• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.12
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• pp.1388-1398
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• 2012

SAR(Synthetic Aperture Radar) systems can provide images of wide coverage in day, night, and all-weather conditions. However wideband SAR systems are known to be vulnerable to interferences from other devices operating at in-band or adjacent spectrums and this may lead to image corruptions. In this paper, a SAR point target simulator is developed that provides performance analysis on image distortion caused by interferences from other devices. Interference signals are generated based on the experimental data observed from acquired SAR raw data. Simulation results include typical SAR performance measures such as spatial resolution, peak to sidelobe ratio and integrated sidelobe ratio. Finally, SAR target simulations are performed and shown to correspond to the image corruptions found in real SAR missions affected by RF interferences.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.344-348
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• 2011

A layer of $TiO_2$ thin film less than ~200nm in thickness, as a blocking layer, was deposited by 13.56 MHz radio frequency magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/{I_3}^-$). The presented DSCs were fabricated with working electrode of F:$SnO_2$(FTO) glass coated with blocking $TiO_2$ layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited FTO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells. The, electrochemical impedances of DSCs using this electrode were $R_1$: 13.9, $R_2$: 15.0, $R_3$: 10.9 and $R_h$: $82{\Omega}$. The $R_2$ impedance related by electron movement from nanoporous $TiO_2$ to TCO showed lower than that of normal DSCs. The photo-conversion efficiency of prepared DSCs was 5.97% ($V_{oc}$: 0.75V, $J_{sc}$: 10.5 mA/$cm^2$, ff: 0.75) and approximately 1% higher than general DSCs sample.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37A no.12
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• pp.1013-1022
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• 2012

Tag collection is one of the major concerns in radio frequency identification(RFID) system. All tags in RFID reader's transmission range send response message back to the reader in response to collection request message on the given rf channel. When multiple tags respond simultaneously, tag-collision may occur. Tag-collision problem is one of the most important issues in active RFID performance. To mitigate this problem, frame slotted ALOHA(FSA) anti-collision protocol is widely used in active RFID system. Several studies show that the maximum system efficiency of FSA anti-collision protocol is 36.8%. In this paper, we propose an efficient slotted CSMA/CA protocol to improve tag collection performance. We compare our protocol to the FSA anti-collision protocol. For the experiment, an 433MHz active RFID system is implemented, which is composed of an RFID reader and multiple tags. We evaluated the tag collection performance using one RFID reader and 40 tags in the real test bed. The experimental result shows that proposed protocol improves the tag collection time, round and collision probability by 18%, 37.4% and 77.8%, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.379-384
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• 2015

An infrared image sensor is a core device in a thermal imaging system. The fabrication method of a focal plane array (FPA) is a key technology for a high resolution infrared image sensor. Each pixels in the FPA have $Si_3N_4/SiO_2$ membranes including legs to deposit bolometric materials and electrodes on Si readout circuits (ROIC). Instead of polyimide used to form a sacrificial layer, the feasibility of an amorphous silicon (${\alpha}-Si$) was verified experimentally in a $8{\times}8$ micro-bolometer array with a $50{\mu}m$ pitch. The elimination of the polyimide sacrificial layer hardened by a following plasma assisted deposition process is sometimes far from perfect, and thus requires longer plasma ashing times leading to the deformation of the membrane and leg. Since the amorphous Si could be removed in $XeF_2$ gas at room temperature, however, the fabricated micro-bolomertic structure was not damaged seriously. A radio frequency (RF) sputtered nickel oxide film was grown on a $Si_3N_4/SiO_2$ membrane fabricated using a low stress silicon nitride (LSSiN) technology with a LPCVD system. The deformation of the membrane was effectively reduced by a combining the ${\alpha}-Si$ and LSSiN process for a nickel oxide micro-bolometer.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.450-450
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• 2006

Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.195-199
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• 2011

ITO thin films and gold (Au), copper (Cu) and nickel (Ni) intermediate ITO multilayer (ITO/Au/ITO, ITO/Cu/ITO, ITO/Ni/ITO) films were deposited on glass substrates with a reactive radio frequency and direct current magnetron sputtering system and then the effect of intermediate metal layer and annealing temperature on the methanol gas sensitivity of ITO films were investigated. Although both ITO and ITO/metal/ITO (IMI) film sensors have the same total thickness of 100 nm, IMI sensors have a sandwich structure of ITO 50 nm/metal 10 nm/ITO 40 nm. The change in the gas sensitivity of the film sensors caused by methanol gas ranging from 100 to 1000 ppm was measured at room temperature. The IAI film sensors showed the higher sensitivity than the other sensors. Finally, it is concluded that the ITO 50/Au 10/ITO 40 nm film sensors hasthe potential to be used as improved methanol gas sensor.

• Smart Structures and Systems
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• v.6 no.5_6
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• pp.579-593
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• 2010

Low-power radio frequency (RF) chip transceiver technology and the associated structural health monitoring platforms have matured recently to enable high-rate, lossless transmission of measurement data across large-scale sensor networks. The intrinsic value of these advanced capabilities is the allowance for high-quality, rapid operational modal analysis of in-service structures using distributed accelerometers to experimentally characterize the dynamic response. From the analysis afforded through these dynamic data sets, structural identification techniques can then be utilized to develop a well calibrated finite element (FE) model of the structure for baseline development, extended analytical structural evaluation, and load response assessment. This paper presents a case study in which operational modal analysis is performed on a three-span prestressed reinforced concrete bridge using a wireless sensor network. The low-power wireless platform deployed supported a high-rate, lossless transmission protocol enabling real-time remote acquisition of the vibration response as recorded by twenty-nine accelerometers at a 256 Sps sampling rate. Several instrumentation layouts were utilized to assess the global multi-span response using a stationary sensor array as well as the spatially refined response of a single span using roving sensors and reference-based techniques. Subsequent structural identification using FE modeling and iterative updating through comparison with the experimental analysis is then documented to demonstrate the inherent value in dynamic response measurement across structural systems using high-rate wireless sensor networks.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.2
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• pp.74-78
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• 2019

$Zn_2SnO_4$ thin films were deposited on quartzs substrates by using radio-frequency magnetron sputtering system. Thermal treatments at various temperatures were performed to evaluate the effect of annealing temperatures on the properties of $Zn_2SnO_4$ thin films. Surface morphologies were examined by using field emission-scanning electron microscopy and showed that sizes of grains were slightly increased and grain boundaries were clear with increasing annealing temperatures. The deposited $Zn_2SnO_4$ thin films on quartzs substrates were amorphous structures and no distinguishable crystallographic changes were observed with variations of annealing temperatures. The optical transmittance was improved with increasing annealing temperatures and was over 90% in the wavelength region between 350 and 1100 nm at the annealing temperature of $600^{\circ}C$. The optical energy bandgaps, which derived from the absorbance of $Zn_2SnO_4$ thin films, were increased from 3.34 eV to 3.43 eV at the annealing temperatures of $450^{\circ}C$ and $600^{\circ}C$, respectively. As the annealing temperature was increased, the electron concentrations were decreased. The electron mobility was decreased and resistivity was increased with increasing annealing temperatures with exception of $450^{\circ}C$. These results indicate that heat treatments at higher annealing temperatures improve the optical and electrical properties of rf-sputtered $Zn_2SnO_4$ thin films.