• Journal of the Korean Ceramic Society
• /
• v.40 no.12
• /
• pp.1202-1207
• /
• 2003

Using a recently developed Hybric Plasma-Particle Accelerating Impact Deposition (HP-PAID) process, synthesis of nanostructured silicon coatings has been investigated by injecting vapor-phase TEOS (tetraethosysilane, (C$_2$H$\_$5/O)$_4$Si) into an Ar hybrid plasma. The plasma jet with reactants was expanded through nozzle into a deposition chamber, with the pressure dropping from 700 to 10 torr. Ultrafine particles accelerated in the free jet downstream of the nozzle, deposited by an inertial impaction onto a temperature controlled substrate. By using this process, nanostructured amorphous silicon coatings with grain size smaller than 10 nm could be synthesized. These samples were annealed in an Ar and crystallized at 900$^{\circ}C$ for 30 min. TEM analysis showed that the annealed coatings were also composed of nanoparticles smaller than 10 nm, which showed a good consistency that the average grain size of 7 nm was also estimated from a peak shift of 2.39 cm$\^$-1/ and Full Width at Half Maximum (FWHM) 5.92 cm$\^$-1/ of Raman analysis. The noteworthy is that a strong PL peak at 398 nm was also obtained for this sample, which indicates that the deposited coatings also contained 3∼4 nm nanostructured grains.

• Journal of Conservation Science
• /
• v.37 no.2
• /
• pp.77-89
• /
• 2021

In this study, materials and color formation techniques were assessed for black potteries excavated from the Janghyeon-dong, Jungsan-dong and Gyodong-ri sites during the Proto-Three Kingdoms period in Ulsan, Korea. Although the black potteries were black superficially, the inner cores were either black or reddish yellow. Microscopy analysis identified that body clay was used for reddish iron oxide rich soils with quartz, alkali feldspar and mica, along with grains of myrmechite texture. Additionally, as marginal differences exist in the contents of SiO₂, Fe₂O₃ and CaO, the composition of the host rock and clay distributed around the sites was affected. Thus, we can deduce that pottery was made by soiling at a short distance. Raman spectroscopy results revealed that the black layer of the black pottery was used as amorphous combustion carbon. In addition, as a transparent layer of brown lacquer was observed on the substrate that was in contact with the surface layer, the black layer of the pottery induced black color development by a combination of combustion carbon and lacquer. Based on the mineral composition and microtexture of the body clay, the firing temperature of the potteries seemed to range from 750 to 850℃, whereas the lacquer layer was pyrolyzed at 468℃ by thermal analysis. Therefore, a combined layer of combustion carbon and lacquer, which formed the black color, was painted after the body clay was fired.

• Journal of the Korean Vacuum Society
• /
• v.22 no.5
• /
• pp.270-275
• /
• 2013

Single-layer graphene layers have been synthesized by using chemical vapor deposition, subsequently transferred on 300 nm $SiO_2/Si$ and quartz substrates, and doped with $AuCl_3$ by spin coating for various doping concentrations ($n_D$) from 1 to 10 mM. Based on the $n_D$-dependent variations of Raman frequencies/peak-intensity ratios, sheet resistance, work function, and Dirac point, measured by structural, optical, and electrical analysis techniques, the p-type nature of graphene is shown to be strengthened with increasing $n_D$. Especially, as estimated from the drain current-gate voltage curves of graphene field effect transistors, the hole mobility is very little varied with increasing $n_D$, in strong contrast with the $n_D$-dependent large variation of electron mobility. These results suggest that $AuCl_3$ is one of the best p-type dopants for graphene and is promising for device applications of the doped graphene.

• Journal of Conservation Science
• /
• v.36 no.3
• /
• pp.162-177
• /
• 2020

Research was conducted to characterize the copper production and smelting process with 11 copper smelting by-products (copper slag and copper crucible) excavated from the NA and LA areas at the Gwanbuk-ri archeological site in Buyeo. Scanning electron microscopy-energy dispersive spectroscopy, wavelength dispersive X-ray fluorescence, X-ray diffraction, and Raman microspectroscopy were employed in the analysis. The research results reveal that the copper slag from Gwanbuk-ri contained silicate oxide, magnetite, fayalite, and delafossite, which are typical characteristics of crucible slag and refined slag. The outward appearance and microstructure of the slag were grouped as follows: 1. glassy matrix + Cu prill, 2. glassy matrix + Cu prill + magnetite, 3. silicate mineral matrix + Cu prill, 4. crystalline (delafossite and magnetite) + amorphous (Cu prill), 5. magnetite + fayalite, and 6. slag from slag. The copper slags from Guanbuk-ri were found to contain residues of impurities such as SiO₂, Al₂O₃, CaO, SO₄, P₂O₅, Ag₂O, and Sb₂O₃ in their microstructure, and, in some cases, it was confirmed that copper, tin and lead are alloys. These results indicate that refining of intermediate copper(including impurities) and refining of alloys of copper(including impurities) - tin and refining of copper(including impurities) - tin - lead took place during the copper production process at Gwanbuk-ri, Buyeo.

