• Applied Science and Convergence Technology
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• v.23 no.2
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• pp.90-96
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• 2014

Flexible $ZrO_2$ films as dielectric materials for high-energy-density capacitors were deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $ZrO_2$ films were dependent on the sputtering pressure and gas ratio. Although $ZrO_2$ films were deposited at room temperature, all films showed a tetragonal crystalline structure regardless of the sputtering variables. The surface of the film became a surface with large white particles upon an increase in the $O_2/Ar$ gas ratio. The RMS roughness and crystallite size of the $ZrO_2$ films increased with an increase in the sputtering pressure. The electrical properties of the $ZrO_2$ films were affected by the microstructure and roughness. The $ZrO_2$ films exhibited a dielectric constant of 21~38 at 1 kHz and a leakage current density of $10^{-6}{\sim}10^{-5}A/cm^2$ at 300 kV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.519-522
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• 2000

The correlation of surface morphology and magnetic property of NiFe thin films on Si(001) deposited by RF-magnetron sputter has been investigated, using AFM, XRD and MR measurements. During short field annealing for 15 min, there was no significant change in XRD patterns of NiFe thin films. However, the degree of surface roughness was changed with increasing annealing temperature. With variation of surface roughness, there was significant difference in MR characteristics of NiFe thin films. In the case of as-deposited NiFe thin films(T$\_$G/ = 150$^{\circ}C$) and UFA400 (T$\_$A/ = 400$^{\circ}C$) having smooth surface, good linearity of MR Curve was observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.246-250
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• 2000

Reactive radio frequency (RF)magnetron sputter has been used to deposit AlN thin film on a Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure and high $\textrm{N}_2$ concentration. Also it has been shown that properties of AlN thin film are affected by presputtering time. As presputtering time increased aluminum and nitride concentration of AlN thin film decreased. But oxygen concentration and grain size increased. The good preferred orientation was shown with the short presputtering time.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.330-337
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• 1996

A rf reactive sputter deposition technique was adopted to deposit ferroelectric lead zirconate titanate (PZT) thin films with high rate from a ZrTi alloy target combined with PbO pellets. Deposition characterisitics including the effects of PbO are ratio were discussed. A new deposition mode called the quasi-metallic mode was observed. Perovskite PZT films were prepared at a growth temperature as low as$ 450^{\circ}C$. However, because the target structure is unstable, weproposed a mixture target consisted of Zr, Ti and PbO. Fundamental experiments were investigated using the powder target. Perovskite PZT film could be obtained at $450^{\circ}C$ with better electrical properties also.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1311-1312
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using 4he C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}{\cdot}cm^2$ of was obtained due to the improved interfacial adhesion.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.98-100
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• 2004

In this study, PST thin films were etched with inductively coupled $Cl_2/(Cl_2+Ar)$ plasmas. The etch characteristics of PST thin films as a function of $Cl_2/(Cl_2+Ar)$ gasmixtures were analyzed by using quadrupole mass spectrometer (QMS). Systematic studies were carried out as a function of the etching parameters, including the RF power and the working pressure. The maximum PST film etch rate is 56.2 nm/min, because a small addition of $Cl_2$ to the $Cl_2$/Ar mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.406-407
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.125-126
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• 2006

ZnO Films have been prepared on polycarbonate (PC), polyethylene terephthalate (PET), and Coming 7059 substrates by r.f. magnetron sputtering technique. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the effect of the sputter power on the structural and optical properties of these films was evaluated.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.306-306
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• 2013

p-type Si(100)기판위에 Al2O3 박막을 증착하고 Si/SiO2 박막을 연속 증착하여 태양전지를 제작하였다. Si/SiO2 박막을 연속으로 증착하면 양자 구속이 일어나고 이로 인한 유효밴드 갭이 증가하게 되고, tunnel effect와 계면에서의 passivation 효과를 기대할 수 있다. 이런 효과들을 이용하여 고효율 태양전지를 기대 할 수 있다. 본 연구에서는 Remote Plasma Atomic Layer Deposition(RPALD)를 이용하여 Al2O3를 증착하였고 RF-Magnetron Sputter와 e-beam Evaporator 장비를 이용하여 Si/SiO2을 증착하였다. 전극으로는 Ti/Ag와 Al을 이용하였다. Solar simulator 장비를 이용하여 cell의 전기적 특성 평가를 평가하였고(Fig. 1) QE 측정장비를 통해 파장대의 따른 광학적 측정을 하였다(Fig. 2). ellipsometer 장비와 ${\alpha}$-step 장비로 박막과 전극의 두께를 측정하였고 4-point prove 장비를 이용하여 면저항, 저항율을 측정 평가하였다. 또한 I-V, C-V 측정 결과 터널링 현상이 일어나는 것을 확인 하였으며, Si/SiO2 다중 박막을 연속 증착 할수록 cell 효율이 더 좋게 나온다는 것을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.187-190
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• 2004

In this study, PST thin films were etched with inductively coupled $Cl_2/(Cl_2+Ar)$ plasmas. The etch characteristics of PST thin films as a function of $Cl_2/(Cl_2+Ar)$ gasmixtures were analyzed by using quadrupole mass spectrometer (QMS). Systematic studies were carried out as a function of the etching parameters, including the RF power and the working pressure. The maximum PST film etch rate is 56.2 nm/min, because a small addition of $Cl_2$ to the $Cl_2/Ar$ mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.