• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1049-1055
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• 2007

Lots of integration work has been done in order to miniaturize the devices for communication. To do this work, one of key work is to get miniaturized inductor with high Q factor for RF circuitry. However, it is not easy to get high Q inductor with silicon based substrate in the range of GHz. Although silicon is well known for its good electrical and mechanical characteristics, silicon has many losses due to small resistivity and high permittivity in the range of high frequency. MEMS technology is a key technology to fabricate miniaturized devices and LTCC is one of good substrate materials in the range of high frequency due to its characteristics of high resistivity and low permittivity. Therefore, we proposed and studied to fabricate and analyze the inductor on the LTCC substrate with MEMS fabrication technology as the one of solutions to overcome this problem. We succeeded in fabricating and characterizing the high Q inductor on the LTCC substrate and then compared and analyzed the results of this inductor with that on a silicon and a glass substrate. The inductor on the LTCC substrate has larger Q factor value and inductance value than that on a silicon and a glass substrate. The values of Q factor with the LTCC substrate are 12 at 3 GHz, 33 at 6 GHz, 51 at 7 GHz and the values of inductance is 1.8, 1.5, 0.6 nH in the range of 5 GHz on the silicon, glass, and LTCC substrate, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.6 s.360
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• pp.1-8
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• 2007

In wireless sensor network which uses limited battery, power consumption is very important factor for the survivality of the system. By using low-power communication to reduce power consumption, error rate is increased in typical conditions. This paper analyzes power consumption of specific error control coding (ECC) implementations. With identical link quality, ECC provides coding gain which save the power for transmission at the cost of computing power. In sensor node, transmit power is higher than computing power of Micro Controller Unit (MCU). In this paper, Viterbi algerian is applied to the low-transmit-power sensor networks in terms of network power consumption. Practically, Viterbi algorithm presents 20% of reduction of re-transmission in compared with Auto Repeat Request (ARQ) system. Furthermore, it is observed that network power consumption is decreased by almost 18%.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.615-620
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• 2020

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300℃ is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, V_th, and V_H of 6.45 ㎠/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

• Korean Journal of Weed Science
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• v.14 no.2
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• pp.156-162
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• 1994

To better understand the exact nature of the major toxic compound responsible for phytotoxicity of sorghum stem, the most toxic compound from the stem extract was isolated by rapid chromatography and subsequently purified by thin-layer chromatography(TLC) and high pressure liquid chromatography(HPLC). Of the eight fractions isolated by rapid chromatography, the fraction with solvent combinations of butanol (8) : acetic acid (1) : water (1) had the highest toxicity. Further separation of the fraction by TLC in a solvent mixture of butanol (24) : acetic acid (16.4) : water (7) : propanol (1) showed that the spot with an $R_f$ 0.71 had one major peak with retention time of 20.40 minutes. Upon subjecting gas chromatography and the HPLC fraction to the mass spectrometry, the toxic compound is probably one of the four compounds ; 1-methyl-1-(2-propynyl)-hydrazine, 1-aziridineethanol, 5-chloro-2-pentanone, and 2-(methylseleno)-ethanamine.

• Korean Journal of Materials Research
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• v.1 no.2
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• pp.93-98
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• 1991

The as-grown $YBa_2Cu_3O_{7-x}$ superconducting thin films on MgO(100) substrate have been prepared by a reactive coevaporation method. The superconducting transition temperature, surface morphology and crystalline quality were examined as a function of the substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$. From the reflection high energy electron diffraction (RHEED) analysis, it was found the film consisted of almost amorphous phase with a halo pattern deposited at the substrate temperature of $450^{\circ}C$. The film deposited at the substrate temperature of $510^{\circ}C$ consisted of polycrystalline phase, showing a broad ring pattern. On the other hand, for the film deposited at $590^{\circ}C$, RHEED showed spotty pattern indicating that this film consisted of single crystal phase. It has rough film surface due to the surface outgrowth. The surface outgrowth increased as the substrate temperature increased from $510^{\circ}C$ to $590^{\circ}C$. the surface outgrowth may be due to the anisotropic growth rate. The highest transition temperature obtained in this study was $Tc_{zero}$ of 83K with $Tc_{onset}$ of 88K for the film deposited at $590^{\circ}C$ using activated RF oxygen plasma.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.3A
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• pp.189-197
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• 2011

OFDM systems are much studied for the recent high speed wireless optical communication system. OFDM system has basically high PAPR and ICI easily generated because of non-linearity and RF impairments. In the wireless optical communication system, optical output power driven by current of LED is not linear so that transmission signals are distorted. Therefore, research about reception performance of this nonlinear optical output emitted by non-linear LED transfer function and OFDM signal has been conducted. Nonlinear effect of LED is different from nonlinear effect of OFDM system in the conventional radio communication system, which degrades the BER performance. In this paper, we apply non-linear transfer function of recently studied LED into OFDM system. So, for reducing the PAPR and suppressing the ICI in frequency domain of receiver, we suggest a new PAPR reduction technique to reduce non-linear distortion of LED and an adaptive ICI suppression algorithm so that BER performance may be improved. Also, the proposed method is verified through simulation results.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38C no.9
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• pp.813-821
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• 2013

In this paper, a vital signal sensor based on impedance variation of resonator is presented. Proposed vital signal sensor can detect the vital signal, such as respiration and heart-beat signal. System is composed of resonator, oscillator, surface acoustic wave (SAW) filter, and power detector. The cyclical movement of a dielectric such as a human body, causes the impedance variation of resonator within the near-field range. So oscillator's oscillation frequency variation is effected on resonator's resonant frequency. SAW filter's skirt characteristic of frequency response can be transformed a small amount of frequency deviation to a large variation. Aim to enhance the existing sensor detection range, proposed sensor operates in 870 MHz ISM band, and detect respiration and heart-beat signal at distance of 120 mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.563-568
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• 2007

In this paper, the proposed package antenna, which is meander line structure with short pin, is miniaturized to realize RF-SoP at 900 MHz RFID band. The RFID BGA(Ball Grid Array) chip is put in a cavity of LTCC Layers. The coupling and cross talk, which are happen between BGA chip and proposed package antenna, are reduced by faraday cage, which consists of ground and via fences, is realized to enhance the isolation between BGA chip and antenna. The proposed antenna structure is focused on the package level antenna realization at low frequency band. The novel proposed package antenna size is $13mm{\times}9mm{\times}3.51mm$. The measured resonance frequency is 0.893 GHz. The impedance bandwidth is 9 MHz. The maximum gain of radiation pattern is -2.36 dBi.