• Bulletin of the Korean Chemical Society
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• v.11 no.5
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• pp.460-463
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• 1990

The normal and fluorinated high-Tc superconducting materials, $YBa_2Cu_3O_{7-x}F_y$with $0.25{\leq}x{\leq}0.55\;and\;0.00{\leq}y{\leq}0.30$, were synthesized to investigate the dopping effect of fluorine atom on the superconductivity of Y123 and studied by X-ray diffraction analysis and electron probe microanalysis, resistivity and thermopower measurements, and polarized micro-Raman spectroscopy. The reproducible micro-Raman spectra were recorded and analyzed. The coherent assignments could be suggested for the spectra of normal and fluorinated samples. The fluorine atoms introduced were found to be substituted for oxygen in pyramidal Cu-O units rather than in Cu-O chains. The unit cell parameters were decreased upon the substitution of oxygen by fluorine atom. From the decreasing cell parameters and Tc, the increasing thermopower, and the possible assignments of the vibrational modes, it could be suggested that the dopping of fluorine atom localizes the superconducting electrons in Y123.

• Journal of the Korean Physical Society
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• v.80
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• pp.1035-1041
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• 2022

Nondestructive nano-characterization methods were reviewed with respect to technical aspect and practicability. Micro-photoluminescence, cathodoluminscence and Raman spectroscopy with mapping modes were investigated as optical characterization tools, while electron backscatter diffraction and piezoresponse force microscopy were introduced as monitoring techniques for the crystallographic and electromechanical properties. Especially, the spatial resolution of the data acquisition and analysis was carefully inspected in the representative semiconducting nanomaterial systems. Some of efforts to overcome the limit of these characterizations were also taken into consideration.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.182-190
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• 2005

The fiber Raman amplifier(FRA) is a distinctly advantageous technology. Due to its wider, flexible gain bandwidth, and intrinsically lower noise characteristics, FRA has become an indispensable technology of today. Various FRA modeling methods, with different levels of convergence speed and accuracy, have been proposed in order to gain valuable insights for the FRA dynamics and optimum design before real implementation. Still, all these approaches share the common platform of coupled ordinary differential equations(ODE) for the Raman equation set that must be solved along the long length of fiber propagation axis. The ODE platform has classically set the bar for achievable convergence speed, resulting exhaustive calculation efforts. In this work, we propose an alternative, highly efficient framework for FRA analysis. In treating the Raman gain as the perturbation factor in an adiabatic process, we achieved implementation of the algorithm by deriving a recursive relation for the integrals of power inside fiber with the effective length and by constructing a matrix formalism for the solution of the given FRA problem. Finally, by adiabatically turning on the Raman process in the fiber as increasing the order of iterations, the FRA solution can be obtained along the iteration axis for the whole length of fiber rather than along the fiber propagation axis, enabling faster convergence speed, at the equivalent accuracy achievable with the methods based on coupled ODEs. Performance comparison in all co-, counter-, bi-directionally pumped multi-channel FRA shows more than 102 times faster with the convergence speed of the Average power method at the same level of accuracy(relative deviation < 0.03dB).

• Proceedings of the Optical Society of Korea Conference
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• 1991.07a
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• pp.9-14
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• 1991

질소 기체의 코헤런트 반 스톡스 신호를 상자형 위상전합 방식으로 측정하였으며, 이 신호로부터 온도 및 밀도를 구하기 질소 기체의 코헤런트 라만 신호를 섭동이론을 이용하여 계산하였다.

• Bulletin of the Korean Chemical Society
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• v.32 no.2
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• pp.713-715
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• 2011

• Polymer Science and Technology
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• v.26 no.1
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• pp.56-60
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• 2015

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.59-59
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• 2010

Graphene is a 2-D sheet of $sp^2$-bonded carbon arranged in a honeycomb lattice. This material has attracted major interest, and there are many ongoing efforts in developing graphene devices because of its high charge mobility and crystal quality. Therefore clear understanding of the substrate effect and mechanism of synthesis of graphene is important for potential applications and device fabrication of graphene. In a published paper in J. Phys. Chem. C (2008), the effect of substrate on the atomic/electronic structures of graphene is negligible for graphene made by mechanical cleavage. However, nobody shows the interaction between Ni substrate and graphene. Therefore, we have studied this interaction. In order to studying these effect between graphene and Ni substrate, We have observed graphene synthesized on Ni substrate and graphene transferred on $SiO_2$/Si substrate through Raman spectroscopy. Because Raman spectroscopy has historically been used to probe structural and electronic characteristics of graphite materials, providing useful information on the defects (D-band), in-plane vibration of sp2 carbon atoms (G-band), as well as the stacking orders (2D-band), we selected this as analysis tool. In our study, we could not observe the doping effect between graphene and Ni substrate or between graphene and $SiO_2$/Si substrate because the shift of G band in Raman spectrum was not occurred by charge transfer. We could noticed that the bonding force between graphene and Ni substrate is more strong than Van de Waals force which is the interaction between graphene and $SiO_2$/Si. Furthermore, the synthesized graphene on Ni substrate was in compressive strain. This phenomenon was observed by 2D band blue-shift in Raman spectrum. And, we consider that the graphene is incommensurate growth with Ni polycrystalline substrate.

• Journal of the Optical Society of Korea
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• v.10 no.3
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• pp.130-142
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• 2006

Lab-on-a-chip technology is attracting great interest because the miniaturization of reaction systems offers practical advantages over classical bench-top chemical systems. Rapid mixing of the fluids flowing through a microchannel is very important for various applications of microfluidic systems. In addition, highly sensitive on-chip detection techniques are essential for the in situ monitoring of chemical reactions because the detection volume in a channel is extremely small. Recently, a confocal surface enhanced Raman spectroscopic (SERS) technique, for the highly sensitive biological analysis in a microfluidic sensor, has been developed in our research group. Here, a highly precise quantitative measurement can be obtained if continuous flow and homogeneous mixing condition between analytes and silver nano-colloids are maintained. Recently, we also reported a new analytical method of DNA hybridization involving a PDMS microfluidic sensor using fluorescence energy transfer (FRET). This method overcomes many of the drawbacks of microarray chips, such as long hybridization times and inconvenient immobilization procedures. In this paper, our recent applications of the confocal Raman/fluorescence microscopic technology to a highly sensitive lab-on-a-chip detection will be reviewed.

• Carbon letters
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• v.14 no.2
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• pp.94-98
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• 2013

Isotropic pitch fibers were stabilized and carbonized for preparing carbon fibers. To optimize the duration and temperature during the stabilization process, a thermogravimetric analysis was conducted. Stabilized fibers were carbonized at 1000, 1500, and $2000^{\circ}C$ in a furnace under a nitrogen atmosphere. An elemental analysis confirmed that the carbon content increased with an increase in the carbonization temperature. Although short graphitic-like layers were observed with carbon fibers heat-treated at 1500 and $2000^{\circ}C$, Raman spectroscopy and X-ray diffraction revealed no significant effect of the carbonization temperature on the crystalline structure of the carbon fibers, indicating the limit of developing an ordered structure of isotropic pitch-based carbon fibers. The electrical conductivity of the carbonized fiber reached $3.9{\times}10^4$ S/m with the carbonization temperature increasing to $2000^{\circ}C$ using a four-point method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.330-333
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• 2002

The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra.