• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.67-67
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• 2011

Pulsed DC $BCl_3/SF_6$ 플라즈마를 사용하여 GaAs와 AlGaAs의 건식 식각을 연구하였다. 식각 공정 변수는 가스 유량 (50~100 % $BCl_3$ in $BCl_3/SF_6$), 펄스 파워 (450~600 V), 펄스 주파수 (100~250 KHz), 리버스 시간 (0.4~1.2 ${\mu}s$)이었다. 식각 공정 후 표면 단차 측정기 (Surface profiler)를 사용하여 표면의 단차와 거칠기를 분석하였다. 그 결과를 이용하여 식각률 (Etch rate), 표면거칠기 (Surface roughness), 식각 선택비 (Selectivity)와 같은 특성 평가를 하였다. 실험 후 주사 현미경 (FE-SEM, Field Emission Scanning Electron Microscopy)을 이용, 식각 후 시료의 단면과 표면을 관찰하였다. 실험 결과에 의하면 1) 18 sccm $BCl_3$ / 2 sccm $SF_6$, 500 V (Pulsed DC voltage), 0.7 ${\mu}s$ (Reverse time), 200 KHz (Pulsed DC frequency), 공정 압력이 100 mTorr인 조건에서 GaAs와 Al0.2Ga0.8As의 식각 선택비가 약 48:1로 우수한 결과를 나타내었다. 2) 펄스 파워 (Pulsed DC voltage), 리버스 시간(Reverse time), 펄스 주파수(Pulsed DC frequency)의 증가에 따라 각각 500~550 V, 0.7~1.0 ${\mu}s$, 그리고 200~250 KHz 구간에서 AlGaAs에 대한 GaAs의 선택비가 감소하게 되는 것을 알 수 있었다. 이는 척 (chuck)에 인가되는 전류와 파워를 증가시키고, 따라서 GaAs의 식각률이 크게 증가했지만 AlGaAs 또한 식각률이 증가하게 되면서 GaAs에 대한 식각 선택비가 감소한 것으로 생각된다. 3) 표면 단차 측정기와 주사전자현미경 사진 결과에서는 GaAs의 경우 10% $SF_6$ (18 sccm $BCl_3$ / 2 sccm $SF_6$)가 혼합된 조건에서 상당히 매끈한 표면 (RMS roughness < 1.0 nm)과 높은 식각률 (~0.35 ${\mu}m$/min), 수직의 식각 측벽 확보에서 매우 좋은 결과를 보여주었다. 또한 같은 공정 조건에서 AlGaAs는 식각이 거의 되지 않은 결과 (~0.03 ${\mu}m$/min)를 보여주었다. 위의 결과들을 종합해 볼 때 Pulsed DC $BCl_3/SF_6$ 플라즈마는 GaAs와 AlGaAs의 선택적 식각 공정에서 매우 우수한 공정 결과를 나타내었다.

• Clinical and Experimental Pediatrics
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• v.52 no.12
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• pp.1364-1369
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• 2009

Purpose : To analyze abnormal ventricular activation in childhood congenital heart disease induced by postoperative changes in ventricular volume and pressure and ventricular scar formation using signal-averaged electrocardiography (SAECG). Methods : Fifty-two patients who had undergone open heart surgery (OHS) were enrolled. Patients were divided into the following 3 groups: right ventricular volume overload (atrial septal defect, group1), left ventricular volume overload (ventricular septal defect, group2), and right ventricular pressure overload (tetralogy of Fallot, group 3). The patients were monitored by standard 12-lead ECG and SAECG before and 2 months after the operation. QRS duration, QT and QTc intervals, filtered QRS (f-QRS), high frequency low amplitude potential (HFLA), and root mean square (RMS) voltage in the terminal 40 ms of SAECG were determined. Results : In the preoperative period, group1 showed significant increase in QRS (P=0.011) compared to those of the other 2 groups. In the postoperative period, group3 showed significant increase in the QTc interval (P=0.004) compared to those in the other 2 groups. SAECG parameters showed no significant differences among the groups in the pre- or postoperative period. Of the 52 patients, 12 (23%) in the preoperative period and 21 (40%) in the postoperative period had at least 1 SAECG abnormality. The prevalence of SAECG abnormalities was significantly higher in the postoperative group 2 and group 3 (preoperative: 20% versus postoperative: 28%, P<0.001, preoperative: 14% versus postoperative: 64%, P<0.001, respectively). Conclusion : Abnormal SAECG patterns may be attributed to postoperative scars, OHS itself, and/or ventricular overload.

• Clinical and Experimental Pediatrics
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• v.50 no.5
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• pp.462-468
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• 2007

Purpose : The purpose of this study was to analyze the changes of the late potential of Signal- averaged electrocardiography (SAECG) and Electrocardiography (ECG) parameters during follow up of those who had taken surgical repair of Tetralogy of Fallot (TOF). Methods : Nine patients who had taken surgical repair of TOF since 1985 checked SAECG and standard 12 leads ECG twice in 1999 and 2005 in Kyungpook national university hospital. We evaluated changes of QRS duration, QT interval and JT interval, QRS dispersion, QT dispersion and JT dispersion of standard 12 leads ECG and Filtered QRS (f-QRS), High frequency low amplitude potential (HFLA), Root mean square in terminal 40 ms (RMS) and Mean voltage in terminal 40 ms (MV) of SAECG between in 1999 and 2005. Results : There were significant decrease of JT dispersion ($101.11{\pm}50.11$ vs $71.11{\pm}22.61ms$, P< 0.05) and significant increase of HFLA ($24.67{\pm}13.19$ vs $32.89{\pm}14.21ms$, P<0.05). But there were no significant changes in other parameters. Conclusion : In repaired TOF patients, we evaluated ECG and SAECG to detect possible late complications such as tricuspid regurgitation, right ventricular enlargement, ventricualar arrythmia and sudden death. And there were significant changes of ECG and SAECG in some parameters (JT dispersion, HFLA). But to see the relationships between the changes of these parameters and the long term prognosis, we need to check more patients and longer follow-up.

