• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.243-248
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• 1997

The effect of $O_2$ partial pressure on microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, are investigated. Saturation magnetization ($4{\pi}M_s$) of Fe-Hf-O film were decreased with increasing $O_2$ partial pressure, the best soft magnetic properties exhibit at $O_2$ partial pressure of 10%. With further increase of $O_2$ partial pressure, soft magnetic properties decreased continuously. The $Fe_{82}Hf_{3.4}O_{14.6}$ film with $P_{O2}=10%$ exhibits good soft magnetic properties with $4{\pi}M_s=17.7kG$, $H_c=0.7Oe$ and ${\mu}_ {eff}$ (1~100 MHz)=2,500, respectively. The addition of O is effective in grain refinement. In case of $P_{O2}=15%$, it is observed that $Fe_3O_4$ compound is formed and high frequency soft magnetic properties are decrease. The electrical resistvity($\rho$) of Fe-Hf-O film is increased with increasing $O_2$ partial pressure. Electrical resistivity of $Fe_{82}Hf_{3.4}O_{14.6}$ film was 5 times higher than that of the film without oxygen. Thus, it is considered that the good magnetic properties of $Fe_{82}Hf_{3.4}O_{14.6}$ film results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.237-242
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• 1997

The microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced at $P_{O2}=10%$ by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, is investigated. Newly developed $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits good soft magnetic properties with $4{\pi}M_s=17.7$ kG, $H_c=0.7$ Oe and ${\mu}_{eff}$(0.5~100MHz)=2,500, respectively. The Fe-Hf-O films are composed of $\alpha$-Fe nanograins and amorphous phase with larger amounts of Hf and O elements which chemically combine each other. With increasing Hf area fraction, Hf and O contents increased proportionally. It was considered that O content in films was determined by Hf contents, because O was chemically combined with Hf. It results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity. The $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits the quality factor (Q=$\mu$'/$\mu$") of 25 at 20 MHz. These good frequency characteristics are considered to be superior to other films already reported.o other films already reported.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.250-257
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• 1997

The microstructure and magnetic properties of Fe-Nb-B-N thin film alloys, which produced by rf magnetron sputtering method in $Ar+N_2$ mixed gas atmosphere, were investigated. The $Fe_{70}Nb_{14}B_{11}N_5$ films, annealed at 59$0^{\circ}C$, exhibit soft magnetic properties: $4{\pi}M_s=16.5kG$ , $H_c=0.13Oe$ and ${\mu}_{eff}$ (1~10 MHz)=5, 000. The frequency stability of the Fe-Nb-B-N films has also been found to be good up to 10 MHz. The Fe-Nb-B-N thin film alloys annealed at 59$0^{\circ}C$ consist of three phase; fine crystalline $\alpha$-Fe phase with grain size of about 5~10 nm, Nb-B rich amorphous phase and Nb-nitride precipitates with the size of less than 3 nm. Annealed Fe-Nb-B films have two phases; $\alpha$-Fe grains with the size of about 10 nm and Nb-B rich amorphous phase. The addition of N decreased $\alpha$-Fe grain size due to the precipitation of NbN. The good magnetic properties of the Fe-Nb-B-N film alloys are due to fine $\alpha$-Fe grains resulting from the precipitation of NbN.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.1042-1045
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• 2005

The feasibility of graphoepitaxial growth of compound semiconductor has been studied. Two kinds of substrates were prepared; one is smooth substrate, the other one is a periodic structured substrate. ZnO film was deposited on both substrates by sputtering, and thermal treatment was performed to improve the crystal quality and investigate the effect of the periodic structure. Atomic force microscopy (AFM) and photoluminescence (PL) were used to characterize the samples. As a result, very similarchange, the improvement of crystallinity, has been observed from both samples, except the sample annealed at the highest temperature. It implies the periodic structure affects the crystallinity of the films, and the graphoepitaxy of compound semiconductors is possible by using appropriate surface structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.62-62
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• 2000

