• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.1-211.1
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• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3223-3226
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• 2013

Spherical phospholipid-bilayers, vesicles, were prepared using the layer-by-layer double emulsion technique, which allows the bilayer to be formed asymmetrically. On the outer layer of the vesicles, the phospholipase D (PLD) reacted to convert phosphatidylcholine (PC) to phosphatidic acid (PA). The reaction induced the curvature change of the vesicles, which eventually led to rupture. The response time from the time of PLD injection to the time of rupture was measured against different vesicle curvatures and the outer layer phase, using the fluorescence intensity change of a pH-sensitive dye encapsulated within the vesicles. The effect of the vesicle curvature on the response was observed to be more significantly dramatic at the solid phase, compared to the liquid phase. Furthermore, in the solid phase, the response time was faster for 80 and 155 nm vesicles and, slower for 605 nm vesicles than similarly sized vesicles in the liquid phase vesicles. This difference in the response time was thought to result from the configuration determined by the phase difference and the PLD behavior.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1223-1225
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• 1994

The properties of $TiN/TiSi_2$ bilayer formed by a rapid thermal anneal ing is investigated when thin $SiO_2$ film exists at the Ti-Si interface. The competitive reaction for the $TiN/TiSi_2$ bilayer occurs above $600^{\circ}C$. The thickness of the $TiSi_2$ layer decreases with increasing $SiO_2$ film thickness while the TiN layer increases at the competitive reaction. The composition of TiN layer is changed to the $TiN_xO_y$ film due to the thin $SiO_2$ layer at the Ti-Si interface while the structure of the TiN and $TiSi_2$ layers was not changed.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.8 no.3
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• pp.173-179
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• 2010

In a HLW repository, the buffer is exposed to an elevated temperature due to a radioactive decay and geochemical conditions for a long time and such a hydrothermal condition may cause a significant loss of its barrier function. This study carried out hydrothermal tests with a domestic smectite clay to investigate the changes in the expandibility, layer charge, and cation exchange capacity of the smectite. When the temperature and potassium concentration in solution was increased for the hydrothermal treatments, the expandibility decreased, the layer charge negatively increased, and the CEC also decreased.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.609-614
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• 1999

The effect of the amount of $SiO_2$dopant on the behavior of $AlO_2$$O_3$-composite formation by melt oxdation of Al-alloy was examined in this paper. The $SiO_2$powder was spread on the top surface of the Al-1Mg-3-Si-5Zn-1Cu alloy in th alumina crucible. The selected amount of each powder was 0.03, 0.10, 0.16g/$\textrm{cm}^2$. The oxidation behavior was determined by observing the weight gain after the heat treatment for 10 hours at 1373K. The macroscopic structure of formed oxide layer was examined by an optical microscope. The top surface and the cross-section of the grown oxide layer were investigated by SEM and analysed by EDX. The $SiO_2$ powder was determined to enhance oxidation by thermit reaction with Al which reduced the growth incubation period of the oxidation layer. As the amount of the $SiO_2$dopant increased, the growth rate decreased due to the precipitated Si which blocked the Al-alloy channel in the composite materials. However, more uniform layer was obtained due to the occurrance of the enhanced oxidation reaction in the whole alloy surface compared to the case of addition of less amount of dopant.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.659-662
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• 1995

Co-ferrite ($CoO-Fe_{2}O_{3}$) thin films have been prepared by two ways of low temperature solid reaction including oxidation process, being based on $Co-layer/{\alpha}-Fe_{2}O_{3}$ films and $Co-layer/Fe_{3}O_{4}$ films. Magnetic properties of both Co-ferrite films have been measured and compared. The samples from $Co-layer/Fe_{3}O_{4}$ films have a large coercive force in the direction perpendicular and have a great poler kerr rotation angle at wavelength 700 nm than ones from $Co-layer/{\alpha}-Fe_{2}O_{3}$ films. The typical magnetic properties are as follows; saturation magnetization $4{\pi}Ms$, 2.9 kG; remnant magnetization $4{\pi}Mr$, 2.0 kG; coercive force Hc, 4.0 kOe; kerr rotation angle ${\PHI}k$, 0.39 deg($\lambda\;=\;700\;nm$); and initial magnetization energy E, $3.3\;{\times}\;10^6\;erg/\textrm{m}^3$, respectively.

