• Journal of Radiation Protection and Research
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• 제44권3호
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• pp.97-102
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• 2019

Background: Dose rate meters are the most widely used, and perhaps one of the most important tools for the measurement of ionising radiation. They are often the first, or only, device available to a user for an instant check of radiation dose at a certain location. Throughout the world, radiation safety practices rely strongly on the output of these dose rate meters. But how well do we know the quality of their output? Materials and Methods: This review is based on the measurements 1,158 commercially available dose rate meters of 116 different makes and models. Expected versus the displayed dose patterns and consistency was checked at various dose rates between $5{\mu}Gy{\cdot}h^{-1}$ and $2mGy{\cdot}h^{-1}$. Samples of these meters were then selected for further investigation and were exposed to radiation sources covering photon energies from 50 keV to 1.5 MeV. The effect of detector orientation on its reading was also investigated. Rather than focusing on the angular response distribution that is often reported by the manufacturer of the device, this study focussed on the design ergonomics i.e. the angles that the operator will realistically use to measure a dose rate. Results and Discussion: This review shows the scope and boundaries of the ionising radiation dose rate estimations that are made using commonly available meters. Observations showed both inter and intra make and model variations, occasional cases of instrument failure, instrument walk away, and erroneous response. Conclusion: The results indicate the significance of selecting and maintaining suitable monitors for specific applications in radiation safety.

• Journal of Radiation Protection and Research
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• 제28권2호
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• pp.87-95
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• 2003

반도체 검출기의 p+ 층의 도핑 농도, 열처리에 의한 불순물 재분포와 절단면에서의 guard ring 효과를 전산모사하여 최적의 구조와 공전을 설계하고, MCNP코드로 방사선 반응 특성을 분석하였다. 검출기는 반도체 집적회로 공정에서 설계된 공정변수를 적용하여 격자 방향 <100>, $400{\Omega}cm$, n형, Floating-Zone 실리콘 기판에서 제작되었다. 제작된 검출기의 누설전류 밀도는 $0.7nA/cm^2/100{\mu}m$로서 전기적 특성이 우수한 것으로 나타났으며, Cs-137 감마 선원에 의한 $5mR/h{\sim}25R/h$의 조사선량률 범위에서 방사선 반응 특성은 양호한 선형성을 보였다. 본 연구에서 제안된 공정으로 제작된 PIN 반도체 검출기는 개인선량 측정에 사용될 수 있을 것이다.

• 한국의학물리학회지:의학물리
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• 제28권3호
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• pp.83-91
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• 2017

In this work, we investigated the recently proposed phase-contrast x-ray imaging (PCXI) technique, the so-called single grid-based PCXI, which has great simplicity and minimal requirements on the setup alignment. It allows for imaging of smaller features and variations in the examined sample than conventional attenuation-based x-ray imaging with lower x-ray dose. We performed a systematic simulation using a simulation platform developed by us to investigate the image characteristics. We also performed a preliminary PCXI experiment using an established a table-top setup to demonstrate the performance of the simulation platform. The system consists of an x-ray tube ($50kV_p$, 5 mAs), a focused-linear grid (200-lines/inch), and a flat-panel detector ($48-{\mu}m$ pixel size). According to our results, the simulated contrast of phase images was much enhanced, compared to that of the absorption images. The scattering length scale estimated for a given simulation condition was about 117 nm. It was very similar, at least qualitatively, to the experimental contrast, which demonstrates the performance of the simulation platform. We also found that the level of the phase gradient of oriented structures strongly depended on the orientation of the structure relative to that of linear grids.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권12호
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• pp.545-552
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• 2003

When a Si PIN diode is exposed to fast neutrons, it results in displacement damage to the Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed. Several PIN diode arrays with various thickness and cross-section area of the intrinsic layer(I layer) were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have a good linearity to neutron dose and show that the increase of thickness of I layer and the decrease of cross-section of PIN diodes improve the sensitivity. Newly developed PIN diodes with thicker I layer and various cross section, were retested and then showed the best neutron sensitivity at the condition that the I layer thickness was similar to a side length. On the basis of two test results, final discrete PIN diodes with a rectangular shape were manufactured and the characteristics as neutron detectors were analyzed through the neutron beam test using on-line electronic dosimetry system. Developed PIN diode shows a good linearity as dosimetry in the range of 0 to 1,000cGy(Tissue) and its neutron sensitivity is 13mV/cGy at constant current of 5mA, that is three times higher than that of commercially available neutron detectors. And the device shows little dependency on the orientation of the neutron beam and a considerable stability in annealing test for a long period.