• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.8-14
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• 1999

The active devices used at microwave frequency have the different phase shift according to input power. Especially, The difference of the phase shift is large in the saturation region of the amplifier. In this paper, we disigned the phase control system for fixing the different phase shift at device. With the high frequency nonlinear amplifier, we fabricated such system that the phase shift to be fixed automatically using the varible phase shifter. The variable phase shifter fixed total phase variation of the circuit using the information that was obtained from the comparison of imputsignal phase with output signal phase. Even though the input signal is 2-tone or FM type, we could estimate and also fix the phase variation on DUT Dynamic range is about 10dB. It has been experimented at 1960MHz using Teflon (H=31mil, ${\varepsilon}r$=3.2)

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.23-27
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• 2004

The $Al_xTa_{1-x} (x=0.0{\~}1.0)$ alloy thin films were deposited by RF-magnetron sputtering system, and the crystal quality, surface morphology, and electrical properties were examined using XRD, AFM, 4-point probe techniques in this study. The thin films were grown according to the alloy compositions first, and the effects of film thickness and mask patterns were investigated afterwards. Also, the heating characteristics were examined by heat controller. The obtained results showed that the high electrical resistivity was obtained for Al content $x=6.63at\%$, and the even higher resistivity was accomplished for the samples with smaller thickness and narrower width. The heating temperature demonstrated the identical trend to the electrical properties, and the highest heating temperature ($400^{\circ}C$) and output power ($12.6W/cm^2$) were obtained for the sample with Al content $x=6.63\%$, film thickness d=500 nm, film width w=1.5 mm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.7
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• pp.1538-1543
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• 2013

In this paper, a novel split ring resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator. Oscillator using proposed split ring resonator is designed, it has improved phase noise characteristics. At the fundamental frequency of 5.8GHz, 7.22dBm output power and -83.5 dBc@100kHz phase noise have been measured for oscillator with split ring resonator. The phase noise characteristics of oscillator is improved about 9.7dB compared to one using the general ${\lambda}/4$ microstrip resonator. Next, we designed voltage controlled oscillator using proposed split ring resonator with varactor diode. The VCO has 125MHz tuning range from 5.833GHz to 5.845GHz, and phase noise characteristic is -118~-115.5 dBc/Hz@100KHz. Due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• Journal of the Institute of Convergence Signal Processing
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• v.13 no.1
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• pp.39-43
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• 2012

60GHz band RF transceiver was made with the NRD waveguide structure for the point- to-point communication. A dielectric line that of comprising NRD waveguide was the milling process was not easy because a material gets soft, and also compression and expansion according to a temperature were serious, so this line was not suitable for the device in which the resonance characteristic was important. In addition, the thing for comprising amplification module was difficult in the NRD waveguide structure. In this paper, a way in which to overcome mentioned in upper part, the transceiver was made by below technology. Components in which the resonance characteristic was not important were made with the NRD waveguide hybrid IC, and components in which the resonance characteristic was important were made with waveguide. An amplifier packaged and modularizing the bare chip, it equipped at the NRD waveguide within. Manufactured transceiver communicated with FDD method, and it had 10dBm output power, and -60dBm minimum receive sensitivity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.3
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• pp.569-577
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• 1999

A wideband RF receiver for satellite mobile communications system was fabricated and evaluated of performance in low noise amplifier and high gain amplifier. The low noise amplifier used to the resistive decoupling and self-bias circuits. The low noise amplifier is fabricated with both the RF circuits and the self-bias circuits. Using a INA-03184, the high gain amplifier consists of matched amplifier type. The active bias circuitry can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilized resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 55 dB in gain, 50.83 dBc in a spurious level and less than 1.8 : 1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio is a 43.15 dB/Hz at a 1 KHz from 1537.5 MHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.4
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• pp.41-46
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• 2012

This paper suggested that the frequency adaptive antenna matching network design between AP and WLAN(Wireless Local Area Network) terminal for improving performance. The internet data service of the WLAN terminal is communicated through the AP and AP broadcasts the beacon signal including the assigned frequency channel. at that time the antenna matching network path is controlled beacon information after the WLAN terminal searching and synchronization a beacon information. and then the WLAN terminal communicate with AP. controlling the antenna matching network path according to channel information, The WLAN terminal is expected to improve RF output power and sensitivity performance. The VSWR(Voltage Standing Wave Ratio) performance of the designed antenna matching network is measured to about 1.1 ~ 1.2 and then it is operated by the channel information of the AP.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.345-353
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• 2011

An 1.485 Gbit/s video signal transmission system using the carrier frequency of H-band(220~325 GHz) was implemented and demonstrated for the first in domestic. The RF front-end was composed of Schottky barrier diode sub-harmonic mixers(SHM) and frequency triplers, and diagonal horn antennas for transmitter and receiver, respectively. The transmitted carrier frequency of 246 GHz was implemented in the H-band, and LO frequencies of H-band SHM is 120 GHz and 126 GHz for transmit and receive chains, respectively. The modulation scheme is ASK(Amplitude Shift Keying) where IF frequency is 5.94 GHz and the envelop detection was used in heterodyne receiver architecture, and direct detection receiver using ZBD(Zero Bias Detector) was implemented as well. The 1.485 Gbit/s video signal with HD-SDI format was successfully transmitted over wireless link distance of 5 m and displayed on HDTV at the transmitted average output power of 20 ${\mu}W$.

• Journal of Aerospace System Engineering
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• v.16 no.5
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• pp.86-93
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• 2022

Generally, a deployable solar panel is used primarily to achieve sufficient power output to perform the mission. However, temperature distribution on the antenna reflector may increase due to the shading effect induced by the presence of the deployable solar panels. Appropriate thermal design is critical to minimize the thermal deformation of the mesh antenna reflector in harsh on-orbit thermal environments to ensure remote frequency (RF) performance. In this paper, we proposed a dual-surface primary reflector consisting of a mesh antenna and a flexible fabric membrane sheet. This design strategy can contribute to thermal stabilization by using a flexible solar panel on the rear side of membrane sheet to reduce the temperature distribution caused by the deployable solar panel. The effectiveness of the mesh antenna design strategy investigates through on-orbit thermal analysis.

• Transactions on Semiconductor Engineering
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• v.2 no.3
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• pp.1-5
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• 2024

This paper presents a crystal-less reference clock recovery (CR) frequency synthesizer with compensation designed for Bluetooth Low Energy (BLE) Smart-tag applications, operating at frequencies of 32, 72, and 80MHz. In contrast to conventional frequency synthesizers, the proposed design eliminates the need for external components. Using a single-ended antenna to receive a minimal input power of -36dBm at a 2.4GHz signal, the CR synthesizes frequencies by processing the RF signal received through a Low Noise Amplifier ( L N A ) . This approach allows the system to generate a reference clock without relying on a crystal. The received signal is amplified by the LNA and then input to a 16-bit ACC (Automatic Clock Compensation) circuit. The ACC compares the frequency of the received signal with the oscillator output signal, using the synthesis of a 32MHz reference clock through a frequency compensation method. The oscillator is constructed using a Ring Oscillator (RO) with a Frequency Divider, offering three different frequencies (32/72/80MHz) for various system components. The proposed frequency synthesizer is implemented using a 55-nm CMOS process.