• 제목/요약/키워드: RF-EMF

검색결과 12건 처리시간 0.019초

Activation of autophagy at cerebral cortex and apoptosis at brainstem are differential responses to 835 MHz RF-EMF exposure

  • Kim, Ju Hwan;Yu, Da-Hyeon;Kim, Hak Rim
    • The Korean Journal of Physiology and Pharmacology
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    • 제21권2호
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    • pp.179-188
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    • 2017
  • With the explosive increase in exposure to radiofrequency electromagnetic fields (RF-EMF) emitted by mobile phones, public concerns have grown over the last few decades with regard to the potential effects of EMF exposure on the nervous system in the brain. Many researchers have suggested that RF-EMFs can effect diverse neuronal alterations in the brain, thereby affecting neuronal functions as well as behavior. Previously, we showed that long-term exposure to 835 MHz RF-EMF induces autophagy in the mice brain. In this study, we explore whether shortterm exposure to RF-EMF leads to the autophagy pathway in the cerebral cortex and brainstem at 835 MHz with a specific absorption rate (SAR) of 4.0 W/kg for 4 weeks. Increased levels of autophagy genes and proteins such as LC3B-II and Beclin1 were demonstrated and the accumulation of autophagosomes and autolysosomes was observed in cortical neurons whereas apoptosis pathways were up-regulated in the brainstem but not in the cortex following 4 weeks of RF exposure. Taken together, the present study indicates that monthly exposure to RF-EMF induces autophagy in the cerebral cortex and suggests that autophagic degradation in cortical neurons against a stress of 835 MHz RF during 4 weeks could correspond to adaptation to the RF stress environment. However, activation of apoptosis rather than autophagy in the brainstem is suggesting the differential responses to the RF-EMF stresses in the brain system.

Possible Effects of Radiofrequency Electromagnetic Field Exposure on Central Nerve System

  • Kim, Ju Hwan;Lee, Jin-Koo;Kim, Hyung-Gun;Kim, Kyu-Bong;Kim, Hak Rim
    • Biomolecules & Therapeutics
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    • 제27권3호
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    • pp.265-275
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    • 2019
  • Technological advances of mankind, through the development of electrical and communication technologies, have resulted in the exposure to artificial electromagnetic fields (EMF). Technological growth is expected to continue; as such, the amount of EMF exposure will continue to increase steadily. In particular, the use-time of smart phones, that have become a necessity for modern people, is steadily increasing. Social concerns and interest in the impact on the cranial nervous system are increased when considering the area where the mobile phone is used. However, before discussing possible effects of radiofrequency-electromagnetic field (RF-EMF) on the human body, several factors must be investigated about the influence of EMFs at the level of research using in vitro or animal models. Scientific studies on the mechanism of biological effects are also required. It has been found that RF-EMF can induce changes in central nervous system nerve cells, including neuronal cell apoptosis, changes in the function of the nerve myelin and ion channels; furthermore, RF-EMF act as a stress source in living creatures. The possible biological effects of RF-EMF exposure have not yet been proven, and there are insufficient data on biological hazards to provide a clear answer to possible health risks. Therefore, it is necessary to study the biological response to RF-EMF in consideration of the comprehensive exposure with regard to the use of various devices by individuals. In this review, we summarize the possible biological effects of RF-EMF exposure.

Exposure to 835 MHz RF-EMF decreases the expression of calcium channels, inhibits apoptosis, but induces autophagy in the mouse hippocampus

