• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.10a
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• pp.197-203
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• 1999

Stainless steels in general has passive film having strong corrosion resistance on surface. Therefore it must be necessarily removed by etching in mixing solution of sulfuric and chloric acid before Nitriding treatment. But in the ion nitriding, nitride layer was easily formed because passive film was removed without difficult by sputtering effect. The removal extent of these passive films was greatly effected by gas mixing ratios and pressure and holding times of pre sputtering factors in pre sputtering stage. As a results of experiment it has been known that pre sputtering pressure and holding time was not nearly effective on the formation behavior of nitride layer. But when A/H2 gas mixing ratios was 1/2 (vol%) was the most effective of the all pre sputtering conditions. It was resulted from the combination of mechanical reaction byArgon bombardment and chemical reaction by reduction of hydrogen on the passive film.

• Proceedings of the KWS Conference
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• 2005.11a
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• pp.219-221
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• 2005

Sn-9Zn solder balls were bonded to Cu, ENIG (Electroless Nickel/Immersion Gold) and electrolytic Au/Ni pads, and the effect of aging on their joint reliability was investigated. The interfacial products were different from the general reaction layer formed in a Sn-base solder. The intermetallic compounds formed in the solder/Cu joint were $Cu_{5}Zn_{8}$ and $Cu_{6}Sn_{5}$. After aging treatment, voids formed irregularly at the bottom side of the solder because of Sn diffusion into the $Cu_{5}Zn_{8}$ IMC. In the case of the solder/ENIG joint, $AuZn_{3}$ IMCs were formed at the interface. In the case of the Au/Ni/Cu substrate, an $AuZn_{3}$ IMC layer formed at the interface due to the fast reaction between Au and Zn. In addition, the $AuZn_{3}$ IMC layer became detached from the interface after reflow. When the aging time was extended to 100 h, $Ni_{5}Zn_{21}$ IMC was observed on the Ni substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.418-418
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• 2012

We fabricated a new type of hybrid film using molecular layer deposition (MLD). The MLD is a gas phase process analogous to atomic layer deposition (ALD) and also relies on a saturated surface reaction sequentially which results in the formation of a monolayer in each sequence. In the MLD process, polydiacetylene (PDA) layers were grown by repeated sequential surface reactions of titanium tetrachloride and 2,4-hexadiyne-1,6-diol with ultraviolet (UV) polymerization under a substrate temperature of $100^{\circ}C$. Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of the hybrid films. Polymerization of the hybrid films was confirmed by infrared (IR) spectroscopy and UV-Vis spectroscopy. Composition of the films was confirmed by IR spectroscopy and X-ray photoelectron (XP) spectroscopy. The titanium oxide cross-linked polydiacetylene (TiOPDA) hybrid films exhibited good thermal and mechanical stabilities.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1167-1168
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• 2006

In this study, the pure iron powder was treated with aqueous phosphoric acid to produce phosphate insulating layer on the surface. After drying the powder, it was compacted in a mold with a diameter of 20mm at 800MPa. The powder compacts were then heat treated at $500^{\circ}C$ for 1 hour. The results showed that insulated iron powder was obtained with uniform phosphate layer by chemical reaction. With increased amount of phosphate layer, the core loss and density of compacts were decreased. It was also found that the addition of ethyl alcohol during insulating reaction resulted in improved core loss value.

• Journal of Information Display
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• v.2 no.2
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• pp.45-51
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• 2001

Four types of conjugated polymers, poly(MEHPV-PV), poly(MEHPV-BPV), poly(MEHPV-AV) and poly(PZV-AV) were synthesized by Homer-Emmons reaction using potassium tert-butoxide. The Homer-Emmons reaction gave electroluminescent(EL) copolymers in good yield. Of the EL copolymers synthesized, poly(PZV-AV) containing phenothiazinylene vinylene and anthrylene vinylene as repeat unit exhibited red color in the light emitting diode(LED) which was very close to the NTSC standard red. Besides, double layer LED made with $Alq_3$ electron transport layer exhibited both enhanced emission intensity and efficiency compared to the single layer LED.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.111-116
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• 2004

An experiment was carried out to confirm the validity of time series evaluation of supersonic mixing condition by using catalytic reaction on a platinum wire. Geseous hydrogen was injected parallel to supersonic freestream (M$\infty$ $\approx$ 1.81) from a slit injector, which was located at backward facing step. Time series condition of supersonic mixing was evaluated by using W-type probe which has a platinum wire and reference wire (nickel wire). The evaluation was by simultaneously measuring each electric circuit which kept the temperature of wire constant. Investigations were also conducted for helium, air and no secondary injectant cases to compare with the hydrogen injectant case. The results indicated that it was possible to measure the time series behavior of air and hydrogen supersonic mixing layer or coherent motion of turbulence by using this evaluation.

• Journal of the Korean Vacuum Society
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• v.3 no.4
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• pp.414-419
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• 1994

Surface of Pt/$Al_2O_3$ model catalyst was produced on an aluminum foil with surface area of 1 $cm^2$ The aluminum surface was oxidized under $10 ^5Torr$Torr oxygen and platinum was deposited on top of the oxide layer using a plasma evaporation source. Conversion of I-butene was performed on the model catalyst surface. Isomerization was the major reaction in I-butene conversion on the aluminum oxide layer. Addition of Pt on the aluminum oxide layer induces hydrogenation of I-butene. Selectivity for the hydrogenation increases as the amount of Pt on alumina increases.

• Journal of Surface Science and Engineering
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• v.23 no.4
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.633-639
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• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.869-874
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• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.