• Maxillofacial Plastic and Reconstructive Surgery
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• v.30 no.5
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• pp.473-479
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• 2008

Asians tend to have prominent mandibular angle. The causes of wide lower third of the facial contour are obtuse mandibular angle and hypertrophy of masseter muscles. In cases of hypertrophy of masseter muscles, conventional treatment intends to the contraction of masseter muscle. Recently, volumetric reduction of masseter muscles using botulinum toxin type A injection and radiofrequency (RF) reduction have been introduced. The use of RF energy for masseter muscle reduction is known as a safe, simple, and effective method for aesthetic lower facial contouring. The purpose of this study is to present the effects of RF reduction applied to hypertrophy of masseter muscles, to review and to encourage RF practices in oral and maxillofacial region.

• Journal of the Korean Institute of Navigation
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• v.23 no.1
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• pp.15-22
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• 1999

In this paper, ferrite-rubber composite has been studied in order to apply to RF-A-PF in a super wideband electromagnetic absorber in RF-A-PF type, which can be used for a general purpose anechoic chamber. $Ni_x - Mn_0.1 - Zn_{(1-x-0.1)}ㆍFe_2O_4$ ferrite powder has been fabricated, then, using this, 〔$Ni_x - Mn_0.1 - Zn_{(1-x-0.1)}ㆍFe_2O_4$〕-Rubber composite for RF-layer in the RF-A-PF type absorber has been fabricated and it's characteristics have been analyzed. As a result, it has been clearly shown that the 〔$Ni_x - Mn_0.1 - Zn_{(1-x-0.1)}ㆍFe_2O_4$〕-Rubber composite has excellent electromagnetic wave absorbing properties.

• Journal of the Korean Institute of Navigation
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• v.22 no.4
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• pp.69-75
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• 1998

The super wideband electromagnetic wave absorber in RF-A-PF type has been proposed, which can be used for an anechoic chamber, wall material to prevent TV ghost, etc, In this paper, $Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$ Ferrite Powder has been fabricated. Using this, then, [$Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$-Rubber composite for RF-layer in the RF-A-PF type absorber has been fabricated and its characteristics has been analyzed. As a result, it has been shown that the $Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$-Rubber composit with the quantity $_x$ of $Ni_x$ between 0.5 and 0.6 is suitable for the RF-layer in the case of which the grain size is sub-micrometer order.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.1001-1004
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• 2000

RFID system is applied to identify, locate and track people, cars, animals. In RFID system, the passive transponder without battery has some benefits than active transponder, such as no restriction in battery exchange and in battery’s life. But it needs auxiliary RF-DC conversion circuit. RF-DC conversion circuit originated from Wireless Power Transmission (WPT). In this paper, RF-DC conversion circuit consists of a microstrip patch antenna and impedance matching circuit, Cock-croft Walton circuit. And RF-DC conversion circuits have two kinds of T-type and Cross-type impedance matching circuits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.465-466
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• 2007

In electrode-less lamp, The key point in creating an efficient light source based on RF discharge is to minimize the RF power loss in the RF coupler which for Anderson's type of RF lamp is due to losses in the ferrite core. This loss depends on the particular ferrite material, its size, geometry, frequency in this kind of inductive lamp shows that the correct choice of discharge current has a crucial effect on the core loss. In this study, we measured Ferrite temperature in normal state, then analyzed electrical and optical characteristics according to ferrite shape. We were able to know that was ferrite of the antenna had relate closely with temperature and luminous of the lamp. Also we appraised temperature and electrical, optical properties during turn on the lamp.

• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.67-72
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• 2008

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.454-459
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• 2007

In this work, micro-scale, high-performance solenoid-type RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. The size of the chip inductors was $0.86{\times}0.46{\times}0.45mm^3$ and copper(Cu) wire with $27{\mu}m$ diameter was used as the coil. High frequency characteristics of the inductance(L), quality factor(Q), impedance(Z), and equivalent circuit parameters of the RE chip inductors were measured and analyzed using an RF impedance/material analyzer(HP4291B with HP16193A test fixture). It was observed that the RF chip inductors with the number of turns of 9 to 12 have the inductance of 21 to 34nH and exhibit the self-resonant frequency(SRF) of 5.7 to 3.7GHz. The SRF of inductors decreases with increasing the inductance and inductors have the quality factor of 38 to 49 in the frequency range of 900MHz to 1,7GHz.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.27-30
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• 2003

Wireless power transmission system is one of the very interesting field not only in a technical and economical point of view but also that people are still trying to realize lossless power transmission. This paper has a purpose on the efficient power transmission at the passive type ICcard by using wireless power transmission system. The most difficult but important part of the passive type RF-ID system is building the system that supplies power from Reader-antenna to IDcard-antenna. To check what is the most efficient way to deliver power depending on what kind of specifications of the power-amp in reader, antenna and antenna in IDcard is for operating IDcard circuit efficiently receiving the power from reader-antenna. For this, we used 125kHz sinewave for RF signal as a basic specification, power-amp : OP-Amp for amplifying signal and AB Class push-pull power-amp for amplifying power, loop type antenna.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.4
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• pp.237-245
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• 2002

A new type of RF MEMS switch for low voltage actuation, high broadband application and high power capability is presented. Mechanical and electromagnetic simulations of this new RF MEMS switch type are shown and the fabrication process and measurement results are given. The switching element consists of a cantilever which is fixed by a suspension spring to the ground of the coplanar line. The closing voltage is 16V. The switches exhibit low insertion loss (<0.85dB@30GHz) with good isolation (>22dB@30GHz).

• Journal of electromagnetic engineering and science
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• v.2 no.2
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• pp.124-127
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• 2002

A RF tunable bandpass filter using dielectric resonators and varactor diodes is redesigned to improve the passband flatness. Since the tunable liters are generally of narrow bandwidth and the Q value of the varactor diode is usually very low, the passband flatness is strongly deteriorated by sizeable distortion loss. To remedy this problem, we construct modified Chebyshev type filter by use of network synthesis techniques. The key of modified Chebyshev type filter is the rearrangement of the passband poles to improve the passband flatness. To maintain the constant passband bandwidth, design techniques of input/output stage and coupling windows are also applied. Experimental results show that the passband flatness can be improved by purposed method without any additional RF amplitude equalizer.