• Journal of the Semiconductor & Display Technology
• /
• v.19 no.1
• /
• pp.67-72
• /
• 2020

This study analyzes the method of adhesion and improvement between heat.er and RF filter in PE-CVD equipment through TRIZ method and proposes a solution. TRIZ Solution such as function analysis, 9-window matrix, ASIT, and Root cause analysis were used. The contact temperature between the heater and the RF filter was 20% and the surface temperature was lowered to 5.7℃, suggesting an improvement method for the thermal expansion of the PE-CVD equipment hot zone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.246-249
• /
• 1997

Diamond thin films were deposited on Si wafer from a mixture of CE$_4$ and H$_2$ by RF Plasma CVD. The films were de77sited under the following conditions : discharge power of 500w, H$_2$ flow rate of 30sccm, chanter pressure of 20∼50Torr, and CH$_4$ concentration of 0.5∼2%. The deposition time was 30∼40 hours because of low growth rate. The deposited films were characterized by Scanning Electron Microscopy and X-ray Diffraction method.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 1999.10a
• /
• pp.36-36
• /
• 1999

• The Korean Journal of Ceramics
• /
• v.2 no.4
• /
• pp.212-215
• /
• 1996

This paper focuses the strength and wear resistance of CVD diamond films. The strength of free-standing CVD diamond films synthesized by microwave plasm CVD, DC plasma CVD, RF plasma CVD and arc discharge plasma jet CVD has been measured by three-point bending test. The wear resistance of CVD diamod films has been evaluated by the pin-on-disk type testing. diamond films coated on the base of sintered tungsten carbide pin by hot filament CVD have been rubbed with a sintered diamond disk in muddy water. Volume removed wear of CVD diamond has been compared with stellite, WC alloy and bearing steel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.296-300
• /
• 2002

Thin films of Hydrogenated amorphous carbon(a-C:H) are generally exhibited by high electrical resistivities from 10$^2$ to 10$\^$16/ Ω$.$cm, resulting in an interesting material for high power, high temperature MIS devices applications. The hydrogenated amorphous carbon(a-C:H) films were deposited on silicon and glass using an rf plasma enhanced CVD method. The resultant film properties were evaluated in the respect of material based on r.f. power variation. The hydrogenated amorphous carbon(a-C:H) films of thickness ranging from 30 to 50 m were deposited at the pressure of 1 ton with the mixture of methane and hydrogen. We have used rf-IR( courier transform IR) and AFM(Atomic force microscopy) for determining physical properties and current-voltage(I-V) measurement for electrical Properties.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.2
• /
• pp.49-56
• /
• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.28 no.9
• /
• pp.45-51
• /
• 2014

This work carried out for the effective synthesis characteristics of graphene nanowall film by controlling the electric field in a RF plasma CVD process. For that, the bipolar bias voltage was applied to the substrate such as Si and glass materials for the best chemical reaction of positive and negative charges existing in the plasma. For supplying the seed formation sites on substrate and removing the oxidation layer on the substrate surface, the electron bombardment into substrates was performed by a positive few voltage in hydrogen plasma. After that, hydrocarbon film, which is not a graphene nanowall, was deposited on substrates under a negative bias voltage with hydrogen and methane gases. At this step, the film on substrates could not easily identify due to its transparent characteristics. However, the transparent film was easily changed into graphene nanowall by the final hydrogen plasma treatment process. The resultant raman spectra shows the existence of significant large 2D peaks corresponding to the graphene.

• Journal of the Microelectronics and Packaging Society
• /
• v.8 no.1
• /
• pp.13-18
• /
• 2001

Carbon nanotubes (CNTs) were grown on Ni-coated glass substrates by catalytic chemical vapor depositors (CVD) using RF plasma under $600^{\circ}C$. Various types of CNTs were obtained by different growth temperature, etching period and thickness of Ni catalyst. $NH_3$ or $H_2$ gas was used as a etching gas, then $C_2H_2$ gas was flowed as carbon source. Vertically aligned CNTs with diameter of 150 nm and length of 3 $\mu\textrm{m}$ were observed by SEM. CNTs synthesized by catalytic CVD using RF plasma should be expected to FED emitter.

• Proceedings of the KIEE Conference
• /
• 1989.11a
• /
• pp.149-150
• /
• 1989

Diamond thin films were synthesised from the mixed gases of $CH_4$ and $H_2$ on silicon substrate by R.F plasma CVD and films deposited were investigated by SEM. XRD and Raman spectroscope. From these result, cubo-octahedral diamond particles were synthesised under the following condition: methane concentration. 1.0vol% ; pressure of reactor, 0.3torr ; R.F power, 500W ; reaction time, 20hr.

• Korean Journal of Materials Research
• /
• v.2 no.6
• /
• pp.443-451
• /
• 1992

Effects of various pretreatments on the nucleation of CVD-W deposited on the reactively sputter-deposited TiN was investigated. Incubation period of nucleation and deposition rate decreased by the pretreatment of Ar rf-sputter etching for the depth below 300k, but they increased for the etchig depth over 200A. The preteatment of Ar ion implantation decreased the incubation period of nucleation, but increased deposition rate. Also Si$H_4$flushing pretreatment decreased the incubation period of nucleation slightly due to the absorption of Si by TiN surface.