• Journal of electromagnetic engineering and science
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• v.18 no.3
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• pp.188-198
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• 2018

In this study, we propose an approach for the design and satisfy the requirements of the fabrication of a small, lightweight, reliable, and stable ultra-wideband receiver for millimeter-wave bands and the contents of the approach. In this paper, we designed and fabricated a stable receiver with having low noise figure, flat gain characteristics, and low noise characteristics, suitable for millimeter-wave bands. The method uses the chip-and-wire process for the assembly and operation of a bare MMIC device. In order to compensate for the mismatch between the components used in the receiver, an amplifier, mixer, multiplier, and filter suitable for wideband frequency characteristics were designed and applied to the receiver. To improve the low frequency and narrow bandwidth of existing products, mathematical modeling of the wideband receiver was performed and based on this spurious signals generated from complex local oscillation signals were designed so as not to affect the RF path. In the ultra-wideband receiver, the gain was between 22.2 dB and 28.5 dB at Band A (input frequency, 18-26 GHz) with a flatness of approximately 6.3 dB, while the gain was between 21.9 dB and 26.0 dB at Band B (input frequency, 26-40 GHz) with a flatness of approximately 4.1 dB. The measured value of the noise figure at Band A was 7.92 dB and the maximum value of noise figure, measured at Band B was 8.58 dB. The leakage signal of the local oscillator (LO) was -97.3 dBm and -90 dBm at the 33 GHz and 44 GHz path, respectively. Measurement was made at the 15 GHz IF output of band A (LO, 33 GHz) and the suppression characteristic obtained through the measurement was approximately 30 dBc.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.4
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• pp.629-635
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• 2009

The FSK duplex remote controlling wireless transmission units with a common local oscillator circuit for transmitter and receiver are designed and implemented in this paper. In the FSK full-duplex the channel frequency for Tx/Rx is allocated, a common switching oscillator circuit for Tx/Rx is designed in the FSK half-duplex scheme. Both of FSK units get functions of automatic channel detection for busy channels and channel configuration for an idle channel in order to reduce the RF channel interference and are designed as a remote controller with small-sized low power of 10mW and the 400MHz-colpitz type PLL configuration of 50kHz channel separation. The full-duplex Tx/Rx link frequency gets frequency difference of 42.8MHz, which is double of 21.4MHz IF frequency.

• Journal of Satellite, Information and Communications
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• v.5 no.1
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• pp.58-62
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• 2010

This paper presents the effects of RF performance parameters on the Galileo receiver design via simulation after reviewing the requirements of the Galileo receiver structure. At first, we considered the general requirements, structure and characteristics of the Galileo system. Then we designed the Galileo receiver focused on performance requirement of 16 dB C/N which is equal to 15 % Error Vector Magnitude(EVM) by using Advanced Design System(ADS) simulation program. In order to verify the function of Automatic Gain Control(AGC)), we measured the IF output power level by changing the input power level at the front - end of the receiver. We analyzed the performance degradation due to phase noise variations of Local Oscillator(LO) in the Galileo receiver through EVM when the minimum sensitivity level of -127 dBm is applied at the receiver. We also analyzed the performance degradation according to variable Analog-to-Digital Converter(ADC) bits within the Dynamic range, -92 ~ -139 dBm, which has been defined by gain range (-2.5 ~ +42.5 dB) in the AGC operation. The results clearly show that the performance of the Galileo receiver can be improved by increasing ADC bits and reducing Phase Noise of LO.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.2
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• pp.139-145
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• 2024

This paper presents the design of a voltage controlled oscillator (VCO) which is one of the key building blocks in modern wireless communication systems with small VCO gain (K_vco) variation. To compensate conventional large K_vco variation, a series varactor bank has been added to the conventional LC-tank with parallel capacitor bank array. And also, in order to achieve excellent phase noise performance while maintaining wide tuning range, a mixed coarse/fine tuning scheme(series varactor array and parallel capacitor array) is chosen. The switched varactor array bank is controlled by the same digital code for switched capacitor array without additional digital circuits. For use at a low voltage of 1.2V, the proposed current reference circuit in this paper used a current reference circuit for safety with the common gate removed more safely. Implemented in a TSMC 0.13㎛ CMOS RF technology, the proposed VCO can be tuned from 4.4GH to 5.3GHz with the K_vco (VCO gain ) variation of less than 9.6%. While consuming 3.1mA from a 1.2V supply, the VCO has -120dBc/Hz phase noise at 1MHz offset from the carrier of the 5.3 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.2
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• pp.111-116
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• 2003

