• Journal of Space Technology and Applications
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• v.1 no.3
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• pp.364-374
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• 2021

This research discusses the change in radio frequency (RF) characteristics according to the number of Gores on the deployable mesh antennas for potential micro-satellite applications. The deployable type of lightweight mesh antenna can be used for various space missions such as communication/SAR/ SIGINT. In order to implement an ideal curvature of antenna surface, sufficient number of antenna rib structures are required. However, the increase in antenna ribs affects various design factors of the antenna system, especially total system mass, complexity of deployable mechanism and reliability. In this paper, the proper number of ribs for the mesh antenna were derived by comparison of electro-magnetic (EM) simulation results of example of antenna model in accordance with the various number of ribs.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.457-459
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• 2003

A new hairpin type bandpass fille. (BPF) with novel type of resonators on Teflon substrate is designed, measured, and compared with its simulation results. The proposed filter seems to have advantages of low cost and low loss, thus being very useful for 12 GHz RF applications.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1658-1665
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• 1989

Reactor design considerations over several critical parameters for a planar type reactive ion etcher are given. The etch uniformity is taken as a principal design constraint. The characteristics of economicaly available vacuum pumping system are taken as practical design constraints. A set of theoretical conditions on the chamber geometry and on the gas delivery and vacuum system, that satisfy the design constraints, are derived from basic properties of RF glow discharge and gas dynamics. The theoretical results are applied to decide design parameters of a practical single-wafer-per-chamber planar type reactive ion etching machine.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.34-42
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• 2000

Recently, there is a growing need to develope small-size RF chip inductors operating to GHz to realize high-performance, micro-fabricated wireless communication products. For the development of high-performance RF chip inductors, however, the ferrite-based chip inductors can not be used above 300MHz due to the limitation of the permeability of this material. In this work, small-size, high-performance RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. Copper (Cu) with 40${\mu}m$ diameter was used as the coils and the chip inductor size fabricated in this work is $2.1mm{\times}1.5mm{\times}1.0mm$. The external current source was applied after bonding Cu coil leads to gold pads electro-plated on the bottom edges of a core material. The composition of core materials was measured using a EDX. High frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The developed inductors have the self-resonant frequency (SRF) of 1 to 3.5 GHz and exhibit L of 22 to 150 nH. The L of the inductors decreases with increasing the SRF. The Z of the inductors has the maximum value at the SRF and the inductors have the quality factor of 70 to 97 in the frequency range of 500 MHz to 1.5 GHz.

• Applied Chemistry for Engineering
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• v.17 no.2
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• pp.194-200
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• 2006

Titanium oxide films were deposited by the nozzle type HCP RT-MOCVD for the application of metal-oxide films. In the case of TTNB, after depositing films, films must be annealed at a proper temperature, but in the case of titanium ethoxide, titanium oxide films could be directly deposited by titanium ethoxide without general annealing. We could confirm that ratio of O to Ti in the films was about 2 : 1 at RF-power of 240 watt, distance between cathode and substrate of 3 cm, deposition time of 20 min, and ratio of Ar to $O_2$ of 1 : 1. Therefore, we could obtain the titanium oxide film deposited by the nozzle type HCP RT-MOCVD without an annealing process and could apply in the metal-oxide deposition process at a low temperature.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.131-134
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• 2005

Recently, RF systems have rapidly grown with the extension of the mobile communication service The mobile service companies are providing the satellite broadcasting and common usage are expected. Coinciding with current trend, the development of improved satellite DMB (Digital Multimedia Broadcasting) tuner is required. To improve the receiving sensitivity under the poor communication circumstance, It is necessary to design the LNA (Low Noise Amplifier) with outstanding low noise characteristic and the BPF (Bandpass Filter) to transmit only desired signal without distortion and loss. Besides high reliability, the miniaturization and lightweight are required for design of mobile terminals. In this study, we designed and fabricated DMB SIR-type BPF which operates at 2642 MHz and is embedded in the substrate using LTCC. As a result, we obtained the passband insertion loss of 2.4 dB and the passband ripple of 0.08 dB. So this DMB SIR-type BPF is applicable to RF module of a satellite DMB tuner.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.10
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• pp.1175-1180
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• 2014

In this paper, the open ring type DGS(Defected Ground Structure) resonator, applicable to MMIC(Monolithic Microwave Integrated Circuit), is proposed to improve phase noise characteristics of RF oscillator. This resonator is planar type, therefore, it easy to design miniaturrized., and takes relatively high Q value. Modeling the equivalent parameter of resonator is needed, when designing the RF oscillator with resonator. The mathematical method to solve the equivalent parameter of the resonator from the measured results of resonator is introduced in this paper. To verify the method, DGS resonator with 5.8 GHz center frequency is fabricated, for measuring characteristics and calculating the equivalent parameter. The result from this process is compared with the data of the ADS simulation, and as a result both were identical.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.1-6
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• 2011

We have developed the process of forming one body S-type cantilever probe in the recessed trench for fine-pitched MEMS probe card. The probe (cantilever beam and pyramid tip) was formed using Deep RIE etching and wet etching. The pyramid tip was formed by the wet etching using KOH and TMAH. The process of forming the curved probe was also developed by the wet etching. Therefore, the fabricated probe is applicable for the probe card for DRAM, Flash memory and RF devices tests and probe tip for IC test socket.

• Agricultural and Biosystems Engineering
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• v.2 no.2
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• pp.63-68
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• 2001

The objective of this study was to develop a real-time soil moisture meter using RF impedance. The impedance suchas capacitance and resistance (or conductance) was analyzed using parallel cylinder type capacitance probe(C-probe) and Q-meter (HP4342). The capacitance and conductance of soil increased as volumetric water content increased. The 5 MHz of modified Colpitts type crystal oscillator was designed to detect the capacitance change of the C-probe with moist soil. A third order polynomial regression model was proposed to describe the relationship between RF impedance and volumetric water content. The prototype real time moisture meter consisted of the C-probe, sample container, oscillator, frequency counter and related signal processing units. The calibration equation for measurement of volumetric moisture content of soil was developed and validated. The correlation coefficient and root mean square error between measured volumetric water content by oven method and predicted values by prototype moisture meter for unknown soil samples were 0.984 and 0.032$cm^3$$cm\^3$, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.7
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• pp.3160-3164
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• 2012

To obtain available process at low temperature, SiOC thin film was prepared with various flow rates by using the rf magnetron sputtering, and AZO thin film was also deposited on SiOC film by rf magnetron sputtering system. The optical electrical properties of the SiOC film and SiOC/AZO were analyzed by the uv visible spectrometer and PL spectra. SiOC film on n type Si showed various type emission according to the deposition condition. The SiOC film showed the blue shift with increasing the thickness in PL spectra. AZO/SiOC/Si film had a broad emission characteristic, which is enhanced the efficiency in solar cell.