  • Kim, Ju Hwan;Sohn, Uy Dong;Kim, Hyung-Gun;Kim, Hak Rim
    • The Korean Journal of Physiology and Pharmacology
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    • 제22권3호
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    • pp.277-289
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    • 2018
  • The exponential increase in the use of mobile communication has triggered public concerns about the potential adverse effects of radiofrequency electromagnetic fields (RF-EMF) emitted by mobile phones on the central nervous system (CNS). In this study, we explored the relationship between calcium channels and apoptosis or autophagy in the hippocampus of C57BL/6 mice after RF-EMF exposure with a specific absorption rate (SAR) of 4.0 W/kg for 4 weeks. Firstly, the expression level of voltage-gated calcium channels (VGCCs), a key regulator of the entry of calcium ions into the cell, was confirmed by immunoblots. We investigated and confirmed that pan-calcium channel expression in hippocampal neurons were significantly decreased after exposure to RF-EMF. With the observed accumulation of autolysosomes in hippocampal neurons via TEM, the expressions of autophagy-related genes and proteins (e.g., LC3B-II) had significantly increased. However, down-regulation of the apoptotic pathway may contribute to the decrease in calcium channel expression, and thus lower levels of calcium in hippocampal neurons. These results suggested that exposure of RF-EMF could alter intracellular calcium homeostasis by decreasing calcium channel expression in the hippocampus; presumably by activating the autophagy pathway, while inhibiting apoptotic regulation as an adaptation process for 835 MHz RF-EMF exposure.

The Effect of Sub-chronic Whole-Body Exposure to a 1,950 MHz Electromagnetic Field on the Hippocampus in the Mouse Brain

  • Son, Yeonghoon;Jeong, Ye Ji;Kwon, Jong Hwa;Choi, Hyung-Do;Pack, Jeong-Ki;Kim, Nam;Lee, Yun-Sil;Lee, Hae-June
    • Journal of electromagnetic engineering and science
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    • 제15권3호
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    • pp.151-157
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    • 2015
  • The increasing use of mobile phones has raised public concern about the possible biological effects of radiofrequency electromagnetic field (RF-EMF) exposure on the human brain. To investigate the potential effect of RF-EMF exposure on the brain, we examined the behaviors and hippocampal morphology of C57BL/6 mice after sub-chronic exposure to RF-EMFs with a relatively high SAR level (5.0 W/kg). We applied a 2-hour daily exposure of WCDMA 1,950 MHz using a reverberation chamber that was designed for whole-body exposure for 60 days. In the behavioral tests, RF-EMF did not alter the physical activity or long-term memory of mice. Moreover, no alteration was found in the neuronal and glial cells in the hippocampus by RF-EMFs. In this study, we showed that sub-chronic whole body RF exposure did not produce memory impairment and hippocampal morphological alteration in C57BL/6 mice.

Effect of Ginseng on Calretinin Expression in Mouse Hippocampus Following Exposure to 835 MHz Radiofrequency

  • Aryal, Bijay;Maskey, Dhiraj;Kim, Myeung-Ju;Yang, Jae-Won;Kim, Hyung-Gun
    • Journal of Ginseng Research
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    • 제35권2호
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    • pp.138-148
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    • 2011
  • Exponential rise in the use of mobile communication devices has generated health concerns due to radiofrequency (RF) exposure due to its close proximity to the head. Calcium binding proteins like calretinin regulate the levels of calcium ($Ca^{2+}$) which plays an important role in biological systems. Ginseng is known for maintaining equilibrium in the human body and may play a beneficial radioprotectant role against electromagnetic field (EMF) exposure. In the present study, we evaluated the radioprotective effects of red ginseng (RG) extract in a mouse model. Calretinin (CR) expression was measured using a free-floating immunohistochemical method in the hippocampus of mice after 835 MHz EMF exposure for 5 h/d for 5 d at specific absorption rate=1.6 W/kg for the different experimental groups. The control animals were treated with NaCl while the experimental animals received 10 mg/kg ginseng, or 30 mg/kg; EMF exposed mice were also treated with NaCl, 10 mg/kg ginseng (E10), or 30 mg/kg (E30). Decreases in CR immunoreactivity (IR) along with loss of CA1 and CA3 interneurons and infragranular cells were observed in the ENaCl group while such losses were not observed in the E10 and E30 groups. CR IR significantly increased in the RG-treated group compared to control and EMF-exposed groups treated with NaCl. The study demonstrates that RG extract can serve as a radioprotective agent that maintains $Ca^{2+}$ homeostasis and prevents neuronal loss in the brain hippocampal region caused by RF exposure.

