• Title/Summary/Keyword: Rapid thermal process

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Study on the Effect of Thermal Stratification on DME/n-Butane HCCI Combustion (열적성층화가 DME/n-Butane 예혼합압축자기착화연소에 미치는 영향에 관한 연구)

  • Lim, Ock-Taeck
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.34 no.12
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    • pp.1035-1042
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    • 2010
  • The thermal stratification effect has been thought as one of the way to avoid dramatically generating the heat from HCCI combustion. We investigate the effect of thermal stratification on HCCI combustion fueled by DME and n-Butane. The thermal stratification occurs in a combustion chamber of a rapid compression machine with premixture by buoyancy effect that is made of fuel and air. The premixture is then adiabatically compressed, and during the process, the in-cylinder gas pressure is measured and two-dimensional chemiluminescence images are prepared and analyzed. Under the thermal stratification, the LTR starting time and the HTR starting time are advanced than that of homogeneous case. Further, the LTR period and the luminosity duration under homogeneous conditions are shorter than the corresponding quantities under stratified conditions. Additionally, under stratified conditions, the brightest luminosity intensity is delayed longer than that of homogeneous condition.

The Effects of Thermal Decomposition of Tetrakis-ethylmethylaminohafnium (TEMAHf) Precursors on HfO2 Film Growth using Atomic Layer Deposition

  • Oh, Nam Khen;Kim, Jin-Tae;Ahn, Jong-Ki;Kang, Goru;Kim, So Yeon;Yun, Ju-Young
    • Applied Science and Convergence Technology
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    • v.25 no.3
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    • pp.56-60
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    • 2016
  • The ALD process is an adequate technique to meet the requirements that come with the downscaling of semiconductor devices. To obtain thin films of the desired standard, it is essential to understand the thermal decomposition properties of the precursors. As such, this study examined the thermal decomposition properties of TEMAHf precursors and its effect on the formation of $HfO_2$ thin films. FT-IR experiments were performed before deposition in order to analyze the thermal decomposition properties of the precursors. The measurements were taken in the range of $135^{\circ}C-350^{\circ}C$. At temperatures higher than $300^{\circ}C$, there was a rapid decrease in the absorption peaks arising from vibration of $Sp^3$ C-H stretching. This showed that the precursors experienced rapid decomposition at around $275^{\circ}C-300^{\circ}C$. $HfO_2$ thin films were successfully deposited by Atomic Layer Deposition (ALD) at $50^{\circ}C$ intervals between $150^{\circ}C$ to $400^{\circ}C$; the deposited films were characterized using a reflectometer, X-ray photoelectron spectroscopy (XPS), Grazing Incidence X-ray Diffraction (GIXRD), and atomic force microscopy (AFM). The results illustrate the relationship between the thermal decomposition temperature of TEMAHf and properties of thin films.

Thermal Shock Behavior of $Al_2O_3$-$ZrO_2$ Ceramics Prepared by a Precipitation Method (침전법으로 제조한 $Al_2O_3$-$ZrO_2$계 세라믹스의 열충격 거동)

  • 홍기곤;이홍림
    • Journal of the Korean Ceramic Society
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    • v.28 no.1
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    • pp.11-18
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    • 1991
  • A precipitation method, one of the most effective liquid phase reaction methods, was adopted in order to prepare high-tech Al2O3/ZrO2 composite ceramics, and the effects of stress-induced phase transformation of ZrO2 on thermal shock behavior of Al2O3-ZrO2 ceramics were investigated. Al2(SO4)3.18H2O, ZrOCl2.8H2O and YCl3.6H2O were used as starting materials and NH4OH as a precipitation agent. Metal hydroxides were obtained by single precipitation(process A) and co-precipitation(process B) method at the condition of pH=7, and the composition of Al2O3-ZrO2 composites was fixed as Al2O3-15v/o ZrO2(+3m/o Y2O3). Critical temperature difference showing rapid strength degradation by thermal shock showed higher value in Al2O3/ZrO2 composites(process A : 20$0^{\circ}C$, process B : 215$^{\circ}C$) than in Al2O3(175$^{\circ}C$). The improvement of thermal shock property for Al2O3/ZrO2 composites was mainly due to the increase of strength at room temperature by adding ZrO2. The strength degradation was more severe for the sample with higher strength at room temperature. Crack initiation energies by thermal shock showed higher values in Al2O3/ZrO2 composites than in Al2O3 ceramics due to increase of fracture toughness by ZrO2.

