• 제목/요약/키워드: Reaction-bonded silicon carbide

검색결과 33건 처리시간 0.066초

용융 Si 침윤법에 의해 제조된 반응소결 탄화규소 복합체에서 SiC 입자 크기의 영향 (The Effect of SiC Powder Size at Reaction Bonded SiC Composite Fabricated by a Molten Si Infiltration Method)

  • 윤성호;조경선;;정훈;김영도;박상환
    • 한국세라믹학회지
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    • 제45권8호
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    • pp.486-492
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    • 2008
  • Reaction bonded silicon carbide(RBSC) composite for heat-exchanger was fabricated by molten Si infiltration method. The raw materials with variable particle sizes were used in this experience. The finer the particle size in sintered silicon carbide was the more increasing 3-point bending strength and fracture toughness. As the adaptable particle sizes had been occupied interstice arising from packing sample, the mechanical properties were increased. In the PCS1-1 sample, the 3-point bending strength and fracture toughness were 323MPa and $4.9\;MPa{\cdot}m^{1/2}$, respectively.

탄화규소 분말의 주입성형 및 소결체의 특성 (Preparation and Properties of Reaction Bonded Silicon Carbide by Slip Casting Method)

  • 한인섭;양준환
    • 한국세라믹학회지
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    • 제28권8호
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    • pp.577-584
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    • 1991
  • Among various forming techniques for ceramics, we have studied the slip casting method for the binary system of SiC and carbon. The stability of the slip of silicon carbide and carbon were investigated by measurements of zeta potential, viscosity, sedimentation height, and also studied as functions of PH and amounts of dispersants. A preform of SiC and C was prepared by slip casting and heat treatment at 400∼600$^{\circ}C$ under N2 gas. The preform was reacted with Si metal at 1550$^{\circ}C$, 10-1 mmHg to give rise a reaction bonded SiC with a density of 3.0g/㎤ and a bending strength of 580 MPa.

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반응소결 탄화규소의 다양한 α-SiC 조성에 따른 기계적 특성과 전기저항 특성에 관한 연구 (A Study on the Mechanical Properties and Specific Resistivity of Reaction-Bonded Silicon Carbide According to α-SiC of Various Mixed Particle Size)

  • 김영주;박영식;정연웅;송준백;박소영;임항준
    • Composites Research
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    • 제25권6호
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    • pp.172-177
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    • 2012
  • 저저항 Si-SiC 소결체 제조를 위해 ${\alpha}$-SiC에서 조성과 C의 양을 변화시키면서 반응소결 특성을 고찰하였다. 시료준비는 정수압으로 성형체를 제조하였고, 용융Si 반응소결을 통해 시험편을 준비하였다. 반응소결체의 미세구조, 기계적 특성 및 전기저항 분석 결과 용융Si과 반응 후 미립의 ${\beta}$-SiC가 생성되었고, 치밀한 소결체를 형성하였다. 미립 ${\beta}$-SiC 생성량은 카본 양 에 따라 증가하였다. 그리고 C함량 10wt%이내에서 기계 R전기저항특성은 입도조성 영향이 크고 카본 함량 10wt%이상에서는 상전이 반응의 영향이 큼을 알 수 있었다.

반응소결 탄화규소의 접동조건에 따른 마찰계수 및 미세구조 (Friction Coefficient and Microstructure of Reaction-Bonded Silicon Carbide According to Sliding Conditons)

  • 김호균;김인섭;이병하
    • 한국세라믹학회지
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    • 제32권7호
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    • pp.825-831
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    • 1995
  • Reaction-bonded SiC-Si material was fabricated by infiltration of Si melt into a mixture of $\alpha$-SiC and carbon at 175$0^{\circ}C$ under the vacuum atmosphere. Wear properties were analyzed by ball-on-plate wear tester, changing loading weight, sliding speed, sliding time and atmosphere, Results showed that the friction coefficient was decreased with increasing load and sliding velocity. The lowest friction coefficient of 0.05 was obtained under an oil atmosphere. The analysis of the wear surface indicated that the areas wehre particles were pulled out and where free silicon particles worn out preferentially serve as liquid reservoirs to decrease the wear resistance.

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$\alpha$-SiC의 입도가 반응소결 탄화규소 소결체에 미치는 영향 (Effect of $\alpha$-Silicon Carbide Particle Size in Reaction Bonded Silicon Carbide)

  • 한인섭;양준환;정헌생
    • 한국세라믹학회지
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    • 제26권4호
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    • pp.583-587
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    • 1989
  • Various $\alpha$-silicon carbied and colloidal graphite particles were sintered at 155$0^{\circ}C$ in vacuum atmosphere by reaction bonding sintering method, and the physical properties and microstructural analysis of specimen were investigated. With decreasing particle size, sintered density and 3-point bending strength of materials were increased and 3.2${\mu}{\textrm}{m}$ specimen showed high density and strength, 3.05g/㎤, 40kg/$\textrm{mm}^2$, respectively. The results of X-ray diffractometer and optical micrographs analysis showed that graphite and silicon melt reacted to convert to fine $\beta$-SiC particle and the body was changed to dense material.

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주조접합법에 의한 TaC 직접합성에 관한 연구 (A Study on the Direct Synthesis of TaC by Cast-bonding)

  • 박홍일;이성열
    • 한국주조공학회지
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    • 제17권4호
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    • pp.371-378
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    • 1997
  • The study for direct synthesis of TaC carbide which was a reaction product of tantalum and carbon in the cast iron was performed. Cast iron which has hypo-eutectic composition was cast bonded in the metal mold with tantalum thin sheet of thickness of $100{\mu}m$. The contents of carbon and silicon of cast iron matrix was controlled to have constant carbon equivalent of 3.6. The chracteristics of microstructure and the formation mechanism of TaC carbide in the interfacial reaction layer in the cast iron/tantalum thin sheet heat treated isothermally at $950^{\circ}C$ for various time were examined. TaC carbide reaction layer was grown to the dendritic morphology in the cast iron/tantalum thin sheet interface by the isothermal heat treatment. The composition of TaC carbide was 48.5 at.% $Ti{\sim}48.6$ at.% C-2.8 at.% Fe. The hardness of reaction layer was MHV $1100{\sim}1200$. The thickness of reaction layer linearly increased with increasing the total content of carbon in the cast iron matrix and isothermal heat treating time. The growth constant for TaC reaction layer was proportional to the log[C] of the matrix. The formation mechanism of TaC reaction layer at the interface of cast iron/tantalum thin sheet was proved to be the interfacial reaction.

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