• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.910-913
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• 2001

Rapid Prototyping(RP) techniques have unique characteristics according to their working principle: the stair-stepped surface of a part due to layer-by-layer stacking, low building speed, and additional post-processing to improve surface roughness. A new RP process, Variable Lamination Manufacturing by using expandable polystyrene foam(VLM-S), has been developed to overcome the unfavorable characteristics. The objective of this study is to investigate the thermal characteristics and skeleton size effects as the hotwire cuts EPS foam sheet in order to improve dimensional accuracy of the parts, which is produced by VLM-S. Empirical and analytical approaches are performed to find the relationship between cutting speed and heat input, and the relationship between maximum available cutting speed and heat input. In addition, empirical approaches are carried out to find the relationship between cutting error and skeleton size, and cutting deviation and skeleton size. Based on these results, the optimal hotwire cutting condition and available minimum skeleton size are derived. The outcomes of this study are reflecting in the enhancement of VLM-S input data generation S/W.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.2
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Transactions of Materials Processing
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• v.16 no.2 s.92
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• pp.113-119
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• 2007

Rapid mold heating has been recent issue to enable the injection molding of thin-walled parts or micro/nano structures. Induction heating is an efficient way to heat material by means of an electric current that is caused to flow through the material or its container by electromagnetic induction. It has various applications such as heat treatment, brazing, welding, melting, and mold heating. The present study covers a finite element analysis of the induction heating process which can rapidly raise mold temperature. To simulate the induction heating process, the electromagnetic field analysis and transient heat transfer analysis are required collectively. In this study, a coupled analysis connecting electromagnetic analysis with heat transfer simulation is carried out. The estimated temperature changes are compared with experimental measurements for various heating conditions.

• The Korean Journal of Food And Nutrition
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• v.11 no.4
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• pp.402-408
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• 1998

A rapid processing method for fermented sauce of favorable flavor was investigated with low-usefulness marine resources. Hydrolyzed at optimal conditions for 6 hours usuing alcalase, and separated by molecularporous membrane. It's very effective for remove bitter taste at below M.W. 100 dalton, and effective at below M.W.500 dalton. Added 2% invert sugar in fermented sauce at below M.W.500 dalton, and thermal treatment at 100$^{\circ}C$ for 30 minutes were improved flavor. Chemical composition of fermented sauce using hair tail were 80.7% of moisture, 2.2% of carbohydrate, 1.8% of total nitrogen, 1.6% of amino nitrogen and pH was 6.5. The ratio of amino nitrogen in total nitrogen was 77.8%. And chemical composition of fermented sauce used gizzard shad, kangdale, pen shell and oyster were similar to fermented sauce used hair tail. Total nitrogen were above 1.8% and the ratio of amino nitrogen in total nitrogen was 77.7∼84.2% in all fermented sauce. Amino acid contents in fermented sauce used hair tail, gizzard shad, kangdale, pen shell and oyster were 4,318.1mg%, 4,681.3mg%, 3,156.2mg% and 4,175.0mg%, respectively. And the predominant free amino acid were glutamic acid, lysine and glycine in all fermented sauce.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.652-652
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• 2013

The conventional thermal chemical vapor deposition (CVD) setup for the graphene synthesis has mainly used convective heat transfer in order to heat a catalyst (e.g. Cu) up to $1,000^{\circ}C$. Although the conventional CVD has been so far widely accepted as the most appropriate candidate enabling mass-production of high-quality graphene, this method has stillremained under the standard for the commercialization largely due to the poor productivity arisen out of the required long processing time. Here, we introduced a fast and efficient synthetic route toward CVD-graphene. Unlike the conventional CVD using convection heat transfer, we adopted a CVD setup utilizing conduction heat transfer between Cu catalyst and rapid heating source. The high thermal conductive nature of Cu and the employed rapid heating source led to the remarkable reduction in processing timeas compared to the conventional convection based CVD (Fig. 1A), moreover, the synthesized graphene was turned out to have comparable quality to that synthesized by the conventional CVD (Fig. 1B). For the optimization of the conduction based CVD process, the parametric studies were thoroughly performed using through Raman spectroscopy and electrical sheet resistance measurement. Our approach is thought to be worth considerable in order to enhance productivity of the CVD graphene in the industry.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.6
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• pp.55-65
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• 1998

In industrial fields, RTP(rapid thermal processing) system is widely used for improving the oxidation and the annealing in semiconductor manufacturing process. The main control factors are temperature control of wafer and uniformity in the wafer. In this paper, we propose an $H^{\infty}$ controller design of RTP system satisfying robust stability and performance using weighted mixed sensitivity miniimization and loop shaping technique. And we need reduction technique because of the difficulty of implementation with the obtained high order controller for original model and reduced models, namely, Hankel, square-root balanced, and Schur balanced methods. An example is proposed to show the validity of the proposed method.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.486-491
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• 2008

This paper describes a model identification method that has been applied to a commercial 12-inch RTP (rapid thermal processing) equipment with an ultimate aim to develop a high-performance advanced controller. Seven thermocouples are attached on the wafer surface and twelve tungsten-halogen lamp groups are used to heat up the wafer. To obtain a MIMO balanced state space model, multiple SIMO (single-input multiple-output) identification with highorder ARX models have been conducted and the resulting models have been combined, transformed and reduced to a MIMO balanced state space model through a balanced truncation technique. The identification experiments were designed to minimize the wafer warpage and an output linearization block has been proposed for compensation of the nonlinearity from the radiation-dominant heat transfer. As a result from the identification at around 600, 700, and $800^{\circ}C$, respectively, it was found that $y=T(K)^2$ and the state dimension of 80-100 are most desirable. With this choice the root-mean-square value of the one-step-ahead temperature prediction error was found to be in the range of 0.125-0.135 K.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1358-1366
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• 1988

The dual dielectric films have been grown on single-crystalline silicon substrates with the thickness ranging from 125A to 180A at various gas and temperature conditions by using rapid thermal process that included independent nitridation step. The film characteristics and their dependence on the contents of the hydrochloric gas and the processing time have been studied. By the addition of the hydrochloric gas, the initial oxide thickness was significantly changed, but after sequential nitridation processes the thickness of the films was nevertheless a little bit varied within 10A. All the samples of the dual dielectric films show the increased breakdown voltages in proportion to the additive contents of the hydrochloric gas and also show the higher breakdown strengths than the thermal oxide and nitrided oxide films grown by the conventional furnance process or the rapid thermal nitridation process that was composed of the dependent nitridation cycles.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1350-1357
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• 1988

The dual dielectric films have been grown on single-crystalline silicon substrates with the thickness ranging from 125A to 180A at various gas and temperature conditions by using rapid thermal process that included independent nitridation step. The film characteristics and their dependence on the contents of the hydrochloric gas and the processing time have been studied. By the addition of the hydrochloric gas, the initial oxide thickness was significantly changed, but after sequential nitridation processes the thickness of the films was nevertheless a little bit varied within 10A. All the samples of the dual dielectric films show the increased breakdown voltages in proportion to the additive contents of the hydrochloric gas and also show the higher breakdown strengths than the thermal oxide and nitrided oxide films grown by the conventional furnance process or the rapid thermal nitridation process that was composed of the dependent nitridation cycles.