휴대전화 전자파에 의한 자각증상 및 생리학적 변화 (Subjective Symptoms and Physiological Changes of RF Exposure by a Cellular Phone)

  • 홍현기;지효철;김수찬;김덕원
    • 전자공학회논문지SC
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    • 제45권3호
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    • pp.59-67
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    • 2008
  • 최근 휴대폰 보급률이 증가하면서 휴대폰 전자파로 인해 두통, 불면증, 단기간의 기억력 소실 등의 정신 신경 생리학적 증상을 호소하는 휴대폰 전자파 과민증(EHS, Electromagnetic Hypersensitivity) 환자들이 나타나고 있다. 그러나 휴대폰 전자파 과민반응의 원인이 막연한 불안감 때문인지 혹은 전자파 노출로 인한 증상 인지에 대하여 확실한 원인규명이 되지 않고 있다. GSM 방식의 휴대폰의 경우 전자파 노출 시 EHS 군을 대상으로 혈압, 맥박수 변화 및 자각 증상 등의 과민 반응에 대한 연구들이 수행되었으나 일반인과 EHS 군의 실험-대조군 연구로 생체신호, 자각증상 및 전자파 인지 여부에 대한 복합적인 연구와 CDMA 휴대폰 EHS 연구는 거의 없는 실정이다. 본 연구에서는 일반인 19명과 EHS 17명을 대상으로 30분간 300 mW의 CDMA 휴대폰 전자파에 노출 시 교감신경의 흥분을 나타내는 맥박, 호흡수, HRV(heart rate variability)의 변화를 측정하고, 전자파 노출 시 전자파 인지여부와 두통, 피로 등의 자각증상을 조사하였다. 그 결과, 일반인과 EHS 군 모두 전자파 노출여부에 따라 맥박, 호흡수, HRV의 변화가 없었고, 자각증상의 차이도 없었다. 전자파 인지 조사 결과 EHS 군이 일반인 군에 비하여 전자파를 더 잘 인지한다고 볼 수 없었다.

3축 등방성 전계강도 측정 안테나 (Three Axis Isotropic Field Strength Measuring Antenna)

  • 최석환;김동석
    • 한국전자파학회논문지
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    • 제25권9호
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    • pp.879-885
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    • 2014
  • 논문에서는 전자파(EMFs) 측정을 위한 광대역 3축 등방성 안테나를 설계 및 제작하였다. 제안된 3축 안테나의 각축에 따른 개별 안테나는 등방성 특성을 가지며, 임의의 안테나 축을 선택하기 위하여 RF 스위치를 사용하였다. 또한, 안테나의 이득 개선 및 잡음성분을 억제하기 위하여 각 축에 저항을 삽입하였고, 각 다이폴 안테나의 포트 임피던스는 발룬을 사용하여 정합하였다. 안테나의 성능 검증을 위하여, 표준전자기장을 만들어주는 GTEM Cell를 사용하여 antenna factor 및 수신감도를 도출하였다. 결과적으로, 제작된 3축 등방성 안테나는 0.03~3 GHz의 넓은 동작주파수 범위 내에서 수신감도 0.12~4.2 mV/m, VSWR(typical)은 3.3:1 이하이다.

전자파 비흡수율(SAR) 측정용 전기장 프로브의 검파 전압 특성 (Characteristics of the Detection Voltages of an E-field Sensing Probe in SAR Measurement System)

  • 김윤명;이승배;김기회
    • 한국전자파학회논문지
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    • 제16권2호
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    • pp.217-221
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    • 2005
  • 이동통신 기기로부터 복사되는 전자파가 인체에 흡수되는 에너지의 양은 모의 인체 내에서 전자파 비흡수율 [SAR(Specific Absorption Rate)]로 평가된다. RF 센싱 프로브의 Schottky 다이오드에 검출된 DC 전압은 높은 레벨에서 자승법칙(Square Law) 영역을 벗어나 선형성을 나타낸다. Square Law Region을 벗어난 직선 영역의 검파는 적절한 DCP(Diode Compression Point) 값으로 검 파된 전압을 보상하여야 한다. 적절한 보상에 의한 한 점에서의 SAR 값은 200 W/kg까지 측정할 수 있다.

