• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.126-126
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• 2009

Noninvasive plasma diagnostic technique is introduced to analyze and characterize HICP (Helmholtz Inductively Coupled Plasma) source during the plasma etching process. The HICP reactor generates plasma mainly through RF source power at 13.56MHz RF power and RF bias power of 12.56MHz is applied to the cathode to independently control ion density and ion energy. For noninvasive sensors, the RF sensor and the OES (Optical emission spectroscopy) were employed since it is possible to obtain both physical and chemical properties of the reactor with plasma etching. The plasma impedance and optical spectra were observed while altering process parameters such as pressure, gas flow, source and bias power during the poly silicon etching process. In this experiment, we have found that data measured from these noninvasive sensors can be correlated to etch results. In this paper, we discuss the relationship between process parameters and the measurement data from RF sensor and OES such as plasma impedance and optical spectra and using these relationships to analyze and characterize H-ICP source.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2010년도 제35회 추계학술대회논문집
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• pp.764-767
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• 2010

전북대학교 고온플라즈마 응용연구센터 구축사업단에서는 MW급 초음속 플라즈마 풍동을 구축하고 있다. 구축되는 장비는 0.4MW/2.4MW급 Huels형 DC 플라즈마 장치 및 60kW/200kW급 RF 플라즈마장치 등으로 구성되며 이러한 장비를 지원하는 공통지원설비가 별도로 구축되게 된다. 공통지원설비는 플라즈마 풍동을 구동하기 위한 수변전설비 및 가스공급설비, 냉각수공급설비, NOx 제거용 후처리 설비, 예비전원설비 등으로 구성되어 있다. 4기의 플라즈마 장치와 공통지원설비를 위한 건축물은 시험동, 연구동, 수변전동, 기체저장동, 냉각탑 기초로 구성되어 있다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1915-1917
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• 2004

Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminance as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10 [mTorr] to 500 [mTorr] and the RF power was varied from 10 [W] to 200 [W]. It was found that the luminance tends to be decreased when argon pressure is increased, and the luminance is increased as RF power is increased. It was also found that the luminance per unit RF power is high when the argon pressure is low and when the RF power is in the range of 30 [W]${\sim}$40 [W].

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.43-48
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• 2020

The demand for stable plasma has been on the rise because of the increased delivery power amount in the chamber for improving productivity, and fast and accurate plasma impedance matching become a crucial performance measure for radio frequency (RF) power system in semiconductor manufacturing equipment. In this paper, the overall impedance matching was understood, and voltage and current values were extracted with voltage - current (VI) probe to measure plasma impedance in real-time. Actual matching data were analyzed to derive calibration coefficient for V and I measurements to understand the characteristics of VI probe, and we demonstrated the tendency of RF impedance matching according to changes in load impedance. This preliminary empirical research can contribute to fast RF matching as well as advanced equipment control for the next level of detailed investigation on embedded system based-RF matching controller.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.265-272
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• 2014

The ion energy distributions (IEDs) arriving at a substrate strongly affect the etching rates in plasma etching processes. In order to determine the IEDs accurately, it is important to obtain the characteristics of radio frequency (rf) sheath at pulsed rf substrates. However, very few studies have been conducted to investigate pulsing effect on IEDs at multiple rf driven electrodes. Therefore, in this work, we extended previous one-dimensional dynamics model for pulsed-bias electrodes. We obtained the IEDs using the developed rf sheath model and observed that numerically solved IEDs are in a good agreement with the experimental results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.203-203
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• 2010

Nano-crystalline Si thin films were deposited on polymer and glass by inductively coupled plasma (ICP) - assisted RF magnetron sputtering at low temperature in an argon and hydrogen atmosphere. Internal ICP coil was installed to increase hydrogen atoms dissociated by the induced magnetic field near the inlet of the working gases. The microstructure of deposited films was investigated with XRD, Raman spectroscopy and TEM. The crystalline volume fraction of the deposited films on polymer was about 70% at magnetron RF power of 600W and ICP RF power of 500W. Crystalline volume fraction was decreased slightly with increasing magnetron RF power due to thermal damage by ion bombardment. The diffraction peak consists of two peaks at $28.18^{\circ}$ and $47.10^{\circ}\;2{\theta}$ at magnetron RF power of 600W and ICP RF power of 500W, which correspond to the (111), (220) planes of crystalline Si, respectively. As magnetron power increase, (220) peak disappeared and a dominant diffraction plane was (111). In case of deposited films on glass, the diffraction peak consists of three peaks, which correspond to the (111), (220) and (311). As the substrate temperature increase, dominant diffraction plane was (220) and the thickness of incubation (amorphous) layer was decreased.

