• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.247-247
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• 2010

DLC(diamond-like carbon)는 비정질 고상 탄소의 하나로 다이아몬드의 유사한 높은 경도, 내마모성, 윤활성, 전기절연성, 화학적 안정성을 가지고 있는 재료이다. 이러한 우수한 특성 때문에 DLC는 박막의 형태로 여러 종류의 보호코팅에 많이 응용되고 있다. DLC의 광범위한 응용에 있어 가장 큰 문제점은 박막이 갖는 높은 잔류응력과 이에 따른 기판과의 낮은 접착성으로 알려져 있다. 최근 연구에 의하면, plasma pre-treatment를 통해 PTFE기판에 DLC박막의 adhesion strength를 증진 시킬 수 있다고 보고하였다. 또한 ion beam technique를 이용하여 잔류응력을 줄이고 기판과의 접착력을 높일 수 있다는 것도 보고 되었다. 이에 기인하여 pre-treatment가 DLC합성에 잔류응력을 낮추고 기판과의 접착성을 높이는 효과를 보일 것이라고 가정하고 연구하였다. 본 연구에서 pre-treatment가 Diamond-like Carbon의 stainless steel 합성시 stress와 adhesion에 어떤 효과가 있는지 알아보기 위해, pre-treatment시와 synthesis of DLC film시에 13.56MHz 150W RF플라즈마 화학기상 증착 (RF-PECVD) 법을 통해 합성되었다. pre-treatment시에 H2(80 sccm), O2(10 sccm), N2(20 sccm)의 가스 종류를 다르게 하였고, synthesis of DLC film시에는 CH4 (20 sccm), H2 (80 sccm)가스의 유량을 고정하였다. 합성된 DLC 박막은 Contact Angle Analyze, Raman spectroscopy, Scratch tester를 이용하여 접촉각, D peak Position, G peak Position, ID/IG ratio, 접착력을 측정하였다.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.185-190
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• 2003

Titanium dioxide films were prepared by RF sputtering method on glass for various oxygen partial pressures at power 270 W. The crystal structure, photocatalytic property and the hydrophilicity of $TiO_2$thin film the deposition conditions were investigated. Crystallized anatase phase was observed in $TiO_2$film deposited at the ratio of oxygen partial pressure 10% and 20% for 2 hrs. As the increase of deposition time, the grain size and void size of $TiO_2$film have increased and also $V_2$films have been good crystallinity. The ultraviolet-visible light absorption of $TiO_2$films was increased with increasing of deposition time and occured chiefly at the wavelength between 280 and 340 nm. The absorption band was shifted to a longer wave length as deposition time increased. Water contact angle on the X$TiO_2$film of anatase structure was decreased with increasing ultraviolet illumination time and became lower than $11^{\circ}$ from $83^{\circ}$. When hydrophilic $TiO_2$film changed by enough ultraviolet illumination was stored in the dark, the film surface gradually turned to hydrophobic state.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.9
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• pp.1323-1329
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• 2015

The WO₃/Ag/WO₃ transparent thin films are fabricated by the RF magnetron sputtering. This has a transmittance of front and rear about 90% in the visible light range and surface resistance of 6.41Ω/□. In this paper, we analyzed the surface characteristics caused by the working pressure and O₂ plasma surface treatment to apply a transparent electrode that was prepared to the laminated structure with other materials. The working pressure was changed in the WO₃ film to 10mTorr, 7mTorr, and 5mTorr, it showed a lower than roughness of conventional ITO. In addition, by 55.5774 J/m² at 5mTorr, it shows the hydrophobic property with lower process pressure. O₂ plasma surface treatment was changed at the condisions of the RF power to 150W, 100W, and 50W and the process time to 240s, 180s, 120s, and 60s. The surface roughness are the maximum roughness(Rmax) 6.437nm and the average roughness(Rq) 0.827nm at RF power 150W, and the maximum roughness (Rmax) 6.880nm and the average roughness (Rq) 0.839nm at process time 240sec. It showed a lower value than the surface treatment. also about working pressure and process time is increased, it showed the hydrophobic.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.48-56
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• 1989

