• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.249-250
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• 2012

Raman spectroscopy는 미세결정질 실리콘 박막의 분석에 널리 사용되고 있으며 특히, 측정 자료를 통해 미세결정질 분율을 알아낼 수 있다. Raman 측정 시 조사되는 laser의 특성에 따라 박막시편 측정값에 일련의 변화가 나타나는 것을 알 수 있었다.

• Korean Journal of Crystallography
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• v.5 no.1
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• pp.39-50
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• 1994

Diamond thin films were deposited on silicon, molybdebum, titanum and tugsten substrates, and were chlwntnizen using scanning electron microscopy, X-ray diffraction analysis and Raman spectroscopy. From the result of experiment in various deposition periods, it was found that found that were nucleated and grown on interlayed carbide layers, which were formed on refractory metal substrates at the initial stage of.

• Analytical Science and Technology
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• v.24 no.6
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• pp.519-526
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• 2011

Chemometrics using near-infrared (NIR) and Raman spectroscopy have found significant uses in a variety quantitative and qualitative analyses of pharmaceutical products in complex matrixes. Most of the pharmaceutical can be measured directly with little or no sample preparation using these spectroscopic methods. During pharmaceutical manufacturing process, analytical techniques with no or less sample preparation are very critical to confirm the quality. This study showed NIR and Raman spectroscopy with principal component analysis (PCA) was very effective for the blending processing control. It is of utmost importance to evaluate critical parameters related to quality of products during pharmaceutical processing. The blending is confirmed by off-line determination of active pharmaceutical ingredient (API) by a conventional method such as high performance liquid chromatography (HPLC) and UV spectroscopy. These analytical methods are time-consuming and ineffective for real time control. This study showed the possibility for the determination of blend uniformity end-point of CR tablets with the use of both NIR and Raman spectroscopy. The samples were acquired from six positions during blending processing with U-type blender from 0 to 30 min. Using both collected NIR and Raman spectral data, principal component analysis (PCA) was used to follow the uniformity of blending and finally determine the end-point. The variation of homogeneity of six samples during blending was clearly found and blend uniformity end-point was successfully confirmed in the domains of principal component (PC) scores.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.151-152
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• 2012

라만(Raman) 분광법은 실리콘의 결정화도를 분석하는데 가장 유용하게 쓰이는 기법이다. 본 논문에서는 상압 플라즈마 화학기상증착법 (atmospheric pressure plasma-enhanced chemical vapor deposition, AP-PECVD)에 의해 형성된 실리콘 박막의 결정화도를 라만 분광법에 의해 분석하였다. 라만 분석 시, 조사하는 레이져의 파장에 따라서 실리콘 박막 내로의 침투깊이가 결정된다. 또한 레이져의 파워가 임계점을 넘게 되면, 레이져에 의한 실리콘의 결정화가 진행되는 것을 확인하였다.

• Korean Journal of Optics and Photonics
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• v.33 no.6
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• pp.331-337
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• 2022

Raman spectroscopy is an optical technique that can identify molecules in a label-free manner, and is therefore heavily investigated in various areas ranging from biomedical engineering to materials science. Probe-based Raman spectroscopy can perform minimally invasive chemical analysis, and thus has potential as a real-time diagnostic tool during surgery. In this study, Raman experimentation was calibrated by examining the Raman shifts with respect to the concentrations of chemical substances. Raman signal characteristics, targeted for normal mice and cerebral tissues of the 5xFAD dementia mutant model with accumulated amyloid beta plaques, were measured and analyzed to explore the possibility of diagnosis of Alzheimer's disease. The application to the diagnosis of dementia was cross-validated by measuring Raman signals of amyloid beta. The results suggest the potential of Raman spectroscopy as a diagnostic tool that may be useful in various areas of application.

