• 제목/요약/키워드: Random field Ising model

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Variational Bayesian inference for binary image restoration using Ising model

  • Jang, Moonsoo;Chung, Younshik
    • Communications for Statistical Applications and Methods
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    • 제29권1호
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    • pp.27-40
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    • 2022
  • In this paper, the focus on the removal noise in the binary image based on the variational Bayesian method with the Ising model. The observation and the latent variable are the degraded image and the original image, respectively. The posterior distribution is built using the Markov random field and the Ising model. Estimating the posterior distribution is the same as reconstructing a degraded image. MCMC and variational Bayesian inference are two methods for estimating the posterior distribution. However, for the sake of computing efficiency, we adapt the variational technique. When the image is restored, the iterative method is used to solve the recursive problem. Since there are three model parameters in this paper, restoration is implemented using the VECM algorithm to find appropriate parameters in the current state. Finally, the restoration results are shown which have maximum peak signal-to-noise ratio (PSNR) and evidence lower bound (ELBO).

Dielectric and Electrical Properties of Ce,Mn:SBN

  • Kang, Bong-Hoon;Paek, Young-Sop;Rhee, Bum-Ku;Lim, Ki-Soo;Joo, Gi-Tae
    • 한국세라믹학회지
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    • 제40권7호
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    • pp.615-619
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    • 2003
  • Temperature and frequency dependence of dielectric and electrical properties was investigated in cerium and manganese doped Sr$\_$0.6/Ba$\_$0.4/Nb$_2$O$\_$6/(60SBN) ceramic system. Structural deformation of 60SBN by dopants did not appeared. 1350$^{\circ}C$-10 h sintered specimen had higher densification than 1250$^{\circ}C$-10 h sintered one, to which dielectric properties are related. That the feature of dielectric maxima peaks was typical Diffusive Phase Transition (DPT), it was explained by "random-field Ising model". Even though 60SBN has large dielectric loss at high frequency above 100 ㎑, it is desirable for optical applications because of low dielectric loss at low frequency. From Arrhenius plot of temperature, the activation energy was calculated to 0.45-0.49 eV.