• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.3
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• pp.277-283
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• 2016

In this paper, a system of self-interference signal cancelation for in-band full duplex has been implemented and tested in RF/analog region. The system performance has been evaluated with NI5791 platform and NI Flex RIO. Due to the low power level of the NI5791, the RF signal is amplified by SKYWORKS SE2565T power amplifier. A circulator is used to feed the antenna both the transmitter and receiver. The RF FIR filter is designed by twelve delay taps in two different groups, and the interval between each delay tap is designed to have 100 ps. The amplified signal is distributed to antenna and the FIR filter by use of a 10 dB directional coupler. The tap coefficients of the RF FIR filter are tuned to estimate the self-interference signal coming from antenna reflection and the leakage of the circulator, and the self-interference signal is subtracted. The system is test with 802.11a/g 20 MHz OFMD at 2.56 GHz, and the output power of the amplifier of 0 dBm. The self-interference signal is canceled out by 53 dB.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.47 no.5
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• pp.388-396
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• 2019

This paper describes the RF(Radio Frequency) interference on the GNSS receiver due to the S-band signals transmitted from the transmitters in the Test Launch Vehicle, and analyzes the cause of the RF interference. Due to the S-band signals that have relatively high power levels compared with GNSS signals, an LNA(Low Noise Amplifier) in the active GNSS antenna was saturated, and the intermodulation signal within GNSS in-bands was produced in the LNA whenever two S-band signals were received from the GNSS antenna. For these reasons, the C/N0 of the satellite signals in the GNSS receiver was attenuated severely. The design of the LNA was changed in order to protect the RF interference due to the S-band signals and the suppression capability of the RF interference was confirmed in the new LNA through the comparison of the old LNA.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.2
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• pp.85-89
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• 2011

In this paper, a novel Class-E power amplifier using metamaterials has been realized with one RF LDMOS diffusion metal-oxide-semiconductor field effect transistor. The CRLH structure can lead to metamaterial transmission line with the Class-E power amplifier tuning capability. The CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Also, the proposed power amplifier has been realized by using the CRLH structure in the output matching network for better efficiency. Operating frequencies are chosen at 13.56 MHz in this work. The measured results show that the output power of 39.83 dBm and the gain of 11.83dB was obtained. At this point, we have obtained the power-added efficiency (PAE) of 73 % at operation frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.3
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• pp.569-577
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• 1999

A wideband RF receiver for satellite mobile communications system was fabricated and evaluated of performance in low noise amplifier and high gain amplifier. The low noise amplifier used to the resistive decoupling and self-bias circuits. The low noise amplifier is fabricated with both the RF circuits and the self-bias circuits. Using a INA-03184, the high gain amplifier consists of matched amplifier type. The active bias circuitry can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilized resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 55 dB in gain, 50.83 dBc in a spurious level and less than 1.8 : 1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio is a 43.15 dB/Hz at a 1 KHz from 1537.5 MHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.665-667
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• 2010

In this paper, the method to detect the IM(Inter Modulation) components of power amplifier is proposed by using frequency down-convertor. Output signals of power amplifier which is coupled by 20dB coupler and divided by power divider are applied to RF and LO of the frequency converter. It could be found the magnitude of IM components of power amplifier as a converted DC voltage which is come from the difference between 3th and 5th IM component. The detected DC voltage values are changed from 0.72V to 0.9V when 3rd IM component level changed from -26.4dBm to +2.15dBm and 5th IM component level changed from -34.2dBm to -12.89dBm as the Vgs of 3W power amplifier is changed.

• ETRI Journal
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• v.34 no.6
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• pp.885-891
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• 2012

This paper proposes a high-efficiency power amplifier (PA) with uneven bias. The proposed amplifier consists of a driver amplifier, power stages of the main amplifier with class AB bias, and an auxiliary amplifier with class C bias. Unlike other CMOS PAs, the amplifier adopts a current-mode transformer-based combiner to reduce the output stage loss and size. As a result, the amplifier can improve the efficiency and reduce the quiescent current. The fully integrated CMOS PA is implemented using the commercial Taiwan Semiconductor Manufacturing Company 0.18-${\mu}m$ RF-CMOS process with a supply voltage of 3.3 V. The measured gain, $P_{1dB}$, and efficiency at $P_{1dB}$ are 29 dB, 28.1 dBm, and 37.9%, respectively. When the PA is tested with 54 Mbps of an 802.11g WLAN orthogonal frequency division multiplexing signal, a 25-dB error vector magnitude compliant output power of 22 dBm and a 21.5% efficiency can be obtained.