• Journal of the Korean Society of Radiology
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• v.10 no.8
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• pp.597-602
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• 2016

Recent clinical field utilizes the aluminium filter in order to reduce the low-energy photons. However, the usage of the filter can cause adverse effect on the image quality because of the scattered dose that is generated by X-ray hardening phenomenon. Further, usage of filter with improper thickness can be a reason of dose creep phenomenon where unnecessary exposure is generated towards the patient. In this study, the author evaluated the RMS and the RSD analysis in order to have a quantitative evaluation for the effect of forward scattering dose by the filter on the image. as a result of the study, the FSR and the RSD was increased together with the increasing of thickness of the filter. In this study the RSD means the standard deviation of the mean value is relatively size. It can be understood that the signal-to-noise ratio decreases when the average value is taken as a signal and the standard deviation is judged as a noise. The signal-to-noise ratio can understanding as index of resolution at image. Based on these findings, it was quantitatively verified that there is a correlation of the image quality with the FSR by using an additional filter. The results, a 2.5 mmAl which is as recommended by NCRP in the tube voltage of 70 kVp or more showed the 14.6% on the RSD when the filter was not in used. these results are considered able to be utilized as basic data for the study about the filter to improve the quality of the image.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.10
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• pp.80-86
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• 2014

A low-noise readout circuit is studied for 2-D capacitive microbolometer focal plane arrays (FPAs). In spite of the merits of the integration method, a simple and effective pixelwise readout circuit without integration is used for input circuit because of a small pixel size and narrow noise bandwidth. To reduce the power consumption and the kT/C noise, which is the dominant noise of the capacitive microbolometer FPAs with small capacitance, a new correlated double sampling (CDS) is used for columnwise circuit. The proposed circuit has been designed using a $0.35-{\mu}m$ 2-poly 4-metal CMOS process for a microbolometer array with a pixel size of $50{\mu}m{\times}50{\mu}m$. The proposed circuit effectively reduces the kT/C noise and the other low-frequency noise of microbolometer, and the noise characteristics of the fabricated chip have been verified by measurements. The rms noise voltage of the proposed circuit is reduced from 30 % to 55 % compared to that of the simple readout input circuit, and the noise equivalent temperature difference (NETD) of the proposed circuit is very low value of 21.5 mK.

• Composites Research
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• v.32 no.6
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• pp.301-306
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• 2019

Triboelectric nanogenerator (TENG) is one of the energy harvesting methods in spotlight that can convert mechanical energy into electricity. As TENGs produce high electrical output, previous studies have shown TENGs that can power small electronics independently. However, recent studies have reported limitations of TENG due to air breakdown and field emission. In this study, we developed a triboelectric nanogenerator that utilizes the metal-to-metal surface contact to induce ion-enhanced field emission and electron avalanche for electrons to flow directly between two electrodes. The average peak open-circuit voltage of this TENG was measured as 340 V, and average peak closed-circuit current was measured as 10 mA. The electrical output of this TENG has shown different value depending on the surface charge of surface charge generation layer. The TENG developed in this study have produced RMS power of 0.9 mW, which is 2.4 times higher compared to conventional TENGs. The TENG developed in this study can be utilized in charging batteries and capacitors to power portable electronics and sensors independently.

• Journal of Korea Foresty Energy
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• v.19 no.2
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• pp.93-101
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• 2000

Wood of Robinia pseudoacacia and bark of Populus alba$\times$P. glandulosa, Fraxinus rhynchophylla and Ulmus davidiana var. japonica were collected and extracted with acetone-water(7:3, v/v) in glass jar to examine whether its bioactive compounds exist. The concentrated extracts were fractionated with hexane, chloroform, ethylacetate and water, and then freeze-dried for column chromatography and bioactive tests. The isolated compounds were sakuranetin-5-O-$\beta$-D-glucopyranoside from Populus alba $\times$Pl glandulosa, 4--ethyoxy-(+)-leucorobinetinidin frm R. pseudoacacia and fraxetion from F. rhynchophylla and were characterized by $^1H$ and$^{13}C $ NMR and positive FAB-MS. Decay-resistant activity was expressed by weight loss ratio and hyphae growth inhibition in the wood dust agar medium inoculated wood rot fungi. R. pseudoacacia showed best anti-decaying property in both test and its methanol untreated samples, indicating higher activity than methanol treated samples in hyphae grwoth test. In antioxidative test, $\alpha$-tocopherol, one of natural antioxidants, and BHT, one of synthetic antioxidants, were used as references to cmpare with the antioxidant activities of the extacted fractions. Ethylacetate fraction of F. rhynchophylla bark indicated the hightest activity in this test and all fractions of R. pseudiacacia extractives also indicated higher activities compared with the other fractions. In the isolated compounds, aesculetin isolated from F. rhynchophylla bark showed best activity and followed by robonetinidin from R. pseudoacaica.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.