• Journal of Korean Society on Water Environment
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• v.38 no.4
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• pp.171-176
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• 2022

Recently, an autotrophic single-stage nitrogen removal (ASSNR) process based on the anaerobic ammonium oxidation (ANAMMOX) reaction has been proven as an economical ammonia treatment. It is highly evident that double-layered gel beads are a promising alternative to the natural biofilm for ASSNR because of the high mechanical strength of poly(vinyl alcohol) (PVA)/alginate structure and efficient protection of ANAMMOX bacteria from dissolved oxygen (DO) due to the thick outer layer. However, the thick outer layer results in severe mass transport limitation and consequent lowered bacterial activity. Therefore, the effects of the thickness of the outer layer on the overall reaction rate were tested in the biofilm model using AQUASIM for ammonia-oxidizing bacteria (AOB), nitrite-oxidizing bacteria (NOB) and ANAMMOX bacteria. A thickness of 0.5~1.0 mm is preferred for the maximum total nitrogen (TN) removal. In addition, a DO of 0.5 mg/L resulted in the best total nitrogen removal. A higher DO induces NOB activity and consequent lower TN removal efficiency. The optimal density of AO B and NO B density was 1~10% for a 10% ANAMMOX bacterial in the double-layered PVA/alginate gel beads. The real effects of operating parameters of the thickness of the outer layer, DO and concentrations of biomass balance should be intensively investigated in the controlled experiments in batch and continuous modes.

• Korean Journal of Materials Research
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• v.28 no.6
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• pp.324-329
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• 2018

Needle-like NiO protecting layers on NiCrAl alloy foam, used as support for hydrogen production, are introduced through electroplated Ni and subsequent microwave annealing. To improve the stability of the NiCrAl alloy foam, oxygen concentration of microwave annealing to form a needle-like NiO layer with good chemical stability and corrosion resistance is controlled in a range of 20 and 50 %. As the oxygen concentration increases to 50 %, needle-like NiO forms a dense coating layer on the NiCrAl alloy foam; this layer formation can be attributed to accelerated growth of the (200) plane. In addition, the increased oxygen concentration causes increased NiO/Ni ratio of the resultant coating layer on NiCrAl alloy foam due to improved rate of the oxidation reaction. As a result, the introduction of dense needle-like NiO layers formed at 50 % oxygen concentration improves the chemical stability of the NiCrAl alloy foam by protecting the direct electrochemical reaction between the electrolyte and the foam. Thus, needle-like NiO can be proposed as a superb protecting layer to improve the chemical stability of NiCrAl alloy form.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.75-75
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• 2011

Recently, dye-sensitized solar cell (DSSC) attracts great attention as a promising alternative to conventional silicon solar cells. One of the key components for the DSSC would be the nanocrystalline TiO2 electrode, and the control of interface between TiO2 and TCO is a highly important issue in improving the photovoltaic conversion efficiency. In this work, we applied various interfacial layers, and analyzed their effect in enhancing photovoltaic properties. In overall, introduction of interfacial layers increased both the Voc and Jsc, since the back-reaction of electrons from TCO to electrolyte could be blocked. First, several metal oxides with different band gaps and positions were employed as interfacial layer. SnO2, TiO2, and ZrO2 nanoparticles in the size of 3-5 nm have been synthesized. Among them, the interfacial layer of SnO2, which has lower flat-band potential than that of TiO2, exhibited the best performance in increasing the photovoltaic efficiency of DSSC. Second, long-range ordered cubic mesoporous TiO2 films, prepared by using triblock copolymer-templated sol-gel method via evaporation-induced self-assembly (EISA) process, were utilized as an interfacial layer. Mesoporous TiO2 films seem to be one of the best interfacial layers, due to their additional effect, improving the adhesion to TCO and showing an anti-reflective effect. Third, we handled the issues related to the optimum thickness of interfacial layers. It was also found that in fabricating DSSC at low temperature, the role of interfacial layer turned out to be a lot more important. The self-assembled interfacial layer fabricated at room temperature leads to the efficient transport of photo-injected electrons from TiO2 to TCO, as well as blocking the back-reaction from TCO to I3-. As a result, fill factor (FF) was remarkably increased, as well as increase in Voc and Jsc.

• Applied Chemistry for Engineering
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• v.25 no.6
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• pp.577-580
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• 2014

Indium hydroxy sulfide ($In(OH)_xS_y$) as a cadmium (Cd)-free buffer layer for $CuInGaSe_2$ (CIGS) solar cells was prepared by the chemical bath deposition (CBD) and the reaction time was optimized. The band gap energy and transmittance data alongside the thickness results from the direct observation with focused ion beam system (FIB) could be a powerful tool for optimizing the conditions. In addition, X-ray diffractometer (XRD), X-ray photoelectron microscopy (XPS), and scanning electron microscope (SEM) were also employed for the layer characterization. The results indicated that the optimum reaction time for $In(OH)_xS_y$ buffer layer deposition by CBD was 20 min at $70^{\circ}C$ under the conditions employed. At the optimum conditions, the buffer layer thickness was near 57 nm and the band gap energy was 2.7 eV. In addition, it was found that there was no XPS peak shift in between the buffer layers deposited on molybdenum (Mo)/glass and that on CIGS layer.