• Applied Chemistry for Engineering
• /
• v.28 no.6
• /
• pp.705-713
• /
• 2017

A novel material, $Bi_2WO_6-GO-TiO_2$ composite, was successfully synthesized using a facile hydrothermal method. During the hydrothermal reaction, the loading of $Bi_2WO_6$ and $TiO_2$ nanoparticles onto graphene sheets was achieved. The obtained $Bi_2WO_{6-GO-TiO2}$ composite photo-catalysts were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, transmission electron microscopy (TEM), Raman spectroscopy, ultraviolet-visible diffuse reflectance spectroscopy (UV-vis-DRS), and X-ray photoelectron spectroscopy (XPS). The $Bi_2WO_6$ nanoparticle showed an irregular dark-square block nanoplate shape, while $TiO_2$ nanoparticles covered the surface of the graphene sheets with a quantum dot size. The degradation of rhodamine B (RhB), methylene blue trihydrate (MB), and reactive black B (RBB) dyes in an aqueous solution with different initial amount of catalysts was observed by UV spectrophotometry after measuring the decrease in the concentration. As a result, the $Bi_2WO_6-GO-TiO_2$ composite showed good decolorization activity with MB solution under visible light. The $Bi_2WO_6-GO-TiO_2$ composite is expected to become a new potential material for decolorization activity. Photocatalytic reactions with different photocatalysts were explained by the Langmuir-Hinshelwood model and a band theory.

• Journal of the Korean Vacuum Society
• /
• v.7 no.4
• /
• pp.348-354
• /
• 1998

To investigate an influence of the thermal preheating for the substrates exerted on the heteroepilayers, the ZnTe epilayers are grown on the GaAs (100) at the substrate temperature of 450~$630^{\circ}C$ by hot wall epitaxy (HWE). For this purpose, double crystal rocking curve (DCRC) and photoluminescence (PL) are measured. The full width at half maximum of DCRC are the smallest in the ZnTe epilayers grown on the GaAs thermally etched at around both $510^{\circ}C$ and $590^{\circ}C$. However, at around $550^{\circ}C$ they increase due to the reconstruction of the atoms in the surface. And they increase due to the oxide layer at below $490^{\circ}C$ and due to the surface defects at above $610^{\circ}C$. From PL analysis, the full width at half maximum of the light hole exciton $X_{1s,th}$ and of the second-order Raman line increase at around $550^{\circ}C$. With the increasing preheating temperature, the intensities of Y-bands and of the oxygen bound exciton (OBE) peak related to an oxide layer on the GaAs surface generally decrease. From these experimental results, it's confirmed that the GaAs substrate thermally etched influences the ZnTe pilayers.

• Progress in Medical Physics
• /
• v.12 no.1
• /
• pp.1-8
• /
• 2001

Diamond thin films were synthesized by a chemical vapor deposition (CVD). Raman spectrum showed the diamond line at 1332 $cm^{-1}$ / and x-ray diffraction pattern exhibited a strong (111) peak of diamond. The scanning electron microscopy analysis showed that the CVD diamond thin film was grown to be unepitaxial crystallites with pyramidal hillocks. A wavelength-resolved thermoluminescence (TL) of the CVD diamond thin film irradiated with X-rays showed one peak at 430 nm around 560 K. The glow curve of the CVD diamond thin film produced one dominant 560-K peak that was caused by first-order kinetics. Its activation energy and the escape frequency were calculated to be 0.92 ～ 1.05 eV and 1.34 $\times$ 10$^{7}$ sec$^{-1}$ , respectively. The emission spectrum at 560 K was split into 1.63-eV, 2.60-eV, and 3.07-eV emission bands which is known to be attribute to silicon-vacancy center, A center, and H3 center, respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.155.2-155.2
• /
• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Korean Chemical Engineering Research
• /
• v.61 no.2
• /
• pp.296-301
• /
• 2023

Solid oxide fuel cell has received more attention recently due to the fuel flexibility via internal reforming. Commonly used Ni/YSZ anode, however, can be easily deactivated by carbon coking in hydrocarbon fuels. The carbon deposition problem can minimize by developing alternative perovskite anode. This study is focused on improving conductivity and catalytic activity of the perovskite anode by introducing rGO (reduced graphene oxide). Sr_0.92Y_0.08TiO₃(SYT) anode with perovskite structure was synthesized with 1wt% of rGO. The presence of rGO during anode fabricating process and cell operation is confirmed through XPS and Raman analysis. The maximum power density of rGO/SYT anode improved to 3 times in H₂ and 6 times in CH₄ comparing to that of SYT anode due to the high electrical conductivity and good catalytic activity for CH₄.

• Composites Research
• /
• v.37 no.3
• /
• pp.162-169
• /
• 2024

In this study, PAN(polyacrylonitrile)-based precursor fibers were produced through a wet-spinning process, and their morphologies and graphitization behavior were investigated in the presence of two graphitization catalysts (Ca, Ni). The graphitization catalysts were introduced into the formed pores during hot-water stretching of wet-spun PAN-based precursor fibers. The catalytic effects of graphitization catalysts were examined through crystal structure and Raman analysis. At a relatively low temperature of 1500℃, the graphitization was not significantly affected, whereas at a high temperature of 2400℃, the obtained I_D/I_G value of graphite fiber (GF-Ni100) was decreased by about twice (~0.28) compared to the untreated fibers (GF-AS~0.54). By comparing the I_D/I_G values (GF-Ca100~0.42: GF-Ni100~0.28) of Ca and Ni graphitization catalyst, it was found that the degree of graphitization of Ni graphitization catalyst showed higher influence than that of Ca graphitization catalyst. Moreover, 2D band was also observed, indicating that the graphite plane structures composed of multiple layers were developed. XRD results confirmed that the crystal inter-planar distance (d₀₀₂) of the graphite crystal was slightly decreased after the treatment with the graphitization catalyst, But, the crystal size of Ca-treated graphite fiber (GF-Ca100) was increased by up to ~5 nm.