• Journal of Advanced Navigation Technology
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• v.9 no.2
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• pp.164-169
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• 2005

In this paper, the high efficiency Doherty power amplifier using adaptive bias technique has been designed and realized for 2.3GHz Wibro applications. The RF performances of the Doherty power amplifier using adaptive bias technique have been compared with those of a class AB amplifier alone, and conventional Doherty amplifier. The Maximum PAE of designed Doherty power amplifier with adaptive bias technique has been 36.6% at 34.0dBm output power. The proposed Doherty power amplifier showed an improvement 1dB at output power and 7.6% PAE than a class AB amplifier alone.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.59-63
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• 2014

Previous studies have selected wireless power transmission system using 2.45 GHz of ISM band, but the researches for 5.8 GHz microwave wireless power transmission have been relatively rare. The 5.8 GHz has some advantages compared with 2.45 GHz. Those are smaller antenna and smaller integrated system for RFIC. In this paper, the 5.8 GHz wireless power transmission system was developed and transmission efficiency was measured according to the distance. A transmitter sent the amplified microwaves through an antenna amplified by a power amplifier of 1W for 5.8 GHz, and a receiver was converted to DC from RF through a RF-DC Converter. In the 1W 5.8GHz wireless power transmission system, the converted currents and voltages were measured to evaluate transmission efficiency at each distance where LED lights up to 1m. The RF-DC Converter is designed and fabricated by impedance matching using full-wave rectifier circuit. The transmission-efficiency of the system shows from 1.05% at 0cm to 0.095% at 100cm by distance.

• Journal of IKEEE
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• v.27 no.1
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• pp.53-58
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• 2023

In this paper, a Radio Frequency (RF) transformer (TF) based on LTCC (Low Temperature Co-fired Ceramic) for the output stage of differential power amplifiers is presented. Instead of using an usual L-C matching circuit, a small-sized transformer was implemented on the LTCC board and the results were verified through simulation. For reduced size and better performance, a TF using more metal layers was implemented and compared with the existing TF through simulation. As a result of comparison, the proposed TF has an area reduced by 55% and a coupling coefficient increased by 25%, and insertion loss improvement of about 0.4dB at 5GHz was confirmed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.818-823
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• 2003

본 논문에서는 입력 매칭(input matching) BIST(Built-In Self-Test) 회로를 이용한 RF font end의 새로운 결함 검사방법을 제안한다. BIST 회로를 가진 RF front end는 1.8GHz LNA(Low Noise Amplifier: 저 잡음 증폭기)와 이중 대칭 구조의 Gilbert 셀 믹서로 구성되어 있으며, TSMC 0.25$\mu\textrm{m}$ CMOS 기술을 이용하여 설계되었다. catastrophic 결함 및 parametric 변동을 가진 RF front end와 결함을 갖지 않은 RF front end를 판별하기 위해 RF front end의 입력 전압 특성을 조사하였다. 본 방법에서는 DUT(Device Under Test: 검사대상이 되는 소자)와 BIST 회로가 동일한 칩 상에 설계되어 있기 때문에 측정할 때 단지 디지털 전자계와 고주파 전압 발생기만이 필요하며, 측정이 간단하고 비용이 저렴하다는 장점이 있다. BIST 회로가 차지하는 면적은 RF front end가 차지하는 전체면적의 약 10%에 불과하다. 본 논문에서 제안하는 검사기술을 이용하여 시뮬레이션해 본 결과 catastrophic 결함에 대해서는 100%, parametric 변동에 대해서는 약 79%의 결함을 검출할 수 있었다.