• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권8호
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.272.2-272.2
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• 2016

Copper-Tin (CuSn) thin films were synthsized by rf magnetron co-sputtering method with pure Cu and Sn metal targets with various rf powers and sputtering times. The obtained CuSn thin films were characterized by a surface profiler (alpha step), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), and contact angle measurement. The deposition rates were calculated by the thickness of CuSn thin films and sputtering times. We observed hexagonal Cu20Sn6 and cubic Cu39Sn11 phases from the films by XRD measurement. From the survey XPS spectra, the Cu and Sn main peaks were observed. Therefore, we could conclude CuSn thin films were successfully fabricated on the substrate in this study. The changes of oxidation states and chemical environment of the films were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. Surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG) using the contact angle measurement. The total SFE of CuSn thin films decreased as rf power on Cu target increased. The contribution to the total SFE of dispersive SFE was relatively superior to polar SFE.

• 한국통신학회논문지
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• 제35권11A호
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• pp.1091-1096
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• 2010

Stiction in microelectromechanical systems (MEMS) has been a major failure mechanism. Especially, in RF MEMS switches, moving parts often suffered in-use and release related stiction problems. Some materials and methods have been used to prevent this problem. Diamond-like carbon (DLC) has not only been used as a protective material owing to its good mechanical properties but also has been used as a hydrophobic material. Its properties could be controlled by post annealing treatment in various conditions. We synthesized DLC films using a radio frequency plasma enhanced chemical vapor deposition (RF PECVD) method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas. Then, the change of the hydrophobic property of the films was investigated undervarious annealing temperatures in nitrogen and in oxygen ambient. The films, that were annealed above $700^{\circ}C$ in nitrogen ambient, showed a high contact angle of water (> $90^{\circ}$) even though their mechanical property was sacrificed to some degree. The structural variation and the changes of the hydrophobic and mechanical properties of the DLC films were analyzed by Raman spectrum, contact angle measurement, surface profiler, and a nanoindentation test.

• 센서학회지
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• 제31권4호
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• pp.214-217
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• 2022

The effect of inductively coupled plasma (ICP) treatment with O₂ gas on the surface properties of poly(ether sulfone) (PES) was investigated. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical characteristics of the O₂ plasma-treated PES films. The surface roughness of the pristine and O₂ plasma-treated PES films for different RF powers of the ICP was determined using an atomic force microscope (AFM). The contact angles of the PES films were also measured, using which the surface free energies were calculated. The O1s XPS spectra of the PES films revealed that the number of polar functional groups increased following the O₂ plasma treatment. The AFM analysis showed the average surface roughness increased from 1.01 to 4.48 nm as the RF power of the ICP was increased. The contact angle measurements revealed that the PES films became more hydrophilic as the RF power of the ICP was increased. The total surface energy increased with the RF power of the ICP, resulting from the increased polar energy component.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.406-407
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.136.2-136.2
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• 2015

반도체 제조는 chip의 성능 향상 및 단가 하락을 위해 지속적으로 pattern size가 nano size로 감소해 왔고, capacitor 용량은 증가해 왔다. 이러한 현상은 contact hole의 aspect ratio를 지속적으로 증가시킨바, 그에 따라 최적의 HARC (high aspect ratio contact)을 확보하는 적합한 dry etch process가 필수적이다. 그러나 HARC dry etch process는 많은 critical plasma properties 에 의존하는 매우 복잡한 공정이다. 따라서, critical plasma properties를 적절히 조절하여 higher aspect ratio, higher etch selectivity, tighter critical dimension control, lower P2ID과 같은 plasma characteristics을 확보하는 것이 요구된다. 현재 critical plasma properties를 제어하기 위해 다양한 plasma etching 방법이 연구 되어왔다. 이 중 plasma를 낮은 kHz의 frequency에서 on/off 하는 pulsed plasma etching technique은 nanoscale semiconductor material의 etch 특성을 효과적으로 향상 시킬 수 있다. 따라서 본 실험에서는 dual-frequency capacitive coupled plasma (DF-CCP)을 사용하여 plasma operation 동안 duty ratio와 pulse frequency와 같은 pulse parameters를 적용하여 plasma의 특성을 각각 제어함으로써 etch selectivity와 uniformity를 향상 시키고자 하였다. Selective SiO2 contact etching을 위해 top electrode에는 60 MHz pulsed RF source power를, bottom electrode에는 2MHz pulse plasma를 인가하여 synchronously pulsed dual-frequency capacitive coupled plasma (DF-CCP)에서의 plasma 특성과 dual pulsed plasma의 sync. pulsing duty ratio의 영향에 따른 etching 특성 등을 연구 진행하였다. 또한 emissive probe를 통해 전자온도, OES를 통한 radical 분석으로 critical Plasma properties를 분석하였고 SEM을 통한 etch 특성분석과 XPS를 통한 표면분석도 함께 진행하였다. 그 결과 60%의 source duty percentage와 50%의 bias duty percentage에서 가장 향상된 etch 특성을 얻을 수 있었다.

• 한국정보통신학회논문지
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• 제16권5호
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• pp.1023-1028
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• 2012

본 논문에서는 비접촉 마이크로웨이브 프루브 시스템의 I/Q demodulator를 위한 MMIC (Monolithic Microwave Integrated Circuit) mixer chip을 GaAs p-HEMT 공정의 Schottky 다이오드를 이용하여 설계 및 제작하였다. 프루브 시스템의 I/Q demodulator 구조를 단순화하기 위해 single balanced 구조의 mixer를 채택하였다. Single balanced mixer에서 $90^{\circ}$hybrid coupler와 ${\lambda}/4$ 전송선로를 이용하여 $180^{\circ}$hybrid를 설계하였으며 이를 MIM 커패시터와 spiral 인덕터를 이용하여 구현함으로써 mixer chip의 크기를 줄일 수 있었다. On-wafer 측정 결과, 본 논문의 MMIC mixer는 1650MHz ~ 2050MHz의 RF 및 LO 주파수 대역을 포함하고 있으며, 응용 주파수 대역 내에서 RF 및 LO의 변화에 대해 약 12dB 이하의 평탄한 변환손실(conversion loss) 특성을 나타내었다. 또한, MMIC mixer chip은 $2.5mm{\times}1.7mm$의 초소형 크기를 가지며 LO-IF 및 RF-IF의 격리도는 각각 43dB 및 23dB 이상의 특성을 나타내었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.210-214
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• 2016

In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.

• 반도체디스플레이기술학회지
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• 제2권3호
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• pp.7-11
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• 2003

In this research, the etching characteristics of via contact and deep contact hole have been studied using multi-pole inductively coupled plasma(MICP) etching system. We investigated Plasma density of MICP source using the Langmuir probe and etching characteristics with RF frequency, wall temperature, chamber gap, and gas chemistry containing Carbon and Fluorine. As the etching time increases, formation of the polymer increases. To improve the polymer formation, we controlled the temperature of the reacting chamber, and we found that temperature of the chamber was very effective to decrease the polymer thickness. The deep contact etch profile and high selectivity(oxide to photoresist) have been achieved with the optimum mixed gas ratio containing C and F and the temperature control of the etching chamber.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1311-1312
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using 4he C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}{\cdot}cm^2$ of was obtained due to the improved interfacial adhesion.