• Title/Summary/Keyword: RF-type

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A Simple and Accurate Parameter Extraction Method for Substrate Modeling of RF MOSFET (간단하고 정확한 RF MOSFET의 기판효과 모델링과 파라미터 추출방법)

  • 심용석;양진모
    • Proceedings of the Korea Society of Information Technology Applications Conference
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    • 2002.11a
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    • pp.363-370
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    • 2002
  • A substrate network model characterizing substrate effect of submicron MOS transistors for RF operation and its parameter extraction with physically meaningful values are presented. The proposed substrate network model includes a single resistance and inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed with out any optimization. The proposed modeling technique has been applied to various-sized MOS transistors. Excellent agreement the measurement data and the simulation results using extracted substrate network model up to 30GHz.

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Accurate De-embedding Scheme for RF MEMS Inductor (RF MEMS 인덕터의 특성 추출을 위한 De-embedding방법)

  • Lee, Young-Ho;Kim, Yong-Dae;Kim, Ji-Hyuk;Yook, Jong-Gwan
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.163-167
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    • 2003
  • In this paper, an air-suspension type RF MEMS inductor is fabricated, and an appropriate de-embedding scheme for 3-dimenstional MEMS structure is applied and verified with inductance calculation algorithm. With the presented de-embedding method, parasitics from contanct pads and feeding lines are effectively and accurately de-embedded using open and short calibration procedure, and only spiral and posts can be characterized as a high-Q inductor structure. The validity of the de-embedding method is verified by the comparison of the measured and calculated inductances of two 1.5 and 2.5 turn square spiral inductors. The open-short de-embedded inductance error is below 5% each case in comparison with the calculated value based on H.M. Greenhouse's algorithm.

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A Simple and Accurate Parameter Extraction Method for Substrate Modeling of RF MOSFET (간단하고 정확한 RF MOSFET의 기판효과 모델링과 파라미터 추출방법)

  • 심용석;양진모
    • Proceedings of the Korea Society for Industrial Systems Conference
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    • 2002.11a
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    • pp.363-370
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    • 2002
  • A substrate network model characterizing substrate effect of submicron MOS transistors for RF operation and its parameter extraction with physically meaningful values are presented. The proposed substrate network model includes a single resistance and inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed with out any optimization. The proposed modeling technique has been applied to various-sized MOS transistors. Excellent agreement the measurement data and the simulation results using extracted substrate network model up to 30㎓

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FIRST OPERATING TEST OF THE 700 MHz 1 MW PROTOTYPE KLYSTRON FOR A PROTON ACCELERATOR

  • Ko, Seung-Kook;Lee, Bo-Young;Lee, Kang-Ok;Hong, Jin-Seok;Jeon, Jae-Ha;Chung, Bo-Hyun;Noh, Seung-Jeong;Chung, Kie-Hyung
    • Nuclear Engineering and Technology
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    • v.38 no.8
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    • pp.779-784
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    • 2006
  • The design, manufacturing process, and first operating test of a high power RF source for a proton accelerator are described. A klystron amplifier system has been developed for operation at 700 MHz, 1 MW and is composed of a triode type electron gun, six cavities, an RF output window, a beam collector, and an electromagnet. The prototype klystron was constructed and tested at a reduced duty to produce the designed output RF power.

RF Power에 따른 BST박막의 특성

  • 최명률;권학용;박인철;김홍배
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2004.05a
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    • pp.174-178
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    • 2004
  • 본 논문에서는 P-type (100)Si 기판위에 RF magnetron sputtering법으로 완충층용 MgO 박막을 $500\AA$ 증착한 후 제작된 MgO/Si 기판위에 BST 박막을 증착하였다. 증착 시 기판온도는 $400^{\circ}C$ 작업가스 $AR:O_2:=80:20$, 작업진공 10mtorr에서 RF 파워를 25W, 50W, 75W로 변화하면서 증착하여 최적의 RF 파워조건을 확립하였다. XRD 측정결과 25W에서 증착된 BST 박막은 배향성이 보이지 않는 비정질 형태로 성장되었고 50W에서 증착된 박막의 결정특성이 가장 양호하였다. I-V측정결과 모든 샘플에서 $\pm150KV/cm$에서 $10^{-7}A/\textrm{cm}^2$이하의 양호한 누설전류특성을 나타내었고 C-V측정 결과 역시 50W에서 증착된 BST 박막의 비유전율이 약 305로서 가장 우수한 특성을 보여주었다.

