• 제목/요약/키워드: RF magnetron sputtering method

검색결과 427건 처리시간 0.026초

RF-Sputtering법에 의한 CoSi2/Si 박막 형성에 관한 특성 (The Characteristic of Formation CoSi2/Si Thin Film by the RF-Sputtering Method)

  • 조금배;이강연;최연옥;김남오;정병호
    • 전기학회논문지
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    • 제59권7호
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    • pp.1255-1258
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    • 2010
  • In this paper, the $CoSi_2$ thin films with thicknesses of about $5{\mu}m$ were deposited on n-type silicon (111) substrates by RF magnetron sputtering method using a $CoSi_2$ target (99.99%). The flow rate of argon of 50 sccm, substrate temperature of $100^{\circ}C$, RF power of 60 watts, deposition time of 30 minutes, and the vacuum of $1\times10^{-6}$ Torr. The annealing treatments of the $CoSi_2$ thin film were performed from 500, 700 and $900^{\circ}C$ for 1h in air ambient by an electric furnace. In order to investigate the $CoSi_2$ thin film X-ray diffraction patterns were measured using the X-ray diffractometer (XRD). The structure of the thin films were investigated by using scanning the electron microscope (SEM) were used for review. The surface morphology of the thin films was measured with a atomic force microscopy (AFM). Temperature dependence of sheet resistivity and property of Hall effect was measured in the $CoSi_2$ thin film.

불평형 마그네트론 스파터링에 의해 형성된 MgO 박막의 글로우 방전특성에 관한 연구 (A Study on the Glow Discharge Characteristics of MgO thin film prepared by Unbalanced Magnetron Sputtering)

  • 김영기;박정태;고광식;김규섭;박정후;조정수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 E
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    • pp.2236-2238
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    • 1999
  • This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by RF unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP. The minimum discharge voltage is obtained for the sample of substrate holder bias voltage -10V. The main factors that improves the discharge characteristics by applied bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process Moreover, the anti-sputtering characteristics of MgO thin film by UBMS is more excellent than that of balanced magnetron sputtering(BMS) and E-beam evaporation method.

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Ampoule-tube 법을 이용한 P와 As 도핑 p형 ZnO 박막의 미세구조와 Hall 특성 (Microstructures and Hall Properties of p-type Zno Thin Films with Ampouele-tube Method of P and As)

  • 소순진;임근영;유인성;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.141-142
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    • 2005
  • To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $300^{\circ}C$ and 5.2 mTorr, and the purity of target is ZnO 5N. The thickness of ZnO thin films was about $1.9{\mu}m$ at SEM analysis after sputtering process. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and $700^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is $700^{\circ}C$, 3hr. Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

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ZnO 박막과 금속전극과의 계면특성조사 (The Characterization of Interfaces between ZnO Thin Films and Metal Electrodes)

  • 박성순;임원택;이창효
    • 한국진공학회지
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    • 제7권3호
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    • pp.201-207
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    • 1998
  • 본 연구는 rf reactive magnetron sputtering 방법으로 증착한 ZnO 박막을 압전진동 자로 제작하였을 때 발생하는 금속전극과의 계면특성에 대해 조사하였다. 이때 ZnO 박막은 금속 아연 target을 산소분위기에서 sputtering하여 얻었다. 미리 얻은 최적성장조건으로 Cr/ZnO/Cr의 구조을 갖는 압전 진동자를 제작한 후, 금속전극과 ZnO 박막과의 계면특성을 분석하였다. 제작된 압전진동자는 I-V 측정, AES depth profile, SEM, C-V 측정등을 이용 하여 분석하였고, 이러한 분석 결과 금속전극과 ZnO 박막 사이에 $SiO_2$ 확산방지막을 쌓은 Cr/ $SiO_2$/ZnO/Cr의 구조로 ZnO 압전진동자를 제작했을 때 좋은 특성을 보임을 알 수 있었 다. 그리고, 이러한 사실은 제작된 진동자를 구동시키고 이에 대한 인가진동수에 따른 진동 변위를 측정해보므로써 확인할 수 있었다.

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Sputtering법으로 성장한 PZT 박막의 Target의 Pb Excess에 따른 전기적 특성에 관한 연구 (Electrical characteristic of PZT thin film deposit by Rf-magnetron sputtering as Pb excess ratio of target)

  • 이규일;강현일;박영;박기엽;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.570-573
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    • 2002
  • Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

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RF-Magnetron Sputtering에 의하여 ITO 유리 위에 성장된 $SrTiO_3$박막의 열처리 특성 (Heat treatment effects of $SrTiO_3$ thin films grown on ITO glasses by RE-magnetron sputtering method)

  • 김화민;이병로
    • 한국진공학회지
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    • 제10권4호
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    • pp.416-423
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    • 2001
  • $SrTiO_3$ 박막의 미세구조와 광학적 및 유전적 특성에 대한 열처리 효과들이 조사되었다. $SrTiO_3$ 박막은 RF-마그네트론 스퍼터링 방법에 의하여 상온의 ITO유리 위에 성장되었으며, 성장된 박막들은 산소 분위기의 여러 온도에서 열처리되었다. X선 회절 패턴을 분석한 결과 상온에서 제작된 as-deposited박막은 비정질 상태로 나타났으며, 450-$600^{\circ}C$에서 열처리한 시료에서는 pyrochlore 구조의 결정 피크들이 우세하게 관측되었다. 그리고 $650^{\circ}C$에서 열처리한 시료에서는 perovskite 구조가 우세하게 나타나는 것이 관측되었다. 특히 $650^{\circ}C$에서 열처리한 시료의 경우는 박막의 미세 결정구조 변화와 더불어 광학적 띠간격이 크게 변하는 것이 광투과도 측정으로부터 관측되었다. 그리고 $600^{\circ}C$에서 열처리된 시료의 경우는 $272^{\circ}C$에서 상전이 피크가 관측되는 반면, $650^{\circ}C$에서 열처리된 시료에서는 $310^{\circ}C$ 부근에서 유전 분산이 관측되었다.

