• 한국진공학회지
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• 제9권1호
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• pp.76-80
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• 2000

CF & $CF_2$ radicals in a $C_4F_8$ inductively coupled plasma were observed with laser induced fluorescence. 251.9nm UV laser was used for the $CF_2$ excitation and 265.3nm UV emitted light for the detection which has the maximum intensity among many induced fluorescence lights. In the case of CF radical detection, 232.9nm UV laser was used for the excitation and 247.6nm for the detection. $CF_2$ radical density increased toward substrate, while CF radical had its maximum at about 10nm away from the substrate. The atomic fluorine density which was studied by the actinometry increased as the position moves away from the substrate. This phenomena was thought to have a close relation with the polymer growth on the wafer. When the bias voltage increased, $CF_2$ , CF radicals decreased while the atomic fluorine increased tio some extent and then decreased, which was thought to be due to the change in the ionization and dissociation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.879-881
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• 1999

Radical and ion densities in a CF4 plasma have been calculated as a function of input power density. 9as pressure and feed gas flow rate using simple 0 dimensional global model. Fluorine atom is found to be the most abundant neutral particle. Highly fragmented species such as CF and CF+ become dominant neutral and ionic radical at the high power condition. As the pressure increases. ion density increases but ionization rate decreases due to the decrease in electron temperature. The fractional dissociation of CF4 feed gas decreases with pressure after increasing at the low pressure range. Electron density and temperature are almost independent of flow rate within calculation conditions studied. The fractional dissociation of CF4 monotonically decreases with flow rate. which results in increase in CF3 and decrease in CF density. The calculation results show that the SiO2 etch selectivity improvement correlates to the increase in the relative density of fluorocarbon ion and neutral radicals which has high C/F ratio.

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.159-162
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• 1997

Diamond was uniformly nucleated on large area Si(001) substrate (3cm$\times$4cm) using the low pressure magnetoactive microwave plasma chemical vapor deposition. $CH_4/He$ gas mixture was used as source gas in order to obtain high radical density in the nucleation enhancement step. $CH_3$radical density was measured by means of infrared laser absorption spectroscopy. The effect of substrate bias voltage on diamond nucleation was examined. The results showed that a suitable positive bias voltage appled to the substrate with respect to the chamber could enhance diamond nucleation while a negative bias voltages leaded to deposition of only non-diamond phase carbon.

• 동의생리병리학회지
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• 제23권4호
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• pp.872-882
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• 2009

Sachil-Tang (SCT) has been traditionally used as a prescription of spasm of the esophagus by stress, pectoralgia and oppressive feeling of the chest in Oriental medicine. This study was carried out to investigate the antioxidant activities of the ethanol extract of SCT and its inhibitory effect on intracellular oxidation and vascular cell adhesion molecule-1 expression in human umbilical vein endothelial cells (HUVECs) using various methods. The SCT extract showed a strong inhibitory effect on free radical generating model systems, including DPPH radical, superoxide anions, hydroxyl radical, peroxynirite and nitric oxide. Besides, the SCT extract exhibited a strong inhibitory effect on lipid peroxidation in rat liver homogenate induced by $FeCl_2$-ascorbic acid, and protected plasmid DNA against the strand breakage in a Fenton's reaction system. The SCT extract also inhibited copper-mediated oxidation of human low-density lipoprotein (LDL), and repressed relative electrophoretic mobility of LDL. Furthermore, the SCT extract protected intracellular oxidation induced by various free radical generators and inhibited expression of vascular cell adhesion molecule-1 (VCAM-1) in HUVECs. These results suggest that SCT can be an effective natural antioxidant and a possible medicine of atherosclerosis.

• 한국진공학회지
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• 제7권4호
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• pp.374-380
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• 1998

글로벌 모델을 사용하여 $CF_4$ 플라즈마 내부에서의 각 중성 및 이온 라디칼 밀도를 계산하였다. 중성 입자로서는 플루오린 원자가 가장 많고, 높은 입력 전력 조건의 경우 CF 나 $CF^+$와 같은 저 분자 해리종이 주종을 이룬다. 압력이 증가 할수록 하전 입자의 밀도는 증가하나 전자 온도의 감소로 이온화율은 감소한다. 공급 가스인 $CF_4$의 해리율은 압력에 따 라 증가한후 다시 감소하는 양상을 보인다. 전자 온도 및 밀도는 입력유량에 대해서 거의 변화가 없다. $CF_4$의 해리율은 유량 증가에 따라 선형적으로 감소하며 이는 $CF_3$의 증가와 CF의 감소로 이어진다. 식각 실험 결과와의 비교를 통해 플루오로 카본 이온종 및 높은 C/F비를 갖는 중성 라디칼의 상대적 밀도 증가가 $SiO_2$/Si식각 선택도 향상에 주요함을 알 수 있다.