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3D porous ceramic scaffolds prepared by the combination of bone cement reaction and rapid prototyping system

  • Yun, Hui-Suk;Park, Ui-Gyun;Im, Ji-Won
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.56.2-56.2
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    • 2012
  • Clinically-favored materials for bone regeneration are mainly based on bioceramics due to their chemical similarity to the mineral phase of bone. A successful scaffold in bone regeneration should have a 3D interconnected pore structure with the proper biodegradability, biocompatibility, bioactivity, and mechanical property. The pore architecture and mechanical properties mainly dependent on the fabrication process. Bioceramics scaffolds are fabricated by polymer sponge method, freeze drying, and melt molding process in general. However, these typical processes have some shortcomings in both the structure and interconnectivity of pores and in controlling the mechanical stability. To overcome this limitation, the rapid prototyping (RP) technique have newly proposed. Researchers have suggested RP system in fabricating bioceramics scaffolds for bone tissue regeneration using selective laser sintering, powder printing with an organic binder to form green bodies prior to sintering. Meanwhile, sintering process in high temperature leads to bad cost performance, unexpected crystallization, unstable mechanical property, and low bio-functional performance. The development of RP process without high thermal treatment is especially important to enhance biofunctional performance of scaffold. The purpose of this study is development of new process to fabricate ceramic scaffold at room temperature. The structural properties of the scaffolds were analyzed by XRD, FE-SEM and TEM studies. The biological performance of the scaffolds was also evaluated by monitoring the cellular activity.

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Developed Inherent Strain Method Considering Phase Transformation of Mild Steel in Line Heating (선상가열시 강의 상변태를 고려한 개선된 고유변형도 기반의 등가하중법)

  • Ha, Yun-Sok;Jang, Chang-Doo
    • Journal of the Society of Naval Architects of Korea
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    • v.41 no.6
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    • pp.65-74
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    • 2004
  • The inherent strain method is known to be very efficient in predicting the deformation of steel plate by line heating. However, in the actual line heating process in shipyard, the rapid quenching changes the phase of steel. In this study, In order to consider additional effects under phase transformation, inherent strain regions were assumed to expand. Also, when calculating inherent strain, material properties of steel in heating and cooling are applied differently considering phase transformation. In this process, a new method which can reflect thermal volume expansion of martensite is suggested.8y the suggested method, it was possible to predict the plate deformations by line heating more precisely.

Load Relaxation and Creep Transition Behavior of a Spray Cast Hypereutectic Al-Si Based Alloy (분무 주조 과공정 Al-Si계 합금의 응력이완 및 Creep 천이 거동)

  • Kim M. S.;Bang W.;Park W. J.;Chang Y. W.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2005.05a
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    • pp.176-179
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    • 2005
  • Spray casting of hypereutectic Al-Si based alloy has been reported to provide distinct advantages over ingot metallurgy (IM) or rapid solidification/powder metallurgy (RS/PM) process in terms of microstructure refinement. Hypereutectic Al-Si based alloys have been regarded attractive for automotive and aerospace application, due to high specific strength, good wear resistance, low coefficient of thermal expansion, high thermal stability, and good creep resistance. In this study, hypereutectic Al-25Si-2.0Cu-1.0Mg alloy was prepared by OSPREY spray casting process. High temperature deformation behavior of the hypereutectic Al-Si based alloy has been investigated by applying the internal variable theory proposed by Chang et al. The change of strain rate sensitivity and Creep transition were analyzed by using the load relaxation test and constant creep test.