비접촉식 온도센서는 물체에서 방출하는 적외선 등의 복사신호를 열에너지로 전환하고 이를 다시 전기신호로 2차 에너지 변환하여 온도를 감지하는 센서로 인체 검지를 응용한 다양한 상품 및 교통, 방재, 빌딩 시스템 등의 분야에 널리 응용되고 있다. 비접촉식 적외선 센서는 열에너지를 전기에너지로 변환하는 방법에 따라 양자형과 열형으로 구분되며, 이중 양자형은 광전도나 광기전력 효과 등을 이용하여 감도 및 응답성이 우수하다는 장점을 지니고 있지만, 소자부를 80K 이하 온도로 유지시키는 냉각을 필요로 하므로 대형 제작이 불가피하고 그 용도가 제한적이다. 열형은 냉각이 필요 없고 소형으로 제작가능한 장점을 지니고 있어 써모 파일이나 초전체를 이용한 번용 센서가 보급되고 있다. 그러나 써모파일의 경우 출력되는 전기 신호가 미약하여 감도 및 응답성을 향상하기 위해 구조가 복잡하고, 특히 모터초퍼나 저항을 전압으로 변환시키는 전력기 등이 필요로 하는 단점을 지니고 있다. 따라서 이러한 문제점을 보완하기 위해 열전재료 박막을 이용한 적외선 센서를 개발하려는 노력이 진행중에 있다. 열전박막을 이용한 적외선 센서는 열전재료의 Seebeck 현상을 이용하여 열에너지에서 전기에너지의 변환이 자가발전으로 이루어져 offset과 외부 바이어스를 필요로 하지 않는다. 또한 작은 온도 변화에도 그 감도와 응답성이 높고, 출력신호가 커서 증폭기 등이 불필요한 장점을 지니고 있다. 특히 초전형 센서가 상온에서도 기판에 대한 열 확산을 제어해야 하는 문제점을 갖는 반면, 열전박막형 적외선 센서는 고온에서도 안정된 출력 신호를 얻을 수 있어 그 활용 온도 범위가 크게 확대될 것으로 기대된다. 본 실험에서는 우수한 열전특성을 갖는 (Bi1-xSbx)2Te3 박막을 얻기 위해 열팽창계수가 작고 알칼리 원소가 0.3% 이하로 포함되어 있는 corning glass(# 7059)를 기판으로 사용하였다. 또한 최적의 열전특성을 나타내는 조성을 실험적으로 구하기 위해 (Bi0.2Sbx)2Te3 조성의 합금 타？ 위에 Bi2Te3 및 Sb2Te3 chip을 올려놓고 그 면적을 변화시켜 다양한 조성의 열전박막을 증착하였다. 열전박막의 증착시 산화와 오염에 의한 열전특성 변화를 최소화하기 위해 초기진공도를 1$\times$10-6 Torr로 하였으며, Ar 가스를 흘려주어 2$\times$102 Torr 의 증착진공도를 유지하였다. 열전박막을 증착하기 전에 기판을 10분간 200W의 출력으로 RF 처리하였으며, 30$0^{\circ}C$에서 33 /sec의 속도로 (Bi1-xSbx)2Te3 박막을 증착하였다. 이와 같이 제조된 (Bi1-xSbx)2Te3 박막의 미세구조를 SEM으로 관찰하고 EDS로 조성을 분석하였으며, XRD를 이용하여 결정성을 관찰하였다. 또한 (Bi1-xSbx)2Te3 박막의 Seebeeck 계수 및 전기비저항을 측정하고 증착된 박막조성, 결정상, 미세구조와 열전특성간의 상관관계를 고찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.455-455
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• 2010

