• Current Photovoltaic Research
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• v.6 no.1
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• pp.21-26
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• 2018

Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. $Cu_2O$, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility ($100cm^2/Vs$). In spite of these various advantages, the efficiency of $Cu_2O$ based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of $Cu_2O$ solar cells can be the formation of CuO layer due to atmospheric surface oxidation of $Cu_2O$ absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on $Cu_2O$ surface. First, $Cu_2O$ absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between $80^{\circ}C$ to $140^{\circ}C$. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on $Cu_2O$ based solar cells by J-V and XPS measurements.

• The Korean Journal of Food And Nutrition
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• v.31 no.2
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• pp.301-307
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• 2018

In this study, a relatively effective process is used to sterilize Escherichia coli on the surface of micro-sized calcium citrate powder using nitrogen and argon as process gases in a low-temperature vacuum plasma treatment. The purpose of this study is to confirm and to introduce the effectiveness of homogeneous surface treatment for the sterilization of fine inorganic powder by the rotatable low-temperature RF plasma system designed by ourselves. The results of the test using 3M petrifilm showed that there were no remarkable spots in the case of the surface of plasma treated powder, whereas the untreated powder showed many blue spots, which indicating that the E. coli was alive. After 5 days, in the same samples, the blue spots were seen to be larger and darker than before, while the plasma-treated powder showed no changes. The results from FE-SEM analysis showed that the E. coli was damaged and/or destroyed by reactive species generated in the plasma space, resulting in the E. coli being sterilized. Furthermore, the sterilization effects according to the selected parameters ($N_2$ and Ar; flow rate 30 and 50 sccm) adapted in this study were mutually similar, regardless of such different process parameters, and this indicates that homogeneous treatment of powder surfaces could be more effective than conventional methods. Therefore, the plasma apparatus used in this study may be a practical method to use in a powerful sterilization process in powder-type food.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.27-28
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• 2014

투명전극이란 전기 전도도를 갖는 동시에 가시광선 영역에서 빛을 투과하는 성질을 가지는 소재이다. 일반적으로 가시광선 영역(380nm~780nm)에서 80%이상의 광 투과도를 가지며, 비저항이 $10^{-3}{\Omega}{\cdot}cm$ 이하, optical band gap 이 3.3 eV 이상인 물질을 TCO(Transparent Conducting oxide)라고 한다. 현재까지 국내의 TCO 관련 연구는 터치패널, 디스플레이, 태양전지 등 광전자분야에서 가장 널리 사용되고 있는 ITO(Sn:In2O3)에 치중되어 있으며, 관련 연구도 거의 디스플레이 맞춤형 연구개발이 주류를 이루어왔다. ITO가 전기전도성이 우수하고 동시에 가시광선 영역에서의 투과율도 80%이상으로 전기적, 광학적 특성이 우수하다는 장점을 가지고 있으나, In의 희소성으로 인한 고가격, 유독성, 접착력 문제 때문에 이를 대체하기 위해 제조원가가 ITO에 비하여 월등히 저렴하고 내화학성과 내마모성이 우수하면서도, 가시광선 영역에서의 광투과율이 80%이상으로 좋다는 $SnO_2$에 관한 연구가 활발히 진행되어 왔다. 적절한 dopant를 첨가하여 $SnO_2$자체의 높은 광학적 투과도를 유지하면서 전기전도성을 더 높일수 있고, 투명전극이 가져야 할 고온 안정성을 가지고 있으며 비독성이고 수소 플라즈마에 대한 내성이 더 클 뿐만 아니라 저온에서 성장이 가능하다. $SnO_2$의 전기 전도도를 높이기 위한 Al, In, Ga, B와 같은 3족 원소가 $SnO_2$의 n형 dopant로 널리 사용되고 있다. 그 중 Al은 반응성이 커서 박막 증착 중에 산화되기 쉬운 반면, 전기적 특성 및 광학적 특성의 향상을 이룰 수 있다. 본 연구에서는 Rf Sputtering법을 사용하여 quartz기판 위에 다층박막 형태의 투명전도막을 제작한 후, 열처리를 수행, 이에 의한 다층박막 내 계면간 상호확산 현상을 이용하여 투명 전도막의 특성변화를 관찰하였다. 박막의 구조적 특성은 XRD장비를 사용하여 분석하였으며, 전기적, 광학적 특성은 각각 표면저항기, 홀 측정 장비, 그리고 UV-VIS-NI를 사용하여 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

• Journal of Ginseng Research
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• v.40 no.1
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• pp.47-54
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• 2016

