• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.126-126
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• 2009

Noninvasive plasma diagnostic technique is introduced to analyze and characterize HICP (Helmholtz Inductively Coupled Plasma) source during the plasma etching process. The HICP reactor generates plasma mainly through RF source power at 13.56MHz RF power and RF bias power of 12.56MHz is applied to the cathode to independently control ion density and ion energy. For noninvasive sensors, the RF sensor and the OES (Optical emission spectroscopy) were employed since it is possible to obtain both physical and chemical properties of the reactor with plasma etching. The plasma impedance and optical spectra were observed while altering process parameters such as pressure, gas flow, source and bias power during the poly silicon etching process. In this experiment, we have found that data measured from these noninvasive sensors can be correlated to etch results. In this paper, we discuss the relationship between process parameters and the measurement data from RF sensor and OES such as plasma impedance and optical spectra and using these relationships to analyze and characterize H-ICP source.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.11a
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• pp.764-767
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• 2010

The high enthalpy plasma research center in Chonbuk national university is under construction for MW class plasma wind tunnel. Four types of plasma equipment will be installed in the research center. The equipments are 1set of 0.4 MW class enhanced Huels type plasma equipment, 1 set of 2.4 MW class enhanced Huels type plasma equipment, 1 set of 60 kW RF plasma equipment and 1 set of 200 kW RF plasma equipment. And electrical, water and gas utilities to assistant plasma equipments are under construction. The research center consists of experiment building, research building, power supply building, air supply building, cooling tower foundation.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1915-1917
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• 2004

Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminance as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10 [mTorr] to 500 [mTorr] and the RF power was varied from 10 [W] to 200 [W]. It was found that the luminance tends to be decreased when argon pressure is increased, and the luminance is increased as RF power is increased. It was also found that the luminance per unit RF power is high when the argon pressure is low and when the RF power is in the range of 30 [W]${\sim}$40 [W].

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.43-48
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• 2020

The demand for stable plasma has been on the rise because of the increased delivery power amount in the chamber for improving productivity, and fast and accurate plasma impedance matching become a crucial performance measure for radio frequency (RF) power system in semiconductor manufacturing equipment. In this paper, the overall impedance matching was understood, and voltage and current values were extracted with voltage - current (VI) probe to measure plasma impedance in real-time. Actual matching data were analyzed to derive calibration coefficient for V and I measurements to understand the characteristics of VI probe, and we demonstrated the tendency of RF impedance matching according to changes in load impedance. This preliminary empirical research can contribute to fast RF matching as well as advanced equipment control for the next level of detailed investigation on embedded system based-RF matching controller.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.265-272
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• 2014

The ion energy distributions (IEDs) arriving at a substrate strongly affect the etching rates in plasma etching processes. In order to determine the IEDs accurately, it is important to obtain the characteristics of radio frequency (rf) sheath at pulsed rf substrates. However, very few studies have been conducted to investigate pulsing effect on IEDs at multiple rf driven electrodes. Therefore, in this work, we extended previous one-dimensional dynamics model for pulsed-bias electrodes. We obtained the IEDs using the developed rf sheath model and observed that numerically solved IEDs are in a good agreement with the experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.203-203
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• 2010

Nano-crystalline Si thin films were deposited on polymer and glass by inductively coupled plasma (ICP) - assisted RF magnetron sputtering at low temperature in an argon and hydrogen atmosphere. Internal ICP coil was installed to increase hydrogen atoms dissociated by the induced magnetic field near the inlet of the working gases. The microstructure of deposited films was investigated with XRD, Raman spectroscopy and TEM. The crystalline volume fraction of the deposited films on polymer was about 70% at magnetron RF power of 600W and ICP RF power of 500W. Crystalline volume fraction was decreased slightly with increasing magnetron RF power due to thermal damage by ion bombardment. The diffraction peak consists of two peaks at $28.18^{\circ}$ and $47.10^{\circ}\;2{\theta}$ at magnetron RF power of 600W and ICP RF power of 500W, which correspond to the (111), (220) planes of crystalline Si, respectively. As magnetron power increase, (220) peak disappeared and a dominant diffraction plane was (111). In case of deposited films on glass, the diffraction peak consists of three peaks, which correspond to the (111), (220) and (311). As the substrate temperature increase, dominant diffraction plane was (220) and the thickness of incubation (amorphous) layer was decreased.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.259-265
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• 2006

We measured sputtering yield of RF $O_2-plasma$ treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.220-221
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• 2007

Micro plasma has been recently studied to investigate the effects on various cells. We study a micro-plasma produced by a plasma needle that is operated with RF power and its effects on G361 melanoma cells. The micro plasma size ranges from sub-mm to several mm at a few watts of RF power. For the bio-medical treatment, low-temperature plasma is obtained and gas temperature is controlled within several tens of degrees $(^{\circ}C)$ in order not to disturb cell activities. Elementary spectroscopic studies to obtain plasma characteristics are presented for Ar and He plasma with different frequencies of RF power. Also the preliminary results of the micro plasma effects on G361 melanoma cells are presented. It was observed that the irradiation of micro plasma induces cell death through the deprivation of tyrosine phosphorylation in the G361 cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.550-551
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• 2013

Large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER plasmas. Negative hydrogen (deuterium) ion sources are major components of neutral beam injection systems in future large-scale fusion experiments such as ITER and DEMO. RF ion sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck- Institute for Plasma Physics, Garching) for ASDEX-U and W7-AS neutral beam injection (NBI) systems. In recent, the first NBI system (NBI-1) has been developed successfully for the KSTAR. The first and second long-pulse ion sources (LPIS-1 and LPIS-2) of NBI-1 system consist of a magnetic bucket plasma generator with multi-pole cusp fields, filament heating structure, and a set of tetrode accelerators with circular apertures. There is a development plan of large-area RF ion source at KAERI to extract the positive ions, which can be used for the second NBI (NBI-2) system of KSTAR, and to extract the negative ions for future fusion devices such as ITER and K-DEMO. The large-area RF ion source consists of a driver region, including a helical antenna (6-turn copper tube with an outer diameter of 6 mm) and a discharge chamber (ceramic and/or quartz tubes with an inner diameter of 200 mm, a height of 150 mm, and a thickness of 8 mm), and an expansion region (magnetic bucket of prototype LPIS in the KAERI). RF power can be transferred up to 10 kW with a fixed frequency of 2 MHz through a matching circuit (auto- and manual-matching apparatus). Argon gas is commonly injected to the initial ignition of RF plasma discharge, and then hydrogen gas instead of argon gas is finally injected for the RF plasma sustainment. The uniformities of plasma density and electron temperature at the lowest area of expansion region (a distance of 300 mm from the driver region) are measured by using two electrostatic probes in the directions of short- and long-dimension of expansion region.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.327-332
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• 2008

New RF matcher module has been proposed in this paper for improvement of RF matcher in plasma etcher system using in semiconductor and display panel manufacturing process. New designed warm gear was used instead of bevel gear in new driving module, and control system was re-arranged with one-chip micro-process technique. The matching performance of new match module was improved in various process condition with reduction of backlash and matching time, and flexible motion of motor compared commercial match module. However this new type RF match module will improve the productivity in etching process of the mass production line.