• Korean Journal of Optics and Photonics
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• v.10 no.2
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• pp.89-94
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• 1999

The 1.54 ${\mu}{\textrm}{m}$ forward and backward stimulated Raman scattering (SRS) have been studied in CH$_4$pumped by 1.06 ${\mu}{\textrm}{m}$ Nd:YAG laser. The forward and backward SRS output energy in a single pass were measured at dufferent CH$_4$pressures. Under steady state conditions, the pump input threshold energies and Raman gains in forward and backward directions were for Raman conversion at various CH$_4$pressures for a tight focusing geometry. The forward and backward slope efficiency for Raman conversion were 18% and 34% respectively. The pump input threshold energy of the backward SRS was lower than that of the forward. In backward SRS, the experimental input laser threshold and Raman gain values were in good agreement with the calculated values at different pressures of CH$_4$. The retio of the backward to the forward SRS gain was appoximately 1.4 times above 1200 psi. We obtained that the backward Raman gain coefficient was 0.32 cm/GW, and the forward Raman gain coefficient 0.23cm/GW at 1400 psi. Asymmetry of the forward and backward Raman gain is caused by the interaction between different pump intensities of each direction duting the amplification of the Stokers. The backward Raman gain is proportional to the average pump intensity. However, the forward SRS output grows by depleting the local pump intensity.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.1425-1426
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• 2013

• Analytical Science and Technology
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• v.8 no.3
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• pp.313-319
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• 1995

Surface-enhanced Raman scattering(SERS) spectroscopy was employed to analyze the genotoxic nucleobase adducts of benzo[a]pyrene(BP) formed through one-electron oxidation pathway. SERS spectroscopy provided sufficient resolution to distinguish if BP intermediate was bound to different nucleobases(e. g. adenine or guanine). Furthermore, SERS specroscopy was also able to detect the difference in the binding position of the adduct to the various sites of the nucleobase. The linearity of the calibration curve for N7Ade-BP ranged from 20 picogram to 800 nanogram per microliter and the detection limit under the current conditions was determined 20 picogram per microliter in a solution volume of 20 microliter.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.99-99
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• 2011

마그네트론 스퍼터 법으로 Al2O3 기판 위에 ZnO 박막을 성장하여 열처리 온도에 따른 광학적 특성 변화를 Raman 분광법 및 photoluminescence (PL) 분광법으로 분석하였다. 박막 성장시 기판의 온도는 $500^{\circ}C$를 유지하였고, 성장된 시료에 대한 열처리는 $600^{\circ}{\sim}900^{\circ}C$의 구간에서 3분간 실행하였다. Raman 측정결과 열처리 전후 모든 시료에서 wurtzite nonpolar ZnO의 전형적인 특징인 A1-LO mode와 E2-low mode 및 E2-high mode가 관측되었다. 또한 열처리 온도 변화에 따른 Raman 피크의 이동은 보이지 않았다. 이로 미루어 본 연구에서 제작된 ZnO는 우수한 결정성을 갖고 있으며, 열처리에 의한 변형이 일어나지 않았음을 알 수 있었다. PL 측정 결과 열처리 전의 저온 발광 특성은 잘 분해되지 않는 밴드단 발광이 미약하게 나타났다. 그러나 열처리 온도가 증가함에 따라 exciton 피크가 잘 분리되면서 그 세기도 점차 증가하는 것을 알 수 있었다. Hall 측정 결과와 비교해 볼 때 열처리 온도가 증가 할수록 박막내 native defect가 열처리에 의해 감소되면서 전기적/광학적 특성이 향상되는 것으로 분석된다.

• Korean Journal of Optics and Photonics
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• v.24 no.3
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• pp.143-147
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• 2013

A Raman spectrometer is essential for analyzing the characteristics of graphene. The commercial micro-Raman spectrometer is useful for measuring small areas, but due to the small measuring area, it has limited use in industry, as a sampling measure. This paper suggests a Raman spectrometer able to get a large area image of graphene. By using this image, we can get information on defects and on the presence of graphene. Therefore, this equipment can be used for quality assessment for production of graphene.