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Electronic, Optical and Electrical Properties of Nickel Oxide Thin Films Grown by RF Magnetron Sputtering

  • Park, Chanae;Kim, Juhwan;Lee, Kangil;Oh, Suhk Kun;Kang, Hee Jae;Park, Nam Seok
    • Applied Science and Convergence Technology
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    • 제24권3호
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    • pp.72-76
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    • 2015
  • Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$ for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below $300^{\circ}C$ had the NiO phase, but, at $400^{\circ}C$, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below $300^{\circ}C$ were about 3.7 eV, but that at $400^{\circ}C$ should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below $300^{\circ}C$ showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at $400^{\circ}C$ showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.

Off-Axis RF Magnetron Sputtering 방법에 의한 $Ba_{0.5}Sr_{0.5}TiO_3$ 박막의 제조 (Preparation of $Ba_{0.5}Sr_{0.5}TiO_3$ Thin Films by Off-Axis RF Magnetron Sputtering)

  • 신진;한택상;김영환;이재준;박순자;오명환;최상삼
    • 한국세라믹학회지
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    • 제31권12호
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    • pp.1429-1436
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    • 1994
  • We have prepared Ba0.5Sr0.5TiO3 thin films on Si substrate without buffer layer. Deposition was carried out by off-axis rf magnetron sputtering method using Ba0.5Sr0.5TiO3 stoichiometric target. The substrate temperature was changed from 40$0^{\circ}C$ to $700^{\circ}C$ during deposition. As the substrate temperature increased, relative intensity of (110) peak increased up to $600^{\circ}C$, however preferred orientation changed from (110) to (h00) beyond $650^{\circ}C$ of substrate temperature. Deposited films showed microstructures with fine grains whose diameters are less than 100 nm, and columnar structure was observed in the cross-sectional SEM micrograph. AES depth profile showed no significant diffusion at the interfacial reaction area. The effective dielectric constant of films showed maximum value at $600^{\circ}C$, and the leakage current increased with increasing substrate temperature, which may be ascribed to the crystallization of amorphous phases at grain boundary.

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Process effects on morphology, electrical and optical properties of a-InGaZnO thin films by Magnetic Field Shielded Sputtering

  • 이동혁;김경덕;홍문표
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.217-217
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    • 2016
  • The amorphous InGaZnO (a-IGZO) is widely accepted as a promising channel material for thin-film transistor (TFT) applications owing to their outstanding electrical properties [1, 2]. However, a-IGZO TFTs have still suffered from their bias instability with illumination [1-4]. Up to now, many researchers have studied the sub-gap density of states (DOS) as the root cause of instability. It is well known that defect states can influence on the performances and stabilities of a-IGZO TFTs. The defects states should be closely related with the deposition condition, including sputtering power, and pressure. Nevertheless, it has not been reported how these defects are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOIs) can be generated by electron attachment in oxygen atom near target surface and then accelerated up to few hundreds eV by a self-bias; at this time, the high energy bombardment of NOIs induce defects in oxide thin films. Recently, we have reported that the properties of IGZO thin films are strongly related with effects of NOIs which are generated during the sputtering process [5]. From our previous results, the electrical characteristics and the chemical bonding states of a-IGZO thin films were depended with the bombardment energy of NOIs. And also, we suggest that the deep sub-gap states in a-IGZO as well as thin film properties would be influenced by the bombardment of high energetic NOIs during the sputtering process.In this study, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process to prevent the NOIs bombardment effects and present how much to be improved the properties of a-IGZO thin film by this new deposition method. We deposited a-IGZO thin films by MFSS on SiO2/p-Si and glass substrate at various process conditions, after which we investigated the morphology, optical and electrical properties of the a-IGZO thin films.

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RF 마그네트론 스퍼터를 이용한 ATO 박막의 열처리 효과 (The effects of annealing of the ATO films prepared by RF magnetron sputtering)

  • 박세용;이성욱;박미주;김영렬;홍병유
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.270-271
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    • 2008
  • Antimony (6 wt%) doped tin oxide (ATO) films to improve conductivity were deposited on 7059 coming glass by RF magnetron sputtering method for application to transparent electrodes. The ATO film was deposited at a working pressure of 5 mTorr and RF power of 175 W. We investigated the effects of the post-annealing temperature on structural, electrical and optical properties of the ATO films. The films were annealed at temperatures ranging from $300^{\circ}C$ to $600^{\circ}C$ in step of $100^{\circ}C$ using RTA equipment in vacuum ambient. X-ray diffraction (XRD) measurements showed the ATO films to be crystallized with a strong (101) preferred orientation as the annealing temperature increased. Electrical resistivity decreased significantly with annealing temperatures up to $600^{\circ}C$. ATO film annealed at temperature of $600^{\circ}C$ showed the lowest resistivity of $5.6\times10^{-3}\Omega$-cm. Optical transmittance increased significantly with annealing temperatures up to $600^{\circ}C$. The highest transmittance was 90.8 % in the visible range from 400 to 800 nm.

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