• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3126-3132
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• 2023

To meet the increasing heating needs of the China Fusion Experimental Tokamak Reactor (CFETR), the output power in each Lower Hybrid Current Drive (LHCD) transmission line should be increased from 250 kW to 500 kW. Therefore, a new high-power water load must be developed for the 4.6 GHz 500 kW LHCD system. This paper aims to report the most recent research progress of the water load: aluminum nitride (AlN) ceramic is used as the media material to isolate the water and vacuum, and the radio frequency (RF) simulation results show that the return loss of the water load is less than -25dB at 4.6 GHz over a wide temperature range. Under 500 kW continuous wave (CW) operation, the maximum temperatures of the ceramic and water are separately 67 ℃ and 62 ℃, resulting in thermal deformation of the ceramic of approximately 0.003 mm. Moreover, the AlN water load was tested on the 4.6 GHz 250 kW high-power test bench and found to work well with low reflected power.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.18 no.7
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• pp.2047-2066
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• 2024

In order to improve the coverage and achieve massive spectrum access, non-orthogonal multiple access (NOMA) technology is applied in millimeter wave massive multiple-input multiple-output (mMIMO) communication network. However, the power assumption of active sensors greatly limits its wide applications. Recently, Intelligent Reconfigurable Surface (IRS) technology has received wide attention due to its ability to reduce power consumption and achieve passive transmission. In this paper, spectral efficiency maximum problem in the millimeter wave mMIMO-NOMA system with IRS is considered. The sparse RF chain antenna structure is designed at the base station based on continuous phase modulation. Furthermore, a joint optimization problem for power allocation, power splitting, analog precoding and IRS reconfigurable matrices are constructed, which aim to achieve the maximum spectral efficiency of the system under the constraints of user's quality of service, minimum energy harvesting and total transmit power. A three-stage iterative algorithm is proposed to solve the above mentioned non-convex optimization problems. We obtain the local optimal solution by fixing some optimization parameters firstly, then introduce the relaxation variables to realize the global optimal solution. Simulation results show that the spectral efficiency of the proposed scheme is superior compared to the conventional system with phase shifter modulation. It is also demonstrated that IRS can effectively assist mmWave communication and improve the system spectral efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.357-358
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• 2005

Compact power amplifier modules (PAM) for WCDMA/KPCS and GSM/WCDMA dual-band applications based on multilayer low temperature co-fired ceramic (LTCC) substrates are presented in this paper. The proposed modules are composed of an InGaP/GaAs HBT PAs on top of the LTCC substrates and passive components such as RF chokes and capacitors which are embedded in the substrates. The overall size of the modules is less than 6mm $\times$ 6mm $\times$ 0.8mm. The measured result shows that the PAM delivers a power of 28 dBm with a power added efficiency (PAE) of more than 30 % at KPCS band. The adjacent-channel power ratio (ACPR) at 1.25-MHz and 2.25-MHz offset is -44dBc/30kHz and -60dBc/30kHz, respectively, at 28-dBm output power. Also, the PAM for WCDMA band exhibits an output power of 27 dBm and 32-dB gain at 1.95 GHz with a 3.4-V supply. The adjacent-channel leakage ratio (ACLR) at 5-MHz and 10-MHz offset is -37.5dBc/3.84MHz and -48dBc/3.84MHz, respectively. The measured result of the GSM PAM shows an output power of 33.4 dBm and a power gain of 30.4 dB at 900MHz with a 3.5V supply. The corresponding power added efficiency (PAE) is more than 52.6 %.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.1
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• pp.42-48
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• 2011

In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.273-279
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• 2013

In this paper, a novel split ring resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed split ring resonator. At the fundamental frequency of 5.8GHz, 7.22dBm output power and -83.5 dBc@100kHz phase noise have been measured for oscillator with split ring resonator. The phase noise characteristics of oscillator is improved about 9.7dB compared to one using the general ${\lambda}$/4 microstrip resonator. Because it is possible that varactor diode or lumped capacitor is placed on the gaps of split ring resonator, resonant frequency can be controlled by bias voltage. We can design voltage controlled oscillator using proposed split ring resonator. Thus, due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1581-1586
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• 2012

