• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.450-453
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• 2020

In this study, ZnO:Ga thin films were fabricated on a glass substrate using various Ar flows by an RF magnetron sputter system at room temperature. The dependencies of Ar flow on different properties were investigated. An appropriate control over the Ar flow led to the formation of a high-quality thin film. The ZnO:Ga films were formed as a hexagonal wurtzite structure with high (002) preferential orientation. The films exhibited a typical columnar microstructure and a smooth top face. The average transmittance was 85~89% within the visible area. By decreasing the Ar flow, the sheet resistance was decreased due to an increase in the grain size and a decrease in the root mean square roughness. The lowest sheet resistance of 86 Ω/□ was obtained at room temperature for the 40 sccm Ar flow.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.218-223
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• 1999

We investigated the interfacial reactions between the $Y_2O_3$ film deposited by ICB processing and p-type (100) Si substrates upon annealing treatments in $O_2$ and Ar gas ambients. we also investigated the evolution of surface morphology of ICB deposited $Y_2O_3$ films upon annealing treatments. We observed that the root-mean-square(RMS) value of surface roughness measured by AFM increased with annealing time at $800^{\circ}C$ in $O_2$ ambient, while the change of surface roughness was not observed in Ar ambient. We also found the growth of $SiO_2$ layer and the formation of yttium silicate layer. From the capacitance values $(C_{acc})$ measured by C-V measurements, the relative didldctric constant of $Y_2O_3$ film in metal-insulator-semiconductor(MIS) structure was estimated to be about 9.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.890-897
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• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1993.10a
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• pp.106-111
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• 1993

This experimental study mainly deal with the single and multi-insert cutting characteristics using coated tool. Because metal cutting of the single and multi-insert has a large relation to the improvement of productivity, the economic cutting process can be achieved by the analysis of proper metal cutting mechanism. Therefore, machining characteristics of face milling in this paper has been studied by investigating the role of different insert number which is concerned with mean cutting force, the RMS values of AE(acoustic emission) signal, tool life and surface roughness in milling SS 41 and SUS 304.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.04a
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• pp.422-427
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• 2003

Sapphire have been ground by the ultra-precision surface grinder having a glass -ceramic spindle of extremely-low thermal expansion with various cup-type resinoid-bonded diamond wheels of #400-#3000 in grain size. Sapphire can be ground in the ductile mode. And also, the surface roughness and grinding conditions has been clarified. The smooth surface of Sapphire less than 1nm RMS, 1nm Ra can be obtained by the ultra-precision grinding without any polishing Process.

• 한국초전도학회:학술대회논문집
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• v.14
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• pp.92-92
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• 2004

• Macromolecular Research
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• v.10 no.5
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• pp.291-295
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• 2002

Atomic force microscopy(AFM) was used to study the polyethylene(PE) surfaces grafted and immobilized with acrylic acid by Ar plasma treatment. The topographical images and parameters including RMS roughness and Rp-v value provided an appropriate means to characterize the surfaces. The plasma grafting and immobilization method were a useful tool for the preparation of surfaces with carboxyl group. However, the plasma immobilization method turned out to have a limitation to use as a means of preparation of PE surface with specific functionalities, due to ablation effect during the Ar plasma treatment process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.205-205
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• 2009

As a p-type semiconductor NiO is potential material which can be used in many application including QD-LED. NiO films were deposited on glass substrates using rf-sputtering method. The properties of resistivity, surface roughness, etc in the NiO films were investigated at different sputtering parameters. The resistivity of $l.88{\times}10^{-2}{\sim}3.71{\times}10^{-2}{\Omega}cm$ with sputtering power(80~200 watts) and change was very low. The sputtering pressure at 3~60 mTorr resulted in rather broad change ofresistivity of $0.58{\times}10^{-2}{\sim}4.67{\Omega}cm$. The oxygen content in sputtering gas was found to be very effective to control the resistivity from $2.01{\times}10^{-2}$ to $1.22{\times}10^2{\Omega}cm$ with 100~2.5% $O_2$ in Ar gas. In addition, the surface roughness showed the RMS values of 0.6~1.1 nm and the dependence on sputtering parameters was weak.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.6
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• pp.1146-1150
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• 2009

Cadmium telluride (CdTe) is one of the most attractive photovoltaic materials due to its low cost, high efficiency and stable performance in physical, optical and electronic properties. Few researches on the influences of uniform surface on the photovoltaic characteristics in large-area CdTe solar cell were not reported. As the preceding study of the effects of thickness-uniformity on the photovoltaic characteristics for the large-area CdTe thin film solar cell, chemical mechanical polishing (CMP) process was investigated for an enhancement of thickness-uniformity. Removal rate of CdTe thin film was 3160 nm/min of the maximum value at the 200 $gf/cm^2$ of down force (pressure) and 60 rpm of table speed (velocity). The removal rate of CdTe thin film was more affected by the down force than the table speed which is the two main factors directly influencing on the removal rate in CMP process. RMS roughness and peak-to-valley roughness of CdTe thin film after CMP process were improved to 96.68% and 85.55%, respectively. The optimum process condition was estimated by 100 $gf/cm^2$ of down force and 60 rpm of table speed with the consideration of good removal uniformity about 5.0% as well as excellent surface roughness for the large-area CdTe solar cell.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.2 s.95
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• pp.234-243
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• 1999

Using the geometric and the vector methods, three dimensional surface texture and roughness models in flat end milling are developed. In these models, rear cutting effect on surface generation is considered along with tool run-out and tool setting error including tool tilting and eccentricity between tool center and spindle rotational center. Rear cutting is the secondary cutting of the already machined surface by the trailing cutting edge. The effects of tool geometry and tool deflection on surface roughness are also considered. For representing the surface texture more practically, three dimentional surface topography parameters such as RMS deviaiton, skewness and kurtosis are introduced and used in expressing the surface texture characteristics. Under various cutting conditions, it is confirmed that the developed models predict the real surface profile precisely. These models could contribute to the cutter design and cutting condition selection for the reduction of machining and manual finishing time.