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Thermal Hazards of Polystyrene Polymerization Process by Bulk Polymerization (벌크 중합법에 의한 폴리스티렌 중합공정의 열적위험성)

  • Han, In-Soo;Lee, Jung-Suk;Lee, Keun-Won
    • Journal of the Korean Institute of Gas
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    • v.17 no.4
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    • pp.1-8
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    • 2013
  • The aim of this study is to assess thermal hazards of polystyrene polymerization process by bulk polymerization with accelerating rate calorimeter(ARC) and Multimax reactor system(MM). From this study, we found out that the polymerization process should be operated at reaction temperature of $120^{\circ}C{\sim}130^{\circ}C$. At reaction temperature over $130^{\circ}C$, there was a runaway reaction hazard due to the temperature control failure following a viscosity increase of reaction products. With a cooling failure of a reactor in the early stage of process operation at the reaction temperature ($120^{\circ}C{\sim}130^{\circ}C$), there was a high thermal hazard of burst of a reactor's rupture disk or explosion of a reactor caused by the rapid rise of temperature and pressure to $340^{\circ}C$, 5.3 bar respectively within 30 - 50 minutes.

A Study on Solid-Phase Epitaxy Emitter in Silicon Solar Cells (고상 성장법을 이용한 실리콘 태양전지 에미터 형성 연구)

  • Kim, Hyunho;Ji, Kwang-Sun;Bae, Soohyun;Lee, Kyung Dong;Kim, Seongtak;Park, Hyomin;Lee, Heon-Min;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Current Photovoltaic Research
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    • v.3 no.3
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    • pp.80-84
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    • 2015
  • We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).

Stress Dependence of Thermal Stability of Nickel Silicide for Nano MOSFETs

  • Zhang, Ying-Ying;Lim, Sung-Kyu;Lee, Won-Jae;Zhong, Zhun;Li, Shi-Guang;Jung, Soon-Yen;Lee, Ga-Won;Wang, Jin-Suk;Lee, Hi-Deok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.15-16
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    • 2006
  • The thermal stability of nickel silicide with compressively and tensilely stressed nitride capping layer has been investigated in this study. The Ni (10 nm) and Ni/Co/TiN (7/3/25 nm) structures were deposited on the p-type Si substrate. The stressed capping layer was deposited using plasma enhanced chemical vapor deposition (PECVD) after silicide formation by one-step rapid thermal process (RTP) at $500^{\circ}C$ for 30 sec. It was found that the thermal stability of nickel silicide depends on the stress induced by the nitride capping layer. In the case of Ni (10 nm) structure, the high compressive sample shows the best thermal stability, whereas in the case of Ni/Co/TiN (7/3/25 nm) structure, the high compressive sample shows the worst thermal stability.

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Modulation of Defect States in Co- and Fe-implanted Silicon by Rapid Thermal Annealing

  • Lee, Dong-Uk;Lee, Kyoung-Su;Pak, Sang-Woo;Suh, Joo-Young;Kim, Eun-Kyu;Lee, Jae-Sang
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.314-314
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    • 2012
  • The dilute magnetic semiconductors (DMS) have been developed to multi-functional electro-magnetic devices. Specially, the Si based DMS formed by ion implantation have strong advantages to improve magnetic properties because of the controllable effects of carrier concentration on ferromagnetism. In this study, we investigated the deep level states of Fe- and Co-ions implanted Si wafer during rapid thermal annealing (RTA) process. The p-type Si (100) wafers with hole concentration of $1{\times}10^{16}cm^{-3}$ were uniformly implanted by Fe and Co ions at a dose of $1{\times}10^{16}cm^{-2}$ with an energy of 60 keV. After RTA process at temperature ranges of $500{\sim}900^{\circ}C$ for 5 min in nitrogen ambient, the Au electrodes with thickness of 100 nm were deposited to fabricate a Schottky contact by thermal evaporator. The surface morphology, the crystal structure, and the defect state for Fe- and Co- ion implanted p-type Si wafers were investigated by an atomic force microscopy, a x-ray diffraction, and a deep level transient spectroscopy, respectively. Finally, we will discuss the physical relationship between the electrical properties and the variation of defect states for Fe- and Co-ions implanted Si wafer after RTA.

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