• 한국진공학회지
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• 제15권3호
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• pp.259-265
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• 2006

[ $RF-O_2$ ] plasma 처리한 MgO 박막의 스퍼터링 수율을 집속이온빔 장치를 이용하여 측정하였다. 가속 전압 10 kV의 Ga 이온빔을 주사했을 때 plasma 처리하지 않은 MgO 박막의 스퍼터링 수율은 0.33 atoms/ion, $RF-O_2$ plasma 처리한 MgO 박막의 스퍼터링 수율은 0.20 atoms/ion 으로 $RF-O_2$ plasma 처리한 경우 스퍼터링 수율이 낮아졌다. 또한 XPS, AFM을 통해 plasma 처리로 인한 MgO 표면의 변화를 관찰하였다. MgO 박막에 $RF-O_2$ plasma 처리한 후 XPS O 1s spectra의 binding energy와 FWHM 값이 각각 2.36 eV와 0.6167 eV 작아졌고 표면거칠기의 RMS 값 또한 0 32 nm 작아졌다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.220-221
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• 2007

Micro plasma has been recently studied to investigate the effects on various cells. We study a micro-plasma produced by a plasma needle that is operated with RF power and its effects on G361 melanoma cells. The micro plasma size ranges from sub-mm to several mm at a few watts of RF power. For the bio-medical treatment, low-temperature plasma is obtained and gas temperature is controlled within several tens of degrees $(^{\circ}C)$ in order not to disturb cell activities. Elementary spectroscopic studies to obtain plasma characteristics are presented for Ar and He plasma with different frequencies of RF power. Also the preliminary results of the micro plasma effects on G361 melanoma cells are presented. It was observed that the irradiation of micro plasma induces cell death through the deprivation of tyrosine phosphorylation in the G361 cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.550-551
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• 2013

Large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER plasmas. Negative hydrogen (deuterium) ion sources are major components of neutral beam injection systems in future large-scale fusion experiments such as ITER and DEMO. RF ion sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck- Institute for Plasma Physics, Garching) for ASDEX-U and W7-AS neutral beam injection (NBI) systems. In recent, the first NBI system (NBI-1) has been developed successfully for the KSTAR. The first and second long-pulse ion sources (LPIS-1 and LPIS-2) of NBI-1 system consist of a magnetic bucket plasma generator with multi-pole cusp fields, filament heating structure, and a set of tetrode accelerators with circular apertures. There is a development plan of large-area RF ion source at KAERI to extract the positive ions, which can be used for the second NBI (NBI-2) system of KSTAR, and to extract the negative ions for future fusion devices such as ITER and K-DEMO. The large-area RF ion source consists of a driver region, including a helical antenna (6-turn copper tube with an outer diameter of 6 mm) and a discharge chamber (ceramic and/or quartz tubes with an inner diameter of 200 mm, a height of 150 mm, and a thickness of 8 mm), and an expansion region (magnetic bucket of prototype LPIS in the KAERI). RF power can be transferred up to 10 kW with a fixed frequency of 2 MHz through a matching circuit (auto- and manual-matching apparatus). Argon gas is commonly injected to the initial ignition of RF plasma discharge, and then hydrogen gas instead of argon gas is finally injected for the RF plasma sustainment. The uniformities of plasma density and electron temperature at the lowest area of expansion region (a distance of 300 mm from the driver region) are measured by using two electrostatic probes in the directions of short- and long-dimension of expansion region.

• 한국산학기술학회논문지
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• 제9권2호
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• pp.327-332
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• 2008

본 논문에서는 반도체 소자와 디스플레이 패널의 제조공정에 사용되는 플라즈마 식각장비의 RF 정합특성을 개선하기 위한 모듈을 제안하였다. 구동부의 기구 중 베벨기어를 웜기어로 새롭게 설계 제작하고 제어부도 원칩 마이크로 프로세서를 이용하여 재구성하였다. 개발된 모듈은 기존의 정합장치보다 다양한 공정변수에 대한 능동적인 대처가 가능하고, 모터의 흐름현상 등을 개선함으로서 RF 정합특성이 개선되어, 플라즈마 식각공정의 생산성을 향상시킬 수 있음을 보였다.