700^{\circ}C$ the amount of $\beta$-TEX>$Si_3N_4$transformed from $\alpha$-TEX>$Si_3N_4$was sigmoidally increased and the equiaxed $\alpha$-TEX>$Si_3N_4$grains elongated with the amount of silicon and heat treating time. And large $\beta$-TEX>$Si_3N_4$grains grown into silicon were observed. On the other hand there was no change in the heat-treatment of pure $\alpha$-TEX>$Si_3N_4$In case of the heat-treatment of RBSN the same phenomena due to the silicon appearing from the decomposition of $\alpha$-Smatte and needle were observed. From the three point bending test the strength of the sintered specimens with the and without 5wt% silicon addition had 53Kg/$mm^2$ and 73Kg/$mm^2$ respectively.