• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.17-24
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• 2022

Colloidal quantum dots (QDs) have gained attention for applications in quantum dot light emitting diodes (QLEDs) due to their high photoluminescence quantum yield, narrow emission spectra, and tunable bandgap. Nevertheless, non-radiative recombination induced by electron and hole imbalance deteriorates the device efficiency and stability. To overcome the problem, researchers have been trying to enhance hole transport properties of hole transporting layers (HTL) and/or slow down the electron injection in electron transport layer (ETL). Here, we summarize two approaches: i) development of interfacial materials between QD and ETL (or HTL); ii) engineering of HTL by blending or multi-layer approaches.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.441-446
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• 2023

Electrical and optical characteristics of the GaN-based light-emitting diode (LED) with the improved multi-quantum well (MQW) structure have been studied for light source in bio-sensing systems. Novel GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN and Al_0.1GaN/GaN/In_0.2GaN/GaN/Al_0.1GaN (MQW) structures were suggested, and their radiative recombination rate, light output power, electroluminescence, and external quantum efficiency were compared with those of the conventional GaN/In_0.2GaN/GaN MQW structure using device simulation. The LED with the GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN MQW structure showed an excellent recombination rate of 5.57 × 10²⁸ cm^-3·s^-1 that was more than one order improvement over that of the conventional LED. In addition, the efficiency droop was relieved by the suggested stepped MQW structure.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.78-83
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• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.74.1-74.1
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• 2014

We study a wraping instability of a geometrically thin, non-self-gravitating disk surrounding binary supermassive black holes on a circular orbit. Such a circumbinay disk is subject to not only tidal torques due Line 8 to the binary gravitational potential but also radiative rorques due to radiation emitted from each accretion disk. We find tat a circumbinary disk initially aligned with the binary orbital plane is unstable to radiation-driven warping beyond the marginally stable warping radius, which is sensitive to both the ratio of vertical to horizontal shear viscosities and the mass-to-energy conversion efficiency. As expected, the tidal torques give no contribution to the growth of warping modes but tend to align the circumbinary disk with the orbital plane. Since the tidal torques can suppress the warping modes in the inner part of circumbinary disk, the circumbinaary disk starts to be warped at the radii larger than the marginally stable warping radius. If the warping radius is of the order of 0.1 pc, a resultant semi-major axis is estimated to be of the order of 10-2 pc to 10-4 pc for 107 Msun black hole. We also discuss the posibility that the central objects of observed warped maser disks in active galactic nuclei are binary supermassive black holes with a triple disk: two accretion disks around the individual black holes and one circumbinary disk surrounding them.

• Journal of Information Display
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• v.3 no.1
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• pp.6-10
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• 2002

We have synthesized a new green Ir(III) complex fac-tris-(3-methyl-2-phenyl pyridine)iridium(III) $Ir(mpp)_3$ and fabricated phosphorescent polymer light-emitting device using it as a triplet emissive dopant in PVK. $Ir(mpp)_3$ showed absorption centered at 388 nm corresponding to the $^1MLCT$ transition as .evidenced by its extinction coefficient of the order of $10^3{\cdot}$ From the PL and EL spectra of the $Ir(mpp)_3$ doped PVK film, the emission maximum was observed at 523 nm, due to the radiative decay from the $^3MLCT$ state to the ground state, confirming a complete energy transfer from PVK to $Ir(mpp)_3$. The methyl substitution has probably caused a red shift in the absorption and emission spectrum compared to $Ir(mpp)_3$. The device consisting of a 2 % doped PVK furnished 4.5 % external quantum efficiency at 72 $cd/m^2$ (current density of 0.45 $mA/cm^2$ and drive voltage of 13.9 V) and a peak luminance of 25,000 $cd/m^2$ at 23.4 V (494 $mA/cm^2$). This work demonstrates the impact of the presence of a methyl substituent at the 3-position of the pyridyl ring of 2-phenylpyridine on the photophysical and electroluminescence properties.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.12
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• pp.1177-1183
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• 2012

This study aims to develop a system that maximizes the radiative heat transfer from the heliostat to the receiver by using the configuration factor and a solar tracking device. As the heat transfer from the heliostat to the receiver is delivered by solar radiation, the configuration factor commonly utilized for radiation is applied to control the heliostat. Tracking the sun and calculating its position are possible by using an illuminance sensor (CdS) and Simulink. By applying optimized algorithms programmed using Simulink that maximize the configuration factors among the heliostat, receiver, and sun in real time, the solar absorption efficiency of the receiver can be maximized. Simulations were performed on how to change the angle required to control the elevation and azimuthal angle of the heliostat during the daytime with respect to various distances.

• Korean Journal of Environmental Agriculture
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• v.26 no.3
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• pp.239-245
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• 2007

The effect of ultraviolet-B (UV-B) radiation on photosynthesis was studied by the simultaneous measurements of $O_2$ evolution and chlorophyll (Chl) fluorescence in tobacco leaves. When the tobacco leaves were teated with UV-B (1 $W{\cdot}m^{-2}$), the maximal photosynthetic $O_2$, evolution (Pmax; 4.60 ${\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) at 200 ${\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) was decreased with increasing time of UV-B treatment showing 80% decline after 4 h treatment. Chl fluorescence parameters were also affected by ultraviolet-B. Fo was increased while both Fm and Fv were decreased, resulted in the decreased of photochemical efficiency of PSII (Fv/Fm). Non-radiative dissipation of absorbed light as heat as estimated as NPQ (Fm/Fm' - 1) was also decreased with increasing time of UV-B treatment while the extent of photochemical quenching (qP) was not changed. Thus, the ratio of (1-qP)/NPQ parameter was also increased with increasing time of UV-B treatment indicating PSII is under the threat of photoinhibition. The result indicate that UV-B primarily decreases the capacity to dissipate excitation energy by trans-thylakoid pH, which in turn inhibits PSII activity.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.7
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• pp.54-62
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• 2016

The most efficient system for converting heat to electricity, AMTEC (Alkali Metal Thermal-to-Electric Convertor), is a device that directly converts heat energy to electricity using an alkali metal (sodium) as the working fluid. The AMTEC consists of a low pressure chamber, high pressure chamber, BASE (Beta-Alumina Solid Electrolyte), and artery wick. The main heat loss of the AMTEC system occurs in the low pressure chamber. A high power generation rate is thought to be obtainable by using a high temperature in the BASE. Therefore, to reduce the radiation heat loss, 6 types of radiation shields were examined to reduce the radiative heat loss in the low pressure chamber. The power generation rate of the AMTEC varied depending on the shape of the radiation shield. CFD (Computational Fluid Dynamics) analyses were carried out to optimize the shape of the radiation shield. As a result, the optimum radiation shield was found to consist of a curvature formed at the vertical point, in which case the dimensionless temperature (condenser temperature/BASE temperature) is approximately 0.665 and the maximum power generated is calculated to be 17.69W. Increasing the distance beween the BASE and condenser leads to an increase in the power generated, and the power generated with the longest distance was 17.58 W. The shields with multiple holes and multiple horizontal layers showed power reduction rates of 0.91 W and 2.06 W, respectively.