In this paper, a novel resonator using ring type DGS is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed DGS resonator. The ring type DGS resonator is composed of DGS cell etched on ground plane under $50{\Omega}$ microstrip line. At the fundamental frequency of 5.8GHz, 7.6dBm output power and -82.7 dBc@100kHz phase noise have been measured for oscillator with ring type DGS resonator. The phase noise characteristics of oscillator is improved about 9.5dB compared to one using the general ${\lambda}/4$ microstrip resonator. Because it is possible that varactor diode or lumped capacitor is placed on the gaps of ring type DGS, resonant frequency can be controlled by bias voltage. We can design voltage controlled oscillator using proposed ring type DGS resonator. Thus, due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• Journal of Advanced Navigation Technology
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• v.9 no.2
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• pp.103-109
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• 2005

This paper presents the design of a broadband hybrid mixer using dual-gate FET topology with a low-pass filter which improves return loss of output to isolate RF and LO signal. The low-pass filter shows the isolation with RF and LO signal of better than 40 dBc from 1.5 GHz to 5.5 GHz. The dual-gate mixer which has been designed by using cascade topology operates when the lower FET is biased in linear region and the upper FET is in saturation region. The input matching circuit has been designed to have conversion gain from 1.5 GHz to 5.5 GHz. The designed mixer with low-pass filter shows the conversion gain of better than 7 dB from 1.5 GHz to 5.5 GHz at the low LO power level of 0 dBm with the fixed IF frequency of 21.4 MHz.

• Journal of IKEEE
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• v.24 no.1
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• pp.368-371
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• 2020

In this paper, we propose a linear tapered slot rectifying antenna for a portable UHF-band RFID system. Since the proposed rectifying antenna does not use a dielectric substrate, the planar antenna is implemented with a thin metal thickness. The rectifier circuit converts input RF power into output DC voltage using a voltage doubler circuit based on two anti-parallel schottky diodes. The rectifying antenna is integrated by the voltage doubler circuit into a linear tapered slot antenna. For conjugate impedance matching of the rectifying circuit and the linear tapered slot antenna, the source-pull method was utilized by adjusting the angle of the tapered slot and the length of the antenna feed line. The proposed antenna prototype has been verified with the electrical and radiation characteristics through RF-DC conversion and far-field radiation test in open space measurement environment. Finally, the proposed antenna is realized to 0.23-wavelength (75 mm) and 0.18-wavelength (60 mm) at 915 MHz center frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.7 s.110
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• pp.659-664
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• 2006

This paper reports a high power 60 GHz push-push oscillator fabricated using $0.12{\mu}m$ metamorphic high electron-mobility transistors(mHEMTs). The devices with a $0.12{\mu}m$ gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, an $f_T$ of 170 GHz, and an $f_{MAX}$ of more than 300 GHz. By combining two sub-oscillators having $6{\times}50{\mu}m$ periphery mHEMT, the push-push oscillator achieved a 6.3 dBm of output power at 59.5 GHz with more than - 35 dBc fundamental suppression. The phase noise of - 81.5 dBc/Hz at 1 MHz offset was measured. This is one of the highest output power obtained using mHEMT technology without buffer amplifier, and demonstrates the potential of mHEMT technology for cost effective millimeter-wave commercial applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.8 s.111
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• pp.707-712
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• 2006

In this paper, dual bias control circuit and PBG(Photonic BandGap) structure have been employed to improve PAE(Power Added Effciency) of the Doherty amplifier on Input power level. The gate and drain bias voltage has been controlled with the envelope of the input RF signal and PBG structure has been employed on the output port of Doherty amplifier. The proposed Doherty amplifier using dual bias controlled circuit and PBG has been improved the average PAE by 8%, $IMD_3$ by -5 dBc. And proposed Doherty amplifier has a high efficiency more than 30% on overall input power level, respectively.