• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1507_1508
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• 2009

This study proposes a composite right/left-handed transmission line (CRLH-TL) that permits switching between the right-handed (RH) and left-handed (LH) modes using single crystalline silicon (SCS) RF MEMS switches. It is possible to change modes from the RH to LH mode, or vice versa, by controlling the admittance of capacitors and the impedance of inductors using switch operations. The proposed switchable CRLH-TL consists of SCS RF MEMS switches, metal-insulator-metal (MIM) capacitors and shunt inductors. At 8 GHz, the fabricated device shows a phase response of $87^{\circ}$ with an insertion loss of 2.7 dB in the LH mode, and a phase response of $-77^{\circ}$ with an insertion loss of 0.56 dB in the RH mode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.468-472
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• 2011

Conductive $SrMoO_3$ thin films were fabricated by RF magnetron sputtering with the powder-type sputtering target, and annealed for crystallization. When RTP (rapid thermal processing) in vacuum was applied, the fabricated thin films showed the mixed phases of $SrMoO_3$ and $SrMoO_4$, but $SrMoO_3$ phase could be promoted by the lowering of the working pressure during deposition. In order to eliminate $O_2$ gas during deposition and annealing, further lowering of the working pressure and furnace annealing in hydrogen atmosphere were tried. With the optimization of the deposition and annealing conditions, the thin film with nearly single-phase of $SrMoO_3$ was obtained, and it showed good electrical conduction properties with a low resistivity of $2.5{\times}10^{-3}{\Omega}{\cdot}cm$ at room temperature.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.443-451
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• 2010

This paper describes a fully integrated CMOS low-IF mobile-TV RF tuner for Band-III T-DMB/DAB applications. All functional blocks such as low noise amplifier, mixers, variable gain amplifiers, channel filter, phase locked loop, voltage controlled oscillator and PLL loop filter are integrated. The gain of LNA can be controlled from -10 dB to +15 dB with 4-step resolutions. This provides a high signal-to-noise ratio and high linearity performance at a certain power level of RF input because LNA has a small gain variance. For further improving the linearity and noise performance we have proposed the RF VGA exploiting Schmoock's technique and the mixer with current bleeding, which injects directly the charges to the transconductance stage. The chip is fabricated in a 0.18 um mixed signal CMOS process. The measured gain range of the receiver is -25~+88 dB, the overall noise figure(NF) is 4.02~5.13 dB over the whole T-DMB band of 174~240 MHz, and the measured IIP3 is +2.3 dBm at low gain mode. The tuner rejects the image signal over maximum 63.4 dB. The power consumption is 54 mW at 1.8 V supply voltage. The chip area is $3.0{\times}2.5mm^2$.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.19-25
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• 2000

In this paper, we describe RF receiver module for IMT-2000 handset with 5 MHz channel bandwidth. The fabricated RF receiver module consists of Low Noise Amplifier, RF SAW filter, Down-converter, If SAW filter, AGC and PLL Synthesizer. The NF and IIP3 of LNA is 0.8 dB, 3 dBm at 2.14 GHz, conversion gain of down-converter is 10 dB, dynamic range of AGC is 80 dB, and phase noise of PLL is -100 dBc at 100 kHz. The receiver sensitivity is -110 dBm, adjacent channel selectivity is 48 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.9
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• pp.912-918
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• 2014

In this paper, a VHF band multi channel phase discriminator for direction finding equipment using tripple baseline interferometer technique is proposed. In order to measure simultaneously phase difference between IF(Intermediate Frequency) signals of the direction finding equipment, phase discriminator was designed to have parallel structure with multi channel, the phase correlator of phase discriminator was designed with I, Q mixer for reducing number of components. And digital LUT(Look Up Table) was applied for compensating error of phase discriminator due to phase unbalance of RF components. The measured phase accuracy of fabricated phase discriminator was 2 degree RMS(Root Mean Square) at 30 dB SNR condition, which is superior to the phase accuracy of conventional product.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.32-37
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• 2022

As semiconductors become finer, equipment must perform precise and accurate processes to achieve the desired wafer fabrication requirement. Radio frequency power delivery system in plasma system plays a critical role to generate the plasma, and the role of impedance matching unit is critical to terminate the reflected radio frequency power by modifying the impedance of the matching network in the plasma equipment. Impedance matching unit contains one fixed inductor and two variable vacuum capacitors whose positions are controlled two step motors. Controlling the amount of vacuum variable capacitor should be made as soon as possible when the mismatched impedance is detected. In this paper, we present the impedance matching algorithm using the phase sensor.

• Current Optics and Photonics
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• v.5 no.4
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• pp.466-476
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• 2021

Frequency-multiplication technology based on microwave photonic principles can be used to generate microwave and millimeter wave signals with a wide frequency tuning range. However, the existing cascaded external modulation frequency-tupling scheme needs to ensure the phase coherence of the modulated Radio Frequency (RF) signal, while the phase modulation directly limits the frequency tuning range of the external modulation frequency multiplication. In this paper, a novel approach for generating an incoherent frequency 12-tupling signal with cascade modulation is proposed. The structure of cascaded dual-parallel Mach-Zehnder modulators can generate a frequency 12-tupling signal. The proposed structure uses no filter or phase control of the RF driving signal. Microwave photonic frequency-tupling was realized under incoherent conditions. Software simulations and experiments validated the proposed structure and proved that it can generate frequency 12-tupling microwave signals under incoherent conditions. Both the frequency range and reliability of the frequency-tupling system has been improved by the proposed structure.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1621-1623
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• 2004

The $Pb(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4})TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using the RF sputtering method with RF powers of 60,70,80,90[W]. All thin films showed the peaks of the tetragonal phase. Increasing the RF power, dielectric constant and loss of the PZT(52/48)/BST(60/40)] heterolayered thin films were decreased. The thickness ratio of PZT and BST thin films was 1/1. The relative dielectric constant and the dielectric loss of the PZT(52/48)/ BST(60/40) heterolayered thin films were 562 and 13%, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.215-219
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• 2004

ZnO epitaxial films have been grown on a (0001)sapphire substrate by RF magnetron sputtering. The single crystalline ZnO films were grown at the condition of growth rate of about 0.1~0.2 $\mu\textrm{m}$/hr and the substrate temperature of $600^{\circ}C$. The film thickness was about 400~500 nm. The thin film quality and micro-structure have been evaluated by XRD and TEM observation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.4
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• pp.275-280
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• 2006

We propose Doherty power amplifier structure which can be integrated in Silicon RF ICs. Doherty power amplifiers are widely used in RF transmitters, because of their high Power Added Efficiency (PAE) and good linearity. In this paper, it is proposed that a method to replace the quarter wavelength coupler with IQ up-conversion mixers to achieve 90 degree phase shift, which allows on-chip Doherty amplifier. This idea is implemented and manufactured in CMOS 5 GHz band direct-conversion RF transmitter. We measured a 3dB improvement output RF power and linearity.