YSZ(yttria-stabilized zirconia) 박막을 이용한 센서 셀의 산소 감응 (Oxygen detection of sensor cells based on YSZ (Yttria-Stabilized Zirconia) thin films)

  • 박준용;배정운;황순원;김기동;조영아;전진석;최동수;염근영
    • 한국진공학회지
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    • 제8권4B호
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    • pp.507-513
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    • 1999
  • 8mol%-yttria-stabilized zirconia(YSZ) thin films as oxygen ion conductor were deposited by rf-magnetron sputtering, and the oxygen gas sensors with the structure of $SiO_2$ substrate/Ni-NiO mixed reference layer/Pt/YSZ/Pt were fabricated and their oxygen sensing properties were investigated. The steady-state electro-motive force (EMF) values were measured as a function of oxygen partial pressure ($PO_2;form 1.013\times10^3 \textrm{Pa \;to}\; 1.013\times10^5$Pa) and operating temperature ($300^{\circ}C$ to $700^{\circ}C$). The fabricated YSZ oxygen sensor showed the best oxygen sensing properties at 50$0^{\circ}C$. However, oxygen sensing properties were very low at the temperature lower than 30$0^{\circ}C$ due to the lack of oxygen ion mobility and at the temperature higher than $700^{\circ}C$ due 새 intermixing of materials between the layers. Especially, the YSZ sensor operating at $500^{\circ}C$ and oxygen partial pressure above $1.565\times10^4$Pa showed the oxygen sensing properties close to the values predicted by ideal Nernst equation.

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YSZ(yttria-stablilized ziroconia) 박막을 이용한 센서셀의 산소감응

  • 배정운;박준용;황순원;김기동;조영아;전진석;최동수;염근영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.128-128
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    • 1999
  • 산소이온 전도체로 잘 알려진 Yttira-Stabilizd Ziroconia(TSZ)는 연료전지, oxygen pumps, chemical gas sensor 등 다양한 electrochemical divices에 이용되는 고체 전해질의 하나이다. 특히 YSZ는 oxygen 및 oxygen과 평형상태에 있는 gas들을 검출하는 sensor의 electrolyte로서 가장 많이 쓰이고 있다. 현재 상용화되어 있는 YSZ Sensor는 전통적인 bulk 형태의 ceramic으로 제작된 것으로 충분한 ionic conductivity를 얻기 위해서는 $600^{\circ}C$이상의 operating temperature를 필요로 하나 YSZ를 박막으로 제조시 낮은 operating temperature를 뿐만 아니라 sensor의 소형화, 낮은 ohmic loss 및 다양한 응용이 가능한 장점을 가질 수 있다. 본 실험에서는 산소 이온 전도체로서 8mol%-YSZ 고체전해질을 RF-magnetron bias sputtering 법을 이용하여 증착하였다. 제조된 YSZ 박막을 이용한 산소감응 센서셀 구조는 SiO2/Ni-NiO/Pt/YSZ/Pt-기판이다. 센서셀의 정상상태에서의 기전력(electromotive force ; EMF)을 산소분압(Po:1.013$\times$103Ta ~1.013$\times$105Pa)과 측정온도(30$0^{\circ}C$~$700^{\circ}C$)를 변화시키며 측정하였다. 이론적인 기전력과 측정값 사이의 편차는 Po:1.565$\times$104Pa 이하의 산소분압에서는 컸지만 이 이상의 분압에서는 이론치에 근접한 값을 가졌다. 증착한 YSZ와 Ni-NiO 박막의 구조는 X-ray diffractometer(XRD)를 이용하여 결정구조를 알아 보았고, TSZ 박막의 표면 morphology 관찰은 Scanning electron microscopy(SEM) 이용하였다. 박막의 조성분석은 X-ray energy dispersive analysis(EDX)을 사용하였다.

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