• 한국재료학회지
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• 제13권7호
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• pp.465-472
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• 2003

Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Ge/Ti/Pt ohmic contact minimum specific contact resistivity of $3.7${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by rapid thermal annealing at $^400{\circ}C$/10 sec. In the Pd/Ge/Ti/Au ohmic contact, minimum specific contact resistivity of $1.1${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by annealing at 40$0^{\circ}C$/10 sec but the ohmic performance was degraded with increasing annealing temperature due to the reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact (high-$10^{-6}$ /$\Omega$$\textrm{cm}^2$) were maintained after annealing at $450^{\circ}C$/10 sec. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.5 ㎓ and 65.0 ㎓, respectively, and maximum oscillation frequencies were 50.5 ㎓ and 51.3 ㎓, respectively, indicating very successful high frequency operations.

• 정보저장시스템학회논문집
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• 제3권4호
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• pp.160-166
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• 2007

In this paper, the measured electrical resistance method is proposed to analyze the ramp-tab contact during the load/unload (L/UL) process. Since this method supplies the voltage change due to the resistance change, we can easily and conveniently identify the ramp-tab contact from the acoustic emission (AE) signal. At first, we carefully deposit the conductive material on the surface of the conventional ramp by sputtering method. The ratio frequency (RF) magnetron co-sputtering system is applied to accomplish the deposited double-layers on the ramp surface. One layer is the stainless steel for the conductive layer and the other is the titanium layer for the cohesive function between the ramp surface and the stainless steel layer. In order to guarantee the stiffness and damping properties of the original ramp, the deposited conductive layer is intended to have very thin thickness. After integration the proposed ramp device into the L/UL system and networking the electrical resistance circuit, the L/UL performance is experimentally evaluated by comparing the measured electrical resistance signal and AE signal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.167-171
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• 2003

We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

• 한국위성정보통신학회논문지
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• 제10권3호
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• pp.1-5
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• 2015

최근 무선 에너지 하비스팅 기술이 센서와 같은 소형 IoT 디바이스들의 크기 제한으로 인한 배터리 부족 문제의 해결방법으로 각광을 받고 있다. 이 기술이 기존의 인지무선 네트워크에 적용된다면 인지 유저들의 운용시간 증가로 인한 네트워크 처리량의 증가를 기대할 수 있다. 본 논문에서는 인지 유저(Cognitive User)가 근처에서 동작 중인 우선 유저(Primary User)의 특정 거리 안에 존재할 때 우선 유저가 전송한 통신 신호로부터 무선 에너지 하비스팅을 하고 특정 거리 밖에 존재할 때 비어있는 채널을 골라 통신을 하도록 한다. 이 때 우선 유저와 인지 유저는 Homogeneous Poisson Pont Process 형태로 분포되어 있고 통신을 하고 있는 수신자들과 일정한 거리로 떨어져있다. 위와 같은 네트워크 모델에서 주어진 여러 가지 조건하에 인지 유저 네트워크 처리량을 최대화할 수 있는 전송파워, 인지 유저 밀도 제안하고 앞으로의 연구방향을 제시한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.360.2-360.2
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• 2016

CuSn thin films were fabricated by rf magnetron co-sputtering method on the Si(100) substrate for evaluation of the antibacterial effect. The co-sputtering process was performed with different rf powers and sputtering times to regulate the thickness of the films and relative atomic ratio of Cu to Sn. The physicochemical properties of the CuSn thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), Optical microscope (OM), 4-point probe, and antibacterial test. An antibacterial test was conducted with Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) as changing contact times between CuSn fillms and bacteria suspension. We compared to the crystalline structures of films before sterilization and after sterilization by XRD measurement. The changes of oxidation states of Cu and Sn and the chemical environment of films before and after antibacterial test were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. After antibacterial test, the morphology of the films was checked with an OM images. The electrical properties of the CuSn films such as surface resistance and conductivity were measured by using 4-point probe.

• Journal of Advanced Marine Engineering and Technology
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• 제34권4호
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• pp.540-546
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• 2010

본 논문에서는 주기적 스트립구조(PSS)를 이용하여 실리콘 RFIC상에 집적 가능한 초소형 수동소자를 개발하였고, 주기적 스트립구조상의 Contact의 유/무에 따른 영향에 대한 선로파장 및 삽입손실에 대한 변화에 대하여 연구 하였다. 구체적으로는 실리콘 RFIC 반도체 기판상에 온칩 윌킨슨 전력분배기를 제작 평가하였다. 제작된 윌킨슨 전력분배기의 면적은 종래의 약 4.8 %인 $0.44{\times}0.1mm^2$이며, 25 ~ 50GHz의 범위에서 양호한 RF특성을 보여주었다.

• 한국응용과학기술학회지
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• 제16권1호
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• pp.105-115
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• 1999

P-type의 단결정 실리콘 위에 $1000{\AA}$의 열산화막을 성장시킨후 $5500{\AA}$의 다결정 실리콘으로 증착된 시료를 가지고 $HBr/Cl_2/He-O_2$ 혼합기체로 식각할 때 시료의 식각 특성에 관한 $H_2-O_2$ 기체함량. RF 전력, 압력에 대한 영향을 XPS(X-ray photoelectron Spectroscopy)와 SEM(Scanning Electron Microscopy)으로 조사하였다. $HBr/Cl_2/He-O_2$ 혼합기체로 식각되는 동안 형성된 다결정 실리콘 식각속도는 $H_2-O_2$ 함량 증가에 따라 증가하였으며 식각잔유물은 RF 전력과 압력변화에 의해 영향은 받지 않는 것으로 나타났으며, 다결정 실리콘 측벽에서의 증착속도는 낮은 RF전력과 높은 압력에서 높게 나타났다. 다결정 실리콘 식각 잔유물의 결합에너지는 안정한 $SiO_2$인 열산화막의 경우보다 높으므로 식각 잔유물은 $SiO_{\chi}({\chi}>2)$의 화합결합을 가지는 산화물과 같은 잔유물로 생각된다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권1호
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• pp.15-21
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• 2013

In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.15-16
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• 2008

In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.