• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.16 no.3
• /
• pp.416-423
• /
• 2012

Using Ansoft HFSS(High Frequency Structure Simulator) and Serenade(circuit simulator), multilayer LPF and RF diode switch for GSM were designed. Diodes were transformed the inductor and capacitor in Tx and Rx for the simulation of equivalent circuit, respectively. In particular, the design of the simulation for multilayer RF diode switch was carried out with considering the variance of device and contraction percentage.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.45 no.11
• /
• pp.55-60
• /
• 2008

This paper proposed a dual-band RF switch using a Composite Right/Left Handed transmission line(CRLH TL) and PIN diode. RF switch is usually consist of $\lambda/4$ Right Handed transmission line(RH TL) and PIN diode. The dual band characteristics of RF switch was achieved by using CRLH transmission line instead of RH transmission line. CRLH Open-Stub was designed for resolve to reduction of isolation due to Package Inductance of PIN diode. The proposed RF switch was designed at GSM and DCS frequency-band. The measurement results showed a good agreement with theoretical result.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.4 s.119
• /
• pp.364-371
• /
• 2007

In this paper, the design and implementation of high-power PIN diode switch modules and high-speed switch driver circuits are presented for Wibro base stations. To prevent isolation degradation due to parasitic inductances of conventional packaged PIN diodes and to improve power handling capabilities of the switch modules, bare diode chips are used and carefully placed in a PCB layout, which makes bonding wire inductances to be absorbed in the impedance of a transmission line. The switch module is designed and implemented to have a maximum performance while using a minimum number of the diodes. It shows an insertion loss of ${\sim}0.84\;dB$ and isolation of 80 dB or more at 2.35 GHz. The switch driver circuit is also fabricated and measured to have a switching speed of ${\sim}200\;nsec$. The power handling capability test demonstrates that the module operates normally even under a digitally modulated 70 W RF signal stress.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.23 no.7
• /
• pp.791-796
• /
• 2012

A RF limiter is a component to protect the receiver front end from undesired signal. A RF limiter is a key component whose output is constant level for all inputs above a critical value. A RF limiter use a diode to pass signals of low power while attenuating those above some threshold. A RF limiter for receiver protection in modern radar systems is playing a vital role in order to meet challenges of new interference threats and complicated electromagnetic environments. This paper proposed a new circuit for high power RF limiter whose structure is the combination of the PIN diode and Limit diode. PIN diode take a use of its isolation characteristics which act as a switch does. A 2 kW RF limiter with 200 us pulse width at S-band was developed. It shows good agreements between estimated value and measured results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.19 no.11
• /
• pp.1287-1293
• /
• 2008

Antenna switch module(ASM) for quad-band was developed. This module was integrated by RFIPD(RF integrated passive device) and transistor switch instead of LTCC-type device using low pass filters, diodes and passive elements in RF front end module for cellular phone. This module leads to low cost and miniaturization(The area is $5{\times}5\;mm$ and the thickness is 0.8 mm). The insertion loss and the return loss of each band were averagely measured as 1.0 dB(insertion loss), 15.1 dB(GSM/EGSM return loss) and 19 dB(DCS/PCS return loss), respectively.

• Proceedings of the Korean Institute of Communication Sciences Conference
• /
• 2006.07a
• /
• pp.577-577
• /
• 2006

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.23 no.10
• /
• pp.1137-1144
• /
• 2012

In this paper, a 2.6 GHz switched parasitic array(SPA) antenna is designed to resolve the device interference in the femtocell. The designed SPA antenna structure consists of a central ${\lambda}/4$ monopole antenna as a radiator and surrounding four parasitic elements operating as a reflector or a director depending on the switching state. In addition, open state monopoles around the parasitic elements are placed to improve the directivity. The designed antenna utilizes RF FETs as switching elements instead of conventional PIN diodes, which enables beam steering with a simple structure consuming low power. To select the proper FET switch, the performance of the SPA antenna depending on the switch characteristics is analyzed. The fabricated antenna has 65 mm radius and 35 mm height, which shows about 15 dB front-back-ratio(FBR) at 2.6 GHz and enables eight-directional beam steering.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.9
• /
• pp.1633-1640
• /
• 2016

In this paper, we propose a open-ended rectangular microstirp patch antenna with fork-shaped feeding structure. This antenna extends the effective bandwidth by transforming single or multi resonant frequency and is designed planar monopole structure with microstrip line to satisfy the WLAN bands (2.4 - 2.484, 5.15 - 5.35, 5.25-5.825 GHz). The substrate is printed in 0.8 mm thickness on an FR-4 board. A commercial 3D simulation tool was used to analyze surface current and electromagnetic field distribution in order to analyze the operation mode and reconfiguration principle of antenna. According to the lengths of individual patches, simulated reflection loss was compared to obtain optimized values. When it was designed with the optimized values, it satisfied WLAN bands (2.380 - 2.710, 4.900 - 5.950 GHz), if the switch is off, and 2.4 WLAN band (2.380 - 2.710 GHz). From the fabricated and measured results, measured results of return loss, gain and radiation patterns characteristics displayed for operating bands.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.23 no.12
• /
• pp.1337-1342
• /
• 2012

In this paper, we propose a novel reconfigurable antenna that can change the electrical shape of the matching network using RF switches of PIN diodes. The designed antenna operates at two different modes that are Mode 1 (HSDPA band, 2.1~2.2 GHz) and Mode 2(WiBro WiFi band, 2.3~2.5 GHz). The antenna is built on both sides of a polyarcylate substrate. The measured reflection coefficient shows a matching bandwidth of 547 MHz($S_{11}$ <-3 dB, 2.035~2.582 GHz) for Mode 1 and 600 MHz($S_{11}$ <-3 dB, 2.2~2.8 GHz) for Mode 2, and it shows average vertical gains of -4.4 dBi and -4.5 dBi in x-y plane, respectively.