Contact-type linear image sensors for facsimile have been fabricated by means of rf glow discharge decomposition method of silane. The dependence of their electrical and optical properties on rf power, $SiH_4$ flow rate, ambient gas pressure, $H_2SiH_4$ ratio and substrate temperature are described. The a-Si:H monolayer demonstriated photosensitivity of 0.85 and $I_{ph}/I_d$ ratio of 100 unger 100 lux illumination. However, this monolayer has relatively high dark current due to carrier injection from both electrodes, resulting in low $I_{ph}/I_{dd}$ ratio. To suppress the dark current we have fabricated $SiO_2/i-a-Si:H/p-a-Si:H:B$ multilayer film with blocking structure. The photocurrent of this multilayer sensor with 6 V bias became saturated ar about 20nA under 10 lux illumination, while the dark current was less than 0.2 nA. Moreover, the spectral sensitivity of the multilayer film was enhanced for short wavelength visible region, compared with that of the a-Si:H monolayer. These results show that the fabricated photocon-ductive film can be used as the linear image sensor of the facsimile.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

• Polymer(Korea)
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• v.36 no.2
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• pp.137-144
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• 2012

The surface of polyethylene (PE) was modified through Ar atmospheric pressure plasma treatment and subsequent grafting of glycidyl methacrylate (GMA). Optimum plasma treatment conditions were determined through analyzing the surface free energies calculated from the contact angles between PE samples and three probe liquids, which were RF-power of 200 W, plasma treatment time of 600 sec, Ar flow rate of 5 LPM, and sample-holder moving speed of 20 mm/sec. To introduce the maximum amount of GMA on PE surface treated under the conditions, graft copolymerization conditions such as GMA concentration, temperature, and time were carefully controlled. Grafting degree (GD) was obtained through weight difference analysis of PE film before and after graft copolymerization. A maximum GD was achieved at the GMA concentration of 20 vol%, the temperature of $80^{\circ}C$, and the treatment time of 4 hr.

• Journal of the Korea Computer Industry Society
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• v.3 no.3
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• pp.369-382
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• 2002

The increase of vehicles stagnations leads to the increasing attention to the way customers pay and a large number of Projects on electronic cash system. Tranport system is comprised of a number of advanced technologies, including information processing, communications, control, and electronics. Recently many research on a system which provides contact in order to protect driver's vehicle passage have been carried out. And some potential problems from that system are being reviewed by electronic cash system. In this papers, we suggest RF protocol developing technology using the concept of electronic cash. ATM electronic cash developing is consist of component of pre-developed coin throw, integration of component using its, and production of more requirement-satisfactory ITS solution. Result increase 15-40% pre-type vehicles stagnations. Especially, we expect this proposed concept would be well adapted to our national environments.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

• KSTLE International Journal
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• v.3 no.1
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• pp.38-42
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• 2002

Diamond-like Carbon(DLC) films were deposited on Si wafers by an RF-plasma-assisted CVD using CH$_4$gas. Tribological tests were conducted with the use of a rotating type ball on a disk friction tester with dry air. This study made use of four kinds of mating balls that were made with stainless steel but subjected to different annealing conditions in order to achieve different levels of hardness. In all load conditions, testing results demonstrated that the harder the mating materials, the lower the friction coefficient was. The friction coefficients were fecund to be lower with austenite mating balls than with fully annealed martensite balls. Conversely, the high friction coefficient found in soft martensite balls appeared to be caused by the larger contact area between the DLC film and the ball. The wear tracks on DLC films and mating balls could prove that effect. Measuring the wear track of both DLC films and mating balls revealed a similar tendency compared to the results of friction coefficients. The wear rate of austenite balls was also less than that of fully annealed martensite balls. Friction eoefficients decrease when applied leads exceed critical amount. The wear track on mating balls showed that a certain amount of material transfer occurs from the DLC film to the mating ball during a high friction process. Raman Spectra analysis Showed that the transferred materials were a kind of graphite and that the contact surface of the DLC film seemed to undergo a phase transition from carbon to graphite during the high friction process.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.185-189
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• 2005

We reported here nano-scale electrical phase-change recording in amorphous $Ge_2Sb_2Te_5$ media using an atomic force microscope (AFM) having conducting probes. In recording process, a pulse voltage is applied to the conductive probe that touches the media surface to change locally the electrical resistivity of a film. However, in contact operation, tip/media wear and contamination could major obstacles, which degraded SNR, reproducibility, and lifetime. In order to overcome tip/media wear and contamination in contact mode operation, we adopted the W incorporated diamond-like carbon (W-DLC) films as a protective layer. Optimized mutilayer media were prepared by a hybrid deposition system of PECVD and RF magnetron sputtering. When suitable electrical pulses were applied to media through the conducting probe, it was observed that data bits as small as 25 nm in diameter have been written and read with good reproducibility, which corresponds to a data density of $1 Tbit/inch^2$. We concluded that stable electrical phase-change recording was possible mainly due to W-DLC layer, which played a role not only capping layer but also resistive layer.