• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.304.2-304.2
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• 2016

Hafnium oxide-aluminum oxide (HfO2-Al2O3) dielectric films have been fabricated by Pulsed Laser Deposition (PLD), and their properties are studied in comparison with HfO2 films. As a gate dielectric of the TFT, in spite of its high dielectric constant, HfO2 has a small energy band gap and microcrystalline structure with rough surface characteristics. When fabricated by the device, it has the drawback of generating a high leakage current. In this study, the HfAlO films was obtained by Pulsed Laser Deposition with HfO2-Al2O3 target(chemical composition of (HfO2)86wt%(Al2O3)14wt%). The characteristics of the thin Film have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The X-ray diffraction studies confirmed that the HfAlO has amorphous structure. The RMS value can be compared to the surface roughness via AFM analysis, it showed HfAlO thin Film has more lower properties than HfO2. The energy band gap (Eg) deduced by spectroscopic ellipsometer was increased. HfAlO films was expected to improved the interface quality between channel and gate insulator. Apply to an oxide thin Film Transistors, HfAlO may help improve the properties of device.

• Journal of Korean Society of Archives and Records Management
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• v.11 no.2
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• pp.189-215
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• 2011

Owing to changing work environment and increasing uncertainty, risk management in records management area is becoming more important to secure work legitimacy and to increase the value of information for future. While risk factors in traditional records management were mainly focused on the preservation function, those in current records management were directly coupled with those of overall work processes which produce, distribute, and utilize records because information technologies make the relationship between works and records closer. This study proposes a set of risk management factors and strategies in records management based on the overall risk management framework of ISO 31000. Moreover, ARMA's works areas and NIST's systems areas were applied to form the risk management processes in records management, and ISO's records management standards were used to suggest the checklists for the processes in both areas, especially with ISO TR 26122 for work processes, and ISO 16175-3 for the context of records.

• Composites Research
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• v.32 no.6
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• pp.301-306
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• 2019

Triboelectric nanogenerator (TENG) is one of the energy harvesting methods in spotlight that can convert mechanical energy into electricity. As TENGs produce high electrical output, previous studies have shown TENGs that can power small electronics independently. However, recent studies have reported limitations of TENG due to air breakdown and field emission. In this study, we developed a triboelectric nanogenerator that utilizes the metal-to-metal surface contact to induce ion-enhanced field emission and electron avalanche for electrons to flow directly between two electrodes. The average peak open-circuit voltage of this TENG was measured as 340 V, and average peak closed-circuit current was measured as 10 mA. The electrical output of this TENG has shown different value depending on the surface charge of surface charge generation layer. The TENG developed in this study have produced RMS power of 0.9 mW, which is 2.4 times higher compared to conventional TENGs. The TENG developed in this study can be utilized in charging batteries and capacitors to power portable electronics and sensors independently.