In this paper, a CMOS baseband analog receiver for wireless home network is discussed. It is composed of a Gilbert type mixer, an Elliptic 6th order 1ow pass filter, and a 6-bit A/D converter. The main role of the mixer is generating a mixed analog signal between the 200MHz output signal of CMOS RF stage and the 199MHz local oscillator. After the undesired high frequency component of the mixed signal comes out. Finally, the analog signal is converted into digital code at the 6-bit A/D converter, The proposed receiver is fabricated with 0.25${\mu}{\textrm}{m}$ 1-poly 5-metal CMOS technology, and the chip area is 200${\mu}{\textrm}{m}$ X1400${\mu}{\textrm}{m}$. the receiver consumes 130㎽ at 2.5V power supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.737-743
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• 2004

A fixed-tuned SIS(Superconductor-Insulator-Superconductor) mixer across 120∼180 GHz band has been developed. This mixer employs an SIS chip fabricated by Nobeyama radio observatory which consists of a series array of 6 Nb/Al-Al$_2$O$_3$/Nb junctions in a microstrip line on a fused quartz substrate. The SIS chip is placed at the center of the half-height waveguide mixer mount to have a good incoming signal coupling over the whole frequency band. No mechanical tuner was used in the SIS mixer and the RF signal and local oscillator power are injected to the mixer via a cooled cross-guide coupler. In order to prevent the IF signal loss, the If output impedance of the SIS mixer was matched to the 50 $\Omega$ input impedance of the IF chain. Measured double sideband noise temperatures of a receiver using the SIS mixer are 32∼131 K over 120∼180 GHz band. The developed SIS mixer is now in use for radio astronomical observations on the TRAO 14 m radio telescope.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.379-388
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• 2007

This paper presents a real-time respiration and heartbeat detector comprised of a 1.6 GHz single-channel Doppler sensor and analog/digital signal processing block for remote vital sign detection. The RF front end of the Doppler sensor consists of an oscillator, mixer, low noise amplifier, branch-line hybrid and patch antenna. We apply artificial transmission lines(ATLs) to the branch-line hybrid, which leads to a size reduction of 40 % in the hybrid, while its performance is very comparable to that of a conventional hybrid. The analog signal conditioning block is implemented using second order Sallen-Key active filters and the digital signal processing block is realized with a LabVIEW program on a computer. The respiration and heartbeat detection is demonstrated at a distance of 50 cm using the developed system.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.11
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• pp.2391-2396
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• 2010

The power-controlled six-port element that can control the local oscillator signal power and receiving RF signal power was designed and implemented in this paper. The direct conversion six-port element configuration was proposed, which provides the constant six-port output power by controlling the six-port input power with various signal strength. The direct conversion six-port element protects the power detector element of six-port receiver from the saturation status and compensates the transmission performance degradation. For implementation of power-controlled six-port element, the power-controlled six-port element including the power controller was analyzed. The implemented power-controlled six-port element shows the power control capability of 36 dB and gain imbalance of about 1.6 dB, phase imbalance of about $4^{\circ}$ in the frequency range of 1.69 GHz. The measured results show the good performance as direct conversion front-end element.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.97-103
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• 2006

This paper presents the method of improving second order intermodulation distortion(IMD2) and dc-offset problems in down-conversion mixer. A simple analysis reveals the IMD2 and dc-offset can be eliminated by controlling the duty cycles of local oscillator(LO) inputs. A mixer with the proposed method has been simulated with a $0.13{\mu}m$ RF CMOS technology with 5% mismatch in the load resistance, the mixer shows 2.04dBm IIP2 and 22mnV input referred DC-offset. By controlling two duty cycles of LO inputs, IIP2 and DC-offset can be improved to 38.8dBm and $777{\mu}V$, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.45-54
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• 2014

In this paper, We have designed and fabricated 20 InP Gunn diodes using a current limiting epitaxial structure by MINT's optimized fabrication processes. We have also packaged the fabricated InP Gunn diodes using our optimized packaging method, and then designed and fabricated a W-band waveguide FTO to measure characteristics of the packaged InP Gunn diodes. The packaged InP Gunn diode have a ceramic ring, a Au plated stud and a lid, and a Maltese cross. The fabricated InP Gunn diodes have good RF characteristics such as high output powers (11.8~17 dBm) and limiting low currents (less than 400 mA) between 92.9 and 94.78 GHz.