• Journal of Satellite, Information and Communications
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• v.12 no.4
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• pp.50-55
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• 2017

In this paper, the design of the RF system monitoring and control system of KUS (KASS: KASS Uplink Station) which constitutes KASS (Korea Augmentation Satellite System) is described. The Korean satellite calibration system is named KASS and aims to develop the SBAS system of the APV-1 level SoL service level and the CAT-1 test operation technology. Software and hardware development environment, function and algorithm of supervisory control device, structure of supervisory control device, and user interface were designed to implement KUS / RFS monitoring control device. We have secured the stability and reliability of the system by using the monitoring and control system design of the COMS (Communication Ocean & Meteorological Satellite) and the Korea Satellite 5A / 7 control system, which has already been used for the design of the surveillance control system. In addition, we have made it possible to provide the user interface according to the actual operator's request more conveniently.

• Electronics and Telecommunications Trends
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• v.21 no.6 s.102
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• pp.202-211
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• 2006

본 논문에서는 2.4GHz 마그네트론을 이용하는 RF 전구에 대하여 동 대역을 사용하는IEEE 802.11b 기반의 무선랜과 전파간섭을 분석하였다. RF 전구가 무선랜에 미치는 전파간섭을 분석한 결과, LOS 환경(무선랜 수신전력 -63dBm/MHz)에서는 무선랜 채널 9, 10에 약 1~2Mbps의 전송속도 저하를 유발하였으며, Non-LOS 환경(무선랜 수신전력 -78dBm/MHz)에서는 무선랜 채널 6-11번에 통화절단 현상을 야기하였다. 그러나, RF 전구 수에 따른 간섭전력의 누적효과는 없는 것으로 나타났다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.902-905
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• 2006

This paper presents a new RF testing scheme based on a design-for-testability (DFT) method for measuring functional specifications of RF integrated circuits (IC). The proposed method provides input impedance. gain, noise figure. input voltage standing wave ratio (VSWR) and output signal-to-noise ratio (SNR) of a low noise amplifier (LNA). The RF test scheme is based on theoretical expressions that produce the actual RF device specifications by output DC voltages from the DR chip.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.356-357
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• 2007

In this paper, we developed an integrated miniaturized device which acquires and transmits the signal of ECG an interested heartbeat and body's temperature and humidity. Using an amplifier circuit on the electrodes and the radio frequency transmission, the developed system dispenses with the use of cables among the electrodes, amplifier, and the post processing system. The sensor signals are transmitted to the RF-wireless terminal that was developed using the micro controller Aduc812, LCD, RF-module (frequency 424MHz, 9600-bps). In results, the developed system improves not only the signal-to-noise ration in dynamic ECG & and body's temperature and humidity measurement, but also the user convenience.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.422-423
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• 2005

RF Micro switches is a miniature device or an array of integration devices and mechanical components and fabricated with Ie batch-processing techniques. RF Micro switches application area are in phased arrays and reconfigurable apertures for defence and telecommunication systems, switching network for satellite communication, and single-pole double throw switches for wireless application. Recently, RF Micro switches have been developed for the application to the milimeter wave system. RF Micro switches offer a substantilly higher performance than PIN diode or FET switches. In this paper, SPDT(single-pole-double-throw) switch are designed to use 10 GHz. Actuation voltage and displacement are simulated by tool.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.68-71
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• 2021

In this paper, GaN-SBD devices with excellent breakdown voltage and frequency characteristics for use in high-power microwave wireless power transmission has been modeled for PSpice circuit simulation. The RF-DC conversion circuits were simulated and compared with a commercial Si-SBD device. Although the modeled GaN-SBD devices had lower RF-DC conversion efficiency compared to Si-SBD at 2.4 and 5.8 GHz, it was confirmed through PSpice circuit simulations that they can be used sufficiently according to the required application circuit in a high power situation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.6
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• pp.573-578
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• 2004

EED consists of bridgewire, explosive charge, lead pins and metal case. If a firing signal is injected to EED， the explosive charge in EED is initiated by heating of bridgewire. Electromagnetic waves radiated from high power transmitters or radars can also cause unexpected firing of EED. Therefore, EMC design and test requirements for EED in military specifications are established and applied. This report describes the characteristics of RF sensitivity fur a firing fuse which is used fur EMC test instead of a real EED installed in aircraft. RF firing level of the fuse was predicted using transmission line(TL) theory. n sensitivity and RF sensitivity specified in military specifications were measured.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.411-414
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• 2014

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.06a
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• pp.14-15
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• 2006

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.11-15
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• 2001

In this paper, hermetic sealing technology was studied for wafer level packaging of the RF-MEMS devices. With the flip-chip bonding method. this non-conductive B-stage epoxy sealing will be profit to the MEMS device sealing. It will be particularly profit to the RF-MEMS device sealing. B-stage epoxy can be cured by 2-step and hermetic sealing can be obtained. After defining 500 $\mu\textrm{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was, then, aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line could be maintained during the sealing process. The height of the seal-line was controlled within $\pm$0.6 $\mu\textrm{m}$ in the 4 inches wafer and the bonding strength was measured to about 20MPa by pull test. The leak rate, that is sealing characteristic of the B-stage epoxy, was about $10^{-7}$ cc/sec from the leak test.