Background: The roots of Panax ginseng contain noble tetracyclic triterpenoid saponins derived from dammarenediol-II. Dammarene-type ginsenosides are classified into the protopanaxadiol (PPD) and protopanaxatriol (PPT) groups based on their triterpene aglycone structures. Two cytochrome P450 (CYP) genes (CYP716A47 and CYP716A53v2) are critical for the production of PPD and PPT aglycones, respectively. CYP716A53v2 is a protopanaxadiol 6-hydroxylase that catalyzes PPT production from PPD in P. ginseng. Methods: We constructed transgenic P. ginseng lines overexpressing or silencing (via RNA interference) the CYP716A53v2 gene and analyzed changes in their ginsenoside profiles. Result: Overexpression of CYP716A53v2 led to increased accumulation of CYP716A53v2 mRNA in all transgenic roots compared to nontransgenic roots. Conversely, silencing of CYP716A53v2 mRNA in RNAi transgenic roots resulted in reduced CYP716A53v2 transcription. HPLC analysis revealed that transgenic roots overexpressing CYP716A53v2 contained higher levels of PPT-group ginsenosides ($Rg_1$, Re, and Rf) but lower levels of PPD-group ginsenosides (Rb1, Rc, $Rb_2$, and Rd). By contrast, RNAi transgenic roots contained lower levels of PPT-group compounds and higher levels of PPD-group compounds. Conclusion: The production of PPD- and PPT-group ginsenosides can be altered by changing the expression of CYP716A53v2 in transgenic P. ginseng. The biological activities of PPD-group ginsenosides are known to differ from those of the PPT group. Thus, increasing or decreasing the levels of PPT-group ginsenosides in transgenic P. ginseng may yield new medicinal uses for transgenic P. ginseng.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.39-45
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• 1998

SrBi$_{2}$Ta$_{2}$O$_{9}$ (SBT) ferroelectric thin films for nonvolatile memory were prepared on Pt/Ti/SiO$_{2}$/Si and RuO$_{2}$/SiO$_{2}$/Si substrates by RF magnetron sputtering. The dependences of crystalline and electrical properties on the lower electrode type(Pt and RuO$_{2}$) and the annealing temperatures were investigated. SBT films regardless of their electrode types showed typeical Bi layered peroviskite crystal structures. The crystalline quality of as-deposited SBT films was improved by the rapid thermal annealing at 650.deg. C for 30 sec. The remanetn polarization of 2Pr (Pr+-Pr-) of the annealed SBT films deposited on Pt/Ti/SiO$_{2}$/Si substrates were about 11 .mu.C/cm$^{2}$ and 3 .mu.C/cm$^{2}$, respectively. The leakage currents at 3 V bias voltage were about 0.8 .mu.A/cm$^{2}$ for SBT/ Pt/Ti/SiO$_{2}$/Si and about 1 .mu.A/cm$^{2}$ for SBT/RuO$_{2}$/SiO$_{2}$/Si sample. SBT films annealed at 650 .deg. C showed no degradation in Pr values after 10$^{11}$ polarization switching cycles, indicating good fatigue properties. In addition, for SBT samples deposited on Pt/Ti/SiO$_{2}$/Si, Pr values increased to more than that of initial state, suggesting the increament of leakage current caused by repeated polarization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• Journal of IKEEE
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• v.14 no.4
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• pp.257-262
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• 2010

We design a CMOS front-end with wide variable gain and low power consumption for 5.25 GHz band. To obtain wide variable gain range, a p-type metal-oxide-semiconductor field-effect transistor (PMOS FET) in the low noise amplifier (LNA) section is connected in parallel. For a mixer, single balanced and folded structure is employed for low power consumption. Using this structure, the bias currents of the transconductance and switching stages in the mixer can be separated without using current bleeding path. The proposed front-end has a maximum gain of 33.2 dB with a variable gain range of 17 dB. The noise figure and third-order input intercept point (IIP3) are 4.8 dB and -8.5 dBm, respectively. For this operation, the proposed front-end consumes 7.1 mW at high gain mode, and 2.6 mW at low gain mode. The simulation results are performed using Cadence RF spectre with the Taiwan Semiconductor Manufacturing Company (TSMC) $0.18\;{\mu}m$ CMOS technology.)

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.37-44
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• 2004

This paper describes a new GaAs-based surface-micromachined microstrip line supported by dielectric post and air-gapped signal line with ground metal. This new type of dielectric-supported air-gapped microstripline(DAML) structure is developed using surface micromachining techniques to provide easy means of airbridge connection between the signal lines and to archive low losses at millimeter-wave frequency band with wide impedance range. Each DAMLs with the length of 5 mm are fabricated and the measured characteristics are compared with those of the conventional microstrip transmission line. These transmission lines are composed of 10 ${\mu}{\textrm}{m}$ height of signal line, post size of 10 ${\mu}{\textrm}{m}$ ${\times}$ 10 ${\mu}{\textrm}{m}$ and post height of 9 ${\mu}{\textrm}{m}$. By elevating the signal lines from the substrate using the micromachining technology, the substrate dielectric loss can be reduced Compared with of the conventional microstrip transmission line showing 7.5 dB/cm loss at 50 GHz, the loss can be reduced to 1.1 dB/cm loss at 50 GHz.

• Journal of the Korean Institute of Gas
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• v.22 no.1
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• pp.53-59
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• 2018

In Korea, The number of installed LPG Charging stations is about 2000, increasing by 26 every year. In these, about 500 charging stations are older above 15 year, accounting about 25% of total stations. About 86% of them are located in the city, which is causing serious damage if accident occurs. In this paper, we developed a duel gas sensor module and integrated control system software that can prevent and correspondence to gas leaks and fire accidents at LPG/CNG charging stations. The dual type sensor module has the function of collecting and transmitting the measured data to the sensors of methane, butane and hydrogen through RF433Mhz communication. In addition, each sensor is attached with two to improve stability and accuracy. The integrated control system software detects real-time data of the devices measured by the sensors and it send to the PC and smart phone of manager. Therefore, if accident occurs, the manager can check the status of the charging station regardless of time and place.