• 한국식품영양학회지
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• 제17권2호
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• pp.138-146
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• 2004

본 연구는 유용식물로부터 DPPH free radical scavenger및 사람의 low density lipoprotein(LDL)의 산화에 대한 항산화 효과를 조사하기 위하여 25종의 식물로부터 메탄올로 추출하여 조사하였다. 각종 유용식물 중 항산화 활성은 우수한 달맞이꽃이 가장 높았으며 다시 메타놀로 추출하여 조사한 결과 $\alpha$-tocopherol과 항산화능이 거의 비슷하였다. 메타놀 추출물을 ethylacetate로 추출한 획분이 항산화 활성이 높았으며 ethylacetate 층 중 acidic soluble 획분을 다시 분리한 후 Sepadex LH-20 column chromatography로 추출한 결과 Fraction F-2가 전자공유능이 가장 높았다. 따라서 항산화 활성이 높은Fraction, F-2의 구조를 동정한 결과 3,4-dihydroxybenzoic acid와 3-hyoxycinnamic acid로 확인되었다.

• 제어로봇시스템학회논문지
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• 제14권4호
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• pp.365-368
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• 2008

Feasibility test for radical reactions in organic light emitting diode(OLED) has been applied on OLED consisting of hole transport layer(HTL) and electron transport layer(ETL). Organic molecules such as 4,4',-Bis[N-(1-naphthyl)-N-phenylamino] biphenyl(NPD) and 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine(m-MTDATA) are chosen for hole transport layer(HTL) and Bathocuproine(BCP) for electron transport layer(ETL) in this study. Informations on energy and shape of frontier orbitals and data on radical reactions of simple aromatics from semiconductor($TiO_2$) photocatalysis have provided basis for determining feasibility for radical reactions in OLED. The outcome of our feasibility test would be useful in designing optimum molecule for organic layer with a view to extending the lifetime of OLED.

• 한국안전학회지
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• 제20권1호
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• pp.81-86
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• 2005

This study has investigated radiation degradation of low density polyethylene(LDPE). Samples were irradiated up to 800kGy using a $Co^{60}\;\gamma-ray$ at a dose rate of 5kGy/hr in the presence of air atmosphere at room temperature. After irradiation, storing for 2 weeks, free radical measurement of LDPE has established by electron spin resonance(ESR). ESR measurement showed that free radical concentration(FRC) was increased with radiation dose and decreased with the time. The radical types showed alkyl, allyl, and peroxy radical with the irradiation, these changed to peroxy radical with the time.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.195.1-195.1
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• 2016

Currently, as Plasma application is expanded to the industrial and medical industrial, low temperature plasma applications became important. Especially in medical and biology, many researchers have studied about generated radical species in atmospheric pressure low temperature plasma directly adapted to human body. Therefore, so measurement their plasma parameter is very important work and is widely studied all around world. One of the plasma parameters is electron density and it is closely relative to radical production through the plasma source. some kinds of method to measuring the electron density are Thomson scattering spectroscopy and Millimeter-wave transmission measurement. But most methods have very expensive cost and complex configuration to composed of experiment system. We selected Michelson interferometer system which is very cheap and simple to setting up, so we tried to measuring electron density by laser interferometer with laser beam chopping module for measurement of temporal phase difference in plasma jet. To measuring electron density at atmospheric pressure Ar plasma jet, we obtained the temporal phase shift signal of interferometer. Phase difference of interferometer can occur because of change by refractive index of electron density in plasma jet. The electron density was able to estimate with this phase difference values by using physical formula about refractive index change of external electromagnetic wave in plasma. Our guiding laser used Helium-Neon laser of the centered wavelength of 632 nm. We installed chopper module which can make a 4kHz pulse laser signal at the laser front side. In this experiment, we obtained more exact synchronized phase difference between with and without plasma jet than reported data at last year. Especially, we found the phase difference between time range of discharge current. Electron density is changed from Townsend discharge's electron bombardment, so we observed the phase difference phenomenon and calculated the temporal electron density by using phase shift. In our result, we suggest that the electron density have approximately range between 1014~ 1015 cm-3 in atmospheric pressure Ar plasma jet.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.