• 융합신호처리학회논문지
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• 제7권3호
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• pp.87-94
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• 2006

유비쿼터스 홈네트워크 ( uHome-net) 구현을 위해서는 다양한 센서들이 통합된 유무선 센서 네트워크에 연결될 수 있어야 한다. 본 논문은 제어 네트워크에 널리 사용되고 있는 LonWorks 기술을 uHome-net의 유무선 센서 네트워크에 적용한 사례를 소개하고, LonTalk 프로토콜이 탑재된 뉴런칩, 433.92MHz RF 트랜시버, 센서와 응용 프로그램으로 구성되는 LonRF 디바이스의 설계 및 응용 서비스 구현 결과를 설명한다. LonRF 디바이스의 응용 예로 실내에서 물체의 3차원 좌표를 측정할 수 있고 uHome-net과 연동되는 LonRF 스마트배지를 개발하였다. LonRF 디바이스 기반의 위치인식 서비스, 원격검침서비스, 원격경비서비스 등의 홈네트워크 서비스를 uHome-net 테스트베드에 구현하였다. 본 연구는 LonWorks 기술 기반의 센서 네트워크가 유비쿼터스 홈네트워크의 제어 네트워크로 적용할 수 있고, 개발된 LonRF 디바이스가 센서 네트워크의 무선 노드로 사용될 수 있음을 보였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 B
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• pp.540-543
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• 2003

This paper presents design and manufacture of RF type non-contact radiological dosage measuring device. It also concerns on the broad out-line and the ways of improvement about RF type non-contact radiation measuring device. Measuring radiological dosage with non-contact RF, the stability and efficiency of the measure have been improved by reforming constant current circuit. Furthermore, applying communication protocol in process makes it possible to achieve faster and more accurate communication than old circuit. On the base of those, RF type non-contact radiological dosage measuring device which consists of radiological dosage measuring module and Reader module has been designed and manufactured. While testing communication against embodied device, the possibility of the field application could be confirmed.

• 전자통신동향분석
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• 제36권3호
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• 제어로봇시스템학회논문지
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• 제10권6호
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• pp.566-573
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• 2004

This paper describes the ubiquitous home network (uHome-net) testbed and LonRF intelligent devices based on LonWorks technology. These devices consist of Neuron Chip, RF transceiver, sensor, and other peripheral components. Using LonRF devices, a home control network can be simplified and most devices can be operated on LonWorks control network. Also, Indoor Positioning System (IPS) that can serve various location based services was implemented in uHome-net. Smart Badge of IPS, that is a special LonRF device, can measure the 3D location of objects in the indoor environment. In the uHome-net testbed, remote control service, cooking help service, wireless remote metering service, baby monitoring service and security ＆ fire prevention service were realized. This research shows the vision of the ubiquitous home network that will be emerged in the near future.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.202-202
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• 1999

No Abstract.see full/text

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1237-1241
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• 2003

In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes lot vortical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. The packaged RF device has a reflection loss under 22 〔㏈〕 and a insertion loss of -0.04∼-0.08 〔㏈〕. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 D
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• pp.2173-2175
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• 2004

This paper addresses a telemetering device which uses RF transceivers and a mobile-phone. Locally collected data arc encoded with a BCH error correcting code and transferred to a receiver through a RF module. The receiver-side RF module decodes the transferred data and then repetes them to a mobile-phone. Lastly, the mobile-phone hands over the data through a wireless phone network to a host computer in the internet.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.751-754
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• 2003

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

• 한국산학기술학회논문지
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• 제11권9호
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• pp.3435-3440
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• 2010

표면탄성파를 이용한 RF소자의 성능을 단순히 작동 유무로만 평가할 수 있는 전기적인 성능 평가방법과 달리 위치에 따른 표면탄성파의 형성 정도를 실시간으로 검사할 수 있는 광학적 방법을 제시하였다. 광학적 방법을 이용한 표면 탄성파의 측정 조건과 한계를 제시하였고 간섭 및 회절 현상을 이용하여 RF신호의 입력 유무에 따른 광학적 해석을 하였다. 단일 모드 레이저를 이용하여 중심 주파수가 105MHz인 중계기 필터의 동작을 실험적으로 측정하고 이론적으로 분석하였다. 본 논문에서는 다기능 서비스를 제공하는 복합 주파수 RF 모듈의 고품질화를 위한 방법으로 표면탄성파의 에너지 분포를 시각화하고 실시간으로 평가할 수 있는 광학적 방법을 제시하였다.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2004년도 춘계학술대회 논문집
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• pp.1362-1364
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• 2004

Recently, GPS device is used in various industries. GPS can calculate a moving train's velocity, location, and direction. In this paper, we examine a train approaching alarm device's application, possibility, and merits in the train system. Especially, we investigate solubility of trouble caused by using GPS and RF system for detecting the train's velocity, the location and direction recognition.