차세대 디스플레이로 널리 알려져 있는 플렉서블 디스플레이는 휴대하기 쉽고, 깨지지 않으며, 변형이 자유로워 현재 우리 사회에 크게 주목받고 있다. 플렉서블 디스플레이의 구현을 위해서는 기존의 유리 기반 디스플레이 소자 기술에 더하여 플렉서블 기판소재에 적용 가능한 투명전도막 기술의 확립이 필요하다. 디스플레이 산업에서 주로 사용되는 투명전도막은 ITO (indium tin oxide) 및 IZO (indium zinc oxide)와 같은 투명전도성 산화물 박막 (TCO, transparent conducting oxide)이다. 그런데 플라스틱 기판이 굽힘 환경에 놓이게 되면 그 위에 증착된 산화물 박막이 쉽게 파손될 수 있다. 따라서 플렉서블 디스플레이 기술에 있어서 변형에 따른 TCO 박막의 파괴 거동에 대한 연구가 필수적이다. 본 연구에서는 PET (polyethylene terephthalate) 기판 상에 증착된 IZO 박막의 반복 굽힘 시 계면구조 변화에 따른 파괴거동을 조사하였다. 플라스틱 기판의 사용을 위해서는 산소 및 수분의 투과 방지막이 필요하며 본 연구에서는 투과 방지막 (또는 보호막)으로서 $SiO_x$ 박막을 적용하였다. IZO 박막은 $In_2O_3$ - 10 wt% ZnO 타겟을 사용하여 RF magnetron sputtering법으로 $100^{\circ}C$ 미만에서 저온 증착하였다. 보호막으로 사용되는 $SiO_x$ 박막은 HMDSO (hexamethyldisiloxane)와 Ar 및 $O_2$ 혼합기체를 이용하는 PECVD 방법으로 합성하였다. 변형에 따른 TCO 박막의 파괴 거동을 조사하기 위하여 반복 굽힘 시험 (cyclic- bending test)을 실시하였다. 반복 굽힘 시험 중 실시간으로 IZO 박막의 전기저항 변화를 측정하여 박막의 파괴 거동을 모니터링 하였다. 시편 A (135 nm-thick IZO/PET), B (135 nm-thick IZO/ 90 nm-thick $SiO_x$/PET), C (135nm-thick IZO/ 300 nm-thick $SiO_x$/PET)에 대하여 곡지름 35mm, 1000회 반복 굽힘을 실시하여 변형 중의 전기저항 변화를 조사하였다. 그리고 굽힘 시험 완료 후, FE-SEM을 이용한 시편 표면형상 관찰을 통하여 균열생성 정도를 관찰하였다. 반복 굽힘 시험 결과, A 와 C 시편의 경우, 각각 반복 굽힘 20회, 550회에서 급격한 전기저항의 증가가 관찰되었다. 그러나 B 시편의 경우, 1000회 반복 굽힘 후에도 전기저항의 변화는 나타나지 않았다. 이와 같이 반복 굽힘에 의한 IZO 박막의 파괴 거동 변화는 IZO 박막과 기판의 계면구조변화에 기인한 것으로 해석된다. IZO 박막과 기판의 계면에 $SiO_x$ 층을 삽입함으로써 계면 접합강도가 향상되었을 것으로 추측된다. 따라서 변형에 대한 파괴 저항 특성이 우수한 투명전도성 산화물 박막의 형성을 위해서는 적절한 계면구조 제어를 통한 계면 접합 특성의 향상이 필요하다.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.887-892
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• 2019

In this study, after 20nm-thick $SiO_2$ thin film was deposited by PECVD method on the PES substrate, which is known to have the highest heat resistance among plastic substrates, as a buffer layer, ITZO thin films were deposited by RF magnetron sputtering method to investigate the electrical and optical properties according to the working pressure. The ITZO thin film deposited at the working pressure of 3mTorr showed the best electrical properties with a resistivity of $8.02{\times}10^{-4}{\Omega}-cm$ and a sheet resistance of $50.13{\Omega}/sq.$. The average transmittance in the visible region (400-800nm) of all ITZO films was over 80% regardless of working pressure. The Figure of merit showed the largest value of $23.90{\times}10^{-4}{\Omega}^{-1}$ in the ITZO thin film deposited at 3mTorr. This study found that ITZO thin films are very promising materials to replace ITO thin films in next-generation flexible display devices.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.3
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• pp.497-504
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• 2019

We fabricated $HfO_2$ thin films using RF magnetron sputtering method, and investigated structural and optical properties of $HfO_2$ thin films with RTA temperatures in $N_2$ ambient. $HfO_2$ thin films exhibited polycrystalline structure regardless of annealing process, FWHM of M (-111) showed reduction trend. The surface roughness showed the smallest of 3.454 nm at a annealing temperature of $600^{\circ}C$ in result of AFM. All $HfO_2$ thin films showed the transmittance of about 80% in visible light range. By fitting the refractive index from the transmittance and reflectance to the Sellmeir dispersion relation, we can predict the refractive index of the $HfO_2$ thin film according to the wavelength. The $HfO_2$ thin film annealed at $600^{\circ}C$ exhibited a high refractive index of 2.0223 (${\lambda}=632nm$) and an excellent packing factor of 0.963.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.37-42
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• 2021

The effect of chemical composition on the structural and thermal properties of TiZrN thin films was studied. As the Zr fraction in the deposited TixZr1-xN (x = 0.87, 0.82, 0.7, 0.6, and 0.28) increased, microstructural changes consisted of reduction in the grain size and a gradual transition from columnar structure to granular structure were observed. In addition, it was also confirmed that a gradual crystal phase transition from TiN to TiZrN has occurred as the Zr fraction increased up to 0.4. After heat treatment at 900℃, Ti0.82Zr0.18N and Ti0.7Zr0.3N layers were converted to a form in which rutile phase TiO2 and TiZrO4 oxides coexist, while Ti0.6Zr0.4N layer was converted to TiZrO4 oxide. Among the five compositions of TiZrN films, the Ti0.6Zr0.4N showed the best high temperature stability and produced a significant enhancement in the thermal oxidation resistance of Inconel 617 through suppressing the surface diffusion of Cr caused by thermal oxidation of the Inconel 617 substrate.