Abstract
CF & $CF_2$ radicals in a $C_4F_8$ inductively coupled plasma were observed with laser induced fluorescence. 251.9nm UV laser was used for the $CF_2$ excitation and 265.3nm UV emitted light for the detection which has the maximum intensity among many induced fluorescence lights. In the case of CF radical detection, 232.9nm UV laser was used for the excitation and 247.6nm for the detection. $CF_2$ radical density increased toward substrate, while CF radical had its maximum at about 10nm away from the substrate. The atomic fluorine density which was studied by the actinometry increased as the position moves away from the substrate. This phenomena was thought to have a close relation with the polymer growth on the wafer. When the bias voltage increased, $CF_2$ , CF radicals decreased while the atomic fluorine increased tio some extent and then decreased, which was thought to be due to the change in the ionization and dissociation.