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A Study on carbon nitride thin films prepared by RF reactively sputtering (RF 반응성 스퍼터링에 의한 비정질 carbon nitride 박막의 제조에 관한 연구)

  • 이철화;김병수;이상희;진윤영;이덕출;박구범
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.406-408
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    • 1999
  • Amorphous carbon nitride thin films were prepared on pretreated silicon(100) substrate in sputtering graphite target by activated gas phase using RF reactively sputtering. We measured the FT-IR spectrum to identify C=N(nitrile)stretching mode(2200cm$\^$-1/), C-H stretching mode(2800cm$\^$-1/), C-H bending mode, C=C stretching mode C=N(imino) mode(1680cm$\^$-1/ ), and the XPS to investigate chemical structure of surface. By the results of FT-H and XPS spectrum, We confirmed that amorphous carbon nitride films with typel (C(1s): 285.9[eV], N(1s): 398.5[ev]) and type 2(C1s): 287.5[eV, N(1s): 400.2[eV]) successfully were synthesized by RF reactively sputtering

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bandgap engineering of MgZnO thin films by co-sputtering (co-sputtering법으로 증착된 $Zn_{1-x}Mg_xO$ 박막의 밴드갭 엔지니어링)

  • Gang, Si-U;Kim, Yeong-Lee;An, Cheol-Hyeon;Jo, Hyeong-Gyun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.04a
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    • pp.47-48
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    • 2007
  • 본 실험에서는 MgO (99.999%)와 ZnO (99.999%)의 두가지 타겟을 사용한 RF co-스퍼터링법을 이용하여 p-type Si (100) 기판 위에 $Zn_{1-x}Mg_xO$ 박막을 증착 하였다. ZnO 타겟의 RF-power은 고정시키고 MgO 타겟의 RF-power를 조절함으로써 Mg 함량을 조절하였다. EDX분석을 통해 MgO RF-power의 증가에 따라 고용되는 Mg의 함량이 증가함을 알 수 있었다. 또한 MgZnO내 Mg 함량이 높아짐에 따라 c-축 격자상수가 감소하는 것을 XRD분석을 통해 알 수 있었고, MgO기반의 2차상은 형성되지 않았다. PL 측정을 통해 Mg함량이 증가 할수록 UV 영역의 파장의 강도는 감소하고 UV 파장의 위치는 blueshift되는 것을 관찰 할 수 있었다.

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Implementation of Ladder Type SAW Filters for Mobile Communication (이동통신 시스템을 위한 사다리형 표면탄성파 필터의 구현)

  • 이택주;정덕진
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.3
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    • pp.1-9
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    • 2003
  • In this paper, we designed a highly suppressed sidelobe ladder type RF SAW bandpass filter based on 1-port resonator, for 800 MHz mobile communication system. In order to get the highest device characteristics, we optimized some important parameters such as the electrode thickness, electrode lambda weghting of the reflectors, and static capacitance ratio. Furthermore, we fabricated the Tx and Rx. filter using optimized parameters. Implemented filters can be used in 800 MHz mobile communication system and external impedance matching circuits are not needed. RF filter was fabricated on 36$^{\circ}$LiTaO$_3$ substrates with Al-Cu (W 3 %)and mounted 3.8mm$\times$3.8mm$\times$1.5mm SMD package. Developed filters has 2.3 dB insertion loss in the 25 MHz pass-band, 33MHz with 3-dB insertion loss, stop-band rejection of 30 dB, passband ripple is less than 0.5 The power durability of the filters measured about 3.5W and the maximum temperature variation within -2$0^{\circ}C$~8$0^{\circ}C$ was 0.09 dB/$^{\circ}C$ of 3-dB insertion loss.

Synthesis of p-Type ZnO Thin Film Prepared by As Diffusion Method and Fabrication of ZnO p-n Homojunction

  • Kim, Deok Kyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.6
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    • pp.372-375
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    • 2017
  • ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.

Mixing Characteristics of Static Mixers for Emulsion Oil (이멀션유 정적믹서의 혼합특성 연구)

  • 김기성;박상규
    • Proceedings of the Korean Society of Marine Engineers Conference
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    • 2000.11a
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    • pp.91-98
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    • 2000
  • The fuels of water-in-oil emulsion have a potential of reducing PM(Particulate Matter) and NOx emissions, and increassing combustion efficiency in the furnaces and the burners. For making the most of the beneficial of the secondary atomization due to the microexplosion, the water droplets distributed in the oil must have the optimal sizes. The purpose of this paper is to investigate the water droplet size distribution characteristics of the different types of the static mixers. For analysing the size distribution characteristics efficiently, image analysis system was constructed and an appropriate image processing algorithm was developed. Two kinds of static mixers: Kenics type and RF type, were tested. As a results, RF type static mixer shows a better characteristics in the mean drop sizes, particularly in the condition of high water content.

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