• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.6
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• pp.50-57
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• 2009

In this paper, a deep-heating stimulation system and protocol were designed to substitute the heat effect of moxibustion. Moxibustion is used to increase immunity and cure disease. But, it is difficult to control power of heat stimulation. A designed deep-heating stimulation system using Radio-Frequency(RF) is easy to control power of heat stimulation. Also, the stimulation protocol for substitution of the heat effect of moxibustion is proposed. Core temperature was applied to infrared camera, thermometer, and infrared sensor, and then was compared with that of moxibustion. The proposed system showed that it is more effective than moxibustion in transferring heat effect in such a deep part. Also, it shows the possibility of usefulness of deep-heating stimulation system and heat stimulation protocol.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.287-292
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• 2010

We have investigated the effects of oxygen flow ratios on the structural, morphological, and optical properties of AlN thin films grown by using radio-frequency reactive magnetron sputtering. The AlN thin films were deposited at $300^{\circ}C$ of substrate temperature, and the reactive gas were supplied with both nitrogen and oxygen. The oxygen flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 0%, 10%, 15%, 20%, 25%, and 30%. The structural, morphological, and optical properties of the deposited AlN thin films were examined by using X-ray diffractometer, scanning electron microscopy, and ultraviolet-visible spectrophotometer. The AlN thin film grown at 10% of oxygen flow ratio indicated an average transmittance of 91.3% in the wavelength range of 350~1,100 nm and an optical band gap of 4.30 eV. The experimental results suggest that AlN thin films can be deposited optionally by varying the oxygen flow ratio.

• Journal of the Korean Society for Railway
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• v.10 no.1 s.38
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• pp.57-66
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• 2007

1974. 8. 15 SeoulMetro, beginning with the first electric railway established at six cities, so it is managing mass transportation of traffic. Especially, in case of seoul, It is managing that from one to eight lines, 286.9km, 265 stations have installed and now it is carrying about 5.5million of passengers everyday, and 2,000million passengers a year. So accident is increasing from the station every year. For this measure, SeoulMetro prepares safety fence for passengers crash but, as suicides or people who watch the accident took place, for at the bottom of passengers crash protection, PSD installing is needed. Even though, PSD is managing ATO section but, in controlling SeoulMetro, one to four lines sections are (ATS, ATC)section. Between as ATS, ATC section, ATO section, subway gate and PSD must have opened and crossed always at the time. And the interlock control corrosion protection gate, managing skills with installation, method, using in history, apply to 10rail cars one train sets, and maximum applying 2224% sections of passengers congested that consideration is to be needed. So 2004, SeoulMetro improved technology and basie design of PSD at ATS section. Based on this, from 2005.4 to 2006.6, using subway 2lines per 12stations set the model installation(full type 11stations, half type 1station) After installing in case of success, it is going about to suggest that effective analysis and hereafter subject.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.12
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• pp.1388-1398
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• 2012

SAR(Synthetic Aperture Radar) systems can provide images of wide coverage in day, night, and all-weather conditions. However wideband SAR systems are known to be vulnerable to interferences from other devices operating at in-band or adjacent spectrums and this may lead to image corruptions. In this paper, a SAR point target simulator is developed that provides performance analysis on image distortion caused by interferences from other devices. Interference signals are generated based on the experimental data observed from acquired SAR raw data. Simulation results include typical SAR performance measures such as spatial resolution, peak to sidelobe ratio and integrated sidelobe ratio. Finally, SAR target simulations are performed and shown to correspond to the image corruptions found in real SAR missions affected by RF interferences.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.344-348
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• 2011

A layer of $TiO_2$ thin film less than ~200nm in thickness, as a blocking layer, was deposited by 13.56 MHz radio frequency magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/{I_3}^-$). The presented DSCs were fabricated with working electrode of F:$SnO_2$(FTO) glass coated with blocking $TiO_2$ layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited FTO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells. The, electrochemical impedances of DSCs using this electrode were $R_1$: 13.9, $R_2$: 15.0, $R_3$: 10.9 and $R_h$: $82{\Omega}$. The $R_2$ impedance related by electron movement from nanoporous $TiO_2$ to TCO showed lower than that of normal DSCs. The photo-conversion efficiency of prepared DSCs was 5.97% ($V_{oc}$: 0.75V, $J_{sc}$: 10.5 mA/$cm^2$, ff: 0.75) and approximately 1% higher than general DSCs sample.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37A no.12
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• pp.1013-1022
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• 2012

Tag collection is one of the major concerns in radio frequency identification(RFID) system. All tags in RFID reader's transmission range send response message back to the reader in response to collection request message on the given rf channel. When multiple tags respond simultaneously, tag-collision may occur. Tag-collision problem is one of the most important issues in active RFID performance. To mitigate this problem, frame slotted ALOHA(FSA) anti-collision protocol is widely used in active RFID system. Several studies show that the maximum system efficiency of FSA anti-collision protocol is 36.8%. In this paper, we propose an efficient slotted CSMA/CA protocol to improve tag collection performance. We compare our protocol to the FSA anti-collision protocol. For the experiment, an 433MHz active RFID system is implemented, which is composed of an RFID reader and multiple tags. We evaluated the tag collection performance using one RFID reader and 40 tags in the real test bed. The experimental result shows that proposed protocol improves the tag collection time, round and collision probability by 18%, 37.4% and 77.8%, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.379-384
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• 2015

An infrared image sensor is a core device in a thermal imaging system. The fabrication method of a focal plane array (FPA) is a key technology for a high resolution infrared image sensor. Each pixels in the FPA have $Si_3N_4/SiO_2$ membranes including legs to deposit bolometric materials and electrodes on Si readout circuits (ROIC). Instead of polyimide used to form a sacrificial layer, the feasibility of an amorphous silicon (${\alpha}-Si$) was verified experimentally in a $8{\times}8$ micro-bolometer array with a $50{\mu}m$ pitch. The elimination of the polyimide sacrificial layer hardened by a following plasma assisted deposition process is sometimes far from perfect, and thus requires longer plasma ashing times leading to the deformation of the membrane and leg. Since the amorphous Si could be removed in $XeF_2$ gas at room temperature, however, the fabricated micro-bolomertic structure was not damaged seriously. A radio frequency (RF) sputtered nickel oxide film was grown on a $Si_3N_4/SiO_2$ membrane fabricated using a low stress silicon nitride (LSSiN) technology with a LPCVD system. The deformation of the membrane was effectively reduced by a combining the ${\alpha}-Si$ and LSSiN process for a nickel oxide micro-bolometer